Photomicrosensor (Transmissive) EE-SX1041 Be sure to read Precautions on page 25. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * General-purpose model with a 5-mm-wide slot. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. 0.2 max. 140.2 5 +0.2 -0.1 0.2 max. Absolute Maximum Ratings (Ta = 25C) 60.2 0.50.1 0.2 Emitter 2.2 Optical axis 10 0 -0.2 7.50.2 2.5 5 min. Detector Two, 0.7 0.1 Four, 0.25 (9) Four, 0.5 5.20.1 K C (Two, 2.54) A 2.350.1 Two, 0.70.1 dia. E 6.60.1 Internal Circuit Symbol Forward current IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 95C Storage Tstg -30C to 100C Tsol 260C (see note 3) Soldering temperature K C Unless otherwise specified, the tolerances are as shown below. A E Terminal No. A K C E Ambient temperature Item Name Anode Cathode Collector Emitter Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Detector 34 EE-SX1041 Photomicrosensor (Transmissive) Engineering Data IF = 30 mA IF = 20 mA IF = 10 mA Relative light current IL (%) Light current IL (mA) IF = 40 mA Light current IL (mA) Ta = 25C Ta = 70C Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Ambient temperature Ta (C) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = -30C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25C IF = 50 mA Ta = 25C VCE = 10 V Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Dark current ID (nA) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 80 Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Relative light current IL (%) Response time tr, tf (s) Relative light current IL (%) 120 VCC = 5 V Ta = 25C -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1041 Photomicrosensor (Transmissive) 35