SPP02N60C3 SPB02N60C3 Preliminary data Cool MOSTM==Power Transistor COOLMOS Power Semiconductors Feature *=New revolutionary high voltage technology Product Summary * Worldwide best R DS(on) in TO 220 * Ultra low gate charge VDS @ Tjmax *=Periodic avalanche rated ID 650 RDS(on) * Extreme dv/dt rated P-TO263-3-2 3 1.8 V m A P-TO220-3-1 *=Ultra low effective capacitances *=Improved noise immunity *=150 C operating temperature Type Package Ordering Code Marking SPP02N60C3 P-TO220-3-1 Q67040-S4392 02N60C3 SPB02N60C3 P-TO263-3-2 Q67040-S4393 02N60C3 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 C 1.8 TC = 100 C 1.1 Pulsed drain current, tp limited by Tjmax ID puls 5.4 Avalanche energy, single pulse EAS 50 EAR 0.07 Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 Reverse diode dv/dt dv/dt 6 Gate source voltage static VGS 20 Gate source voltage dynamic VGS 30 Power dissipation, TC = 25C Ptot 25 W Operating and storage temperature Tj , Tstg -55... +150 C mJ ID =0.9A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax 1) ID =1.8A, VDD =50V A V/ns IS =1.8A, VDS <=VDD , di/dt=100A/s, Tjmax=150C Page 1 V 2001-06-18 SPP02N60C3 SPB02N60C3 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - Linear derating factor - - 0.2 W/K - - 260 C V Soldering temperature, Tsold K/W 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj = 25 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V(BR)DSS 600 - - V(BR)DS - 700 - VGS(th) 2.1 3 3.9 VGS =0V, ID =0.25mA Drain-source avalanche breakdown voltage VGS =0V, ID =0.25A Gate threshold voltage, VGS = VDS ID = 80 A Zero gate voltage drain current A IDSS VDS = 600 V, VGS = 0 V, Tj = 25 C - 0.5 1 VDS = 600 V, VGS = 0 V, Tj = 150 C - - 50 - - 100 Gate-source leakage current IGSS nA VGS =20V, VDS=0V Drain-source on-state resistance RDS(on) m VGS =10V, ID=1.1A, Tj =25C - 2.7 3 VGS =10V, ID=1.1A, Tj =150C - 6 6.7 - 9 - Gate input resistance RG f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-06-18 SPP02N60C3 SPB02N60C3 Preliminary data Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 1.75 - S pF Characteristics Transconductance g fs V DS2*I D*R DS(on)max , ID=1.1A Input capacitance Ciss V GS=0V, V DS=25V, - 200 - Output capacitance Coss f=1MHz - 90 - Reverse transfer capacitance Crss - 4 - - 8.1 - - 15.7 - Effective output capacitance, 1) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 2) Co(tr) time related Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 8 - Rise time tr ID=1.8A, RG=50 - 5 - Turn-off delay time t d(off) - 45 70 Fall time tf - 20 30 - 1.6 - - 3.8 - - 9.5 12.5 - 5.5 - pF ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =420V, ID =1.8A VDD =420V, ID =1.8A, nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =420V, ID =1.8A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2001-06-18 SPP02N60C3 SPB02N60C3 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - - 1.8 - - 5.4 Characteristics Inverse diode continuous IS TC=25C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD V GS=0V, I F=IS - 1 1.2 V Reverse recovery time trr V R=420V, I F=I S , - 200 350 ns Reverse recovery charge Qrr diF/dt=100A/s - 1.3 - C Peak reverse recovery current Irrm - 9 - A Peak rate of fall of reverse dirr /dt - - 200 A/s recovery current Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.101 Rth2 Cth1 0.00003158 0.207 Cth2 0.0001104 Rth3 0.311 Cth3 0.0002001 Rth4 0.583 Cth4 0.0004898 Rth5 0.501 Cth5 0.00274 Rth6 0.135 Cth6 0.035 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2001-06-18 SPP02N60C3 SPB02N60C3 Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) parameter: VGS 10 V SPP02N60C3 1.9 28 W SPP02N60C3 A 24 1.6 22 1.4 18 ID Ptot 20 1.2 16 1 14 12 0.8 10 0.6 8 6 0.4 4 0.2 2 0 0 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 TC 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC =25C parameter : D = tp /T 10 1 1 SPP02N60C3 SPP02N60C3 K/W tp = 6.5s A 160 TC 3 Safe operating area 10 C 10 s V DS ( on ) = 10 0 ID Z thJC DS /I D 10 0 R 100 s 10 -1 D = 0.50 10 1 ms 10 -2 0.20 -1 0.10 10 1 10 2 V 0.02 10 -3 DC 10 -2 0 10 0.05 single pulse 10 ms 0.01 10 3 VDS 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 5 2001-06-18 SPP02N60C3 SPB02N60C3 Preliminary data 5 Typ. output characteristic 6 Typ. output characteristic ID = f (VDS ); Tj=25C ID = f (VDS ); Tj=150C parameter: tp = 10 s, VGS parameter: tp = 10 s, VGS 3 5.5 V20 V10 V7 V6.5 A 4.5 A 2.4 4 V6 6V 2.1 ID ID 20V 8V 7V 6.5V 3.5 1.8 5.5V 3 V5.5 1.5 2.5 1.2 5V 2 0.9 V5 1.5 4.5V 0.6 1 V4.5 4V 0.3 0.5 V4 0 0 2 4 6 8 10 12 14 16 0 0 VDS 20 V 5 10 15 VDS 7 Typ. drain-source on resistance 8 Drain-source on-state resistance RDS(on) =f(ID ) RDS(on) = f (Tj ) parameter: Tj =150C, VGS parameter : ID = 1.1 A, VGS = 10 V 20 4.5V 14 5,5V 14 12 6V 10 4 2 0 12 10 8 6 8 6 SPP02N60C3 5V RDS(on) 16 R DS(on) 17 4V 25 V 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 98% 4 6.5V 7V 8V 20V typ 2 A ID 3 0 -60 -20 20 60 100 C 180 Tj Page 6 2001-06-18 SPP02N60C3 SPB02N60C3 Preliminary data 9 Typ. transfer characteristics 10 Gate threshold voltage ID= f ( VGS ); VDS 2 x ID x RDS(on)max VGS(th) = f (Tj) parameter: tp = 10 s parameter: VGS = VDS , ID = 80 A 5 5.5 A V 25C 4.5 V GS(th) 4 ID max. 4 3.5 3.5 typ. 3 150C 3 2.5 min. 2.5 2 2 1.5 1.5 1 1 0.5 0.5 0 0 2 4 6 8 10 12 14 16 0 -60 V 20 VGS -20 20 60 100 C 160 Tj 11 Typ. gate charge 12 Forward characteristics of body diode VGS = f (QGate ) IF = f (VSD ) parameter: ID = 1.8 A pulsed parameter: Tj , tp = 10 s 16 10 1 SPP02N60C3 V SPP02N60C3 A 0,2 VDS max 10 10 0 0,8 VDS max IF V GS 12 8 6 10 -1 Tj = 25 C typ 4 Tj = 150 C typ Tj = 25 C (98%) 2 0 0 Tj = 150 C (98%) 2 4 6 8 10 12 nC 15 QGate 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 7 2001-06-18 SPP02N60C3 SPB02N60C3 Preliminary data 13 Avalanche SOA 14 Avalanche energy IAR = f (tAR ) EAS = f (Tj ) par.: Tj 150 C par.: ID = 0.9 A, VDD = 50 V 50 1.8 A mJ 1.2 EAS IAR 1.4 Tjstart=25C 1 30 0.8 20 0.6 Tjstart=125C 0.4 10 0.2 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 s 10 tAR 0 20 4 40 60 80 100 120 C 160 Tj 15 Drain-source breakdown voltage 16 Avalanche power losses V(BR)DSS = f (Tj ) PAR = f (f ) parameter: EAR =0.07mJ SPP02N60C3 70 720 W 680 50 P AR V (BR)DSS V 660 40 640 620 30 600 20 580 10 560 540 -60 -20 20 60 100 C 180 Tj Page 8 0 4 10 10 5 MHz f 10 2001-06-18 6 SPP02N60C3 SPB02N60C3 Preliminary data 17 Typ. capacitances 18 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS ) parameter: VGS =0V, f=1 MHz 10 4 1.8 pF J 1.4 E oss 10 3 C Ciss 1.2 1 10 2 0.8 0.6 Coss 10 1 0.4 Crss 10 0 0 100 0.2 200 300 400 V 600 VDS 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Page 9 2001-06-18 SPP02N60C3 SPB02N60C3 Preliminary data P-TO220-3-1 P-TO220-3-1 dimensions [mm] symbol [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M N 2.54 typ. 4.30 4.50 0.1 typ. 0.1693 0.1772 P T 1.17 2.30 0.0461 0.0906 1.40 2.72 0.0551 0.1071 TO-263 (DPak/P-TO220SMD) dimensions symbol A [inch] min max min max 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.65 0.85 0.1 typ. 0.0256 0.0335 5.08 typ. 4.30 4.50 0.2 typ. 0.1693 0.1772 F G H Page 10 [mm] K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N P 15 typ. 0.00 0.20 0.5906 typ. 0.0000 0.0079 Q 4.20 0.1654 R S 8 max 2.40 3.00 8 max 0.0945 0.1181 T 0.40 0.0157 5.20 0.60 0.2047 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y Z 9.40 0.3701 16.15 0.6358 2001-06-18 Preliminary data SPP02N60C3 SPB02N60C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2001-06-18