2001-06-18
Page 1
SPP02N60C3
SPB02N60C3
Preliminary data
Cool MOS™=
==
=Power Transistor
C
Power Semiconducto rs
OO LMOS
Feature
•=New revolutionary high voltage technology
• Worldwide best RDS
(
on
)
in TO 220
• Ultra low gate charge
•=Periodic avalanche rated
• Extreme dv/dt rated
•=Ultra low effective capacitances
•=Improved noise immunity
•=150 °C operating temperature
Product Summary
VDS @ T
j
max 650 V
RDS
(
on
)
3 mΩ
ID1.8 A
P-TO220-3-1P-TO263-3-2
Type Package Ordering Code
SPP02N60C3 P-TO220-3-1 Q67040-S4392
SPB02N60C3 P-TO263-3-2 Q67040-S4393
Marking
02N60C3
02N60C3
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
1.8
1.1
A
Pulsed drain current, t
p
limited by T
j
max ID
p
uls 5.4
Avalanche energy, single pulse
ID=0.9A, VDD=50V
EAS 50 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=1.8A, VDD=50V
EAR 0.07
Avalanche current, repetitive t
A
R limited by T
j
max I
A
R1.8 A
Reverse diode dv/dt
IS=1.8A, VDS <=VDD, di/dt=100A/µs, Tjmax=150°C
dv/dt6V/ns
Gate source voltage static VGS ±20 V
Gate source voltage dynamic VGS ±30
Power dissipation, TC = 25°C Pto
t
25 W
Operating and storage temperature T
j
, Tst
g
-55... +150 °C
2001-06-18
Page 2
SPP02N60C3
SPB02N60C3
Preliminary data
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 5 K/W
Thermal resistance, junction - ambient, leaded RthJ
- - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
-
-
-
35
62
-
Linear derating factor - - 0.2 W/K
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=0.25mA
V(BR)DSS 600 - - V
Drain-source avalanche breakdown voltage
VGS=0V, ID=0.25A
V(BR)DS - 700 -
Gate threshold voltage, VGS = VDS
ID = 80 µA
VGS(th) 2.1 3 3.9
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
VDS = 600 V, VGS = 0 V, Tj = 150 °C
IDSS
-
-
0.5
-
1
50
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS - - 100 nA
Drain-source on-state resistance
VGS=10V, ID=1.1A, Tj=25°C
VGS=10V, ID=1.1A, Tj=150°C
RDS(on)
-
-
2.7
6
3
6.7
mΩ
Gate input resistance
f = 1 MHz, open drain RG- 9 - Ω
1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2001-06-18
Page 3
SPP02N60C3
SPB02N60C3
Preliminary data
Electrical Characteristics , at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max ,
ID=1.1A
- 1.75 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 200 - pF
Output capacitance Coss - 90 -
Reverse transfer capacitance Crss - 4 -
Effective output capacitance,1)
energy related Co(er) VGS=0V,
VDS=0V to 480V
- 8.1 - pF
Effective output capacitance,2)
time related Co(tr) - 15.7 -
Turn-on delay time td
(
on
)
VDD=350V, VGS=0/10V,
ID=1.8A, RG=50Ω
- 8 - ns
Rise time tr- 5 -
Turn-off delay time td
(
off
)
- 45 70
Fall time t
f
- 20 30
Gate Charge Characteristics
Gate to source charge Q
g
sVDD=420V, ID=1.8A - 1.6 - nC
Gate to drain charge Q
g
d- 3.8 -
Gate charge total QgVDD=420V, ID=1.8A,
VGS=0 to 10V
- 9.5 12.5
Gate plateau voltage V
(
plateau
)
VDD=420V, ID=1.8A - 5.5 - V
1Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2001-06-18
Page 4
SPP02N60C3
SPB02N60C3
Preliminary data
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Inverse diode continuous
forward current ISTC=25°C - - 1.8 A
Inverse diode direct current,
pulsed ISM - - 5.4
Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V
Reverse recovery time trr VR=420V, IF=IS ,
diF/dt=100A/µs
- 200 350 ns
Reverse recovery charge Qrr - 1.3 - µC
Peak reverse recovery current Irrm - 9 - A
Peak rate of fall of reverse
recovery current dirr/dt - - 200 A/µs
Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
Rth1 0.101 K/W
Rth2 0.207
Rth3 0.311
Rth4 0.583
Rth5 0.501
Rth6 0.135
Thermal capacitance
Cth1 0.00003158 Ws/K
Cth2 0.0001104
Cth3 0.0002001
Cth4 0.0004898
Cth5 0.00274
Cth6 0.035
External Heatsink
Tj Tcase
Tamb
Cth1 Cth2
Rth1 Rth,n
Cth,n
Ptot (t)
2001-06-18
Page 5
SPP02N60C3
SPB02N60C3
Preliminary data
1 Power dissipation
Ptot = f (TC)
0 20 40 60 80 100 120 °C 160
TC
0
2
4
6
8
10
12
14
16
18
20
22
24
W
28 SPP02N60C3
Ptot
2 Drain current
ID = f (TC)
parameter: VGS≥ 10 V
0 20 40 60 80 100 120 °C 160
TC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
A
1.9 SPP02N60C3
ID
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 0 10 1 10 2 10 3
VVDS
-2
10
-1
10
0
10
1
10
A
SPP02N60C3
ID
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
100 µs
10 µs
tp = 6.5µs
4 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPP02N60C3
ZthJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2001-06-18
Page 6
SPP02N60C3
SPB02N60C3
Preliminary data
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
0 2 4 6 8 10 12 14 16 VDS 20
V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
A
5.5
ID
V4.5
V4
V5
V5.5
V6
V20
V10
V7
V6.5
6 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
0 5 10 15 V 25
VDS
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
A
3
ID
4V
4.5V
5V
5.5V
6V
20V
8V
7V
6.5V
8 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 1.1 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
2
4
6
8
10
12
14
Ω
17 SPP02N60C3
RDS(on)
typ
98%
7 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 A 3
ID
2
4
6
8
10
12
14
16
Ω
20
RDS(on)
4V 4.5V 5V
5,5V
6V
6.5V
7V
8V
20V
2001-06-18
Page 7
SPP02N60C3
SPB02N60C3
Preliminary data
9 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0 2 4 6 8 10 12 14 16 V 20
VGS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
A
5.5
ID
25°C
150°C
10 Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = 80 µA
-60 -20 20 60 100 °C 160
Tj
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
VGS(th)
min.
max.
typ.
11 Typ. gate charge
VGS = f (QGate)
parameter: ID = 1.8 A pulsed
0 2 4 6 8 10 12 nC 15
QGate
0
2
4
6
8
10
12
V
16 SPP02N60C3
VGS
0,8 VDS max
DS max
V
0,2
12 Forward characteristics of body diode
IF = f (VSD)
parameter: T
j
, tp = 10 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-2
10
-1
10
0
10
1
10
A
SPP02N60C3
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2001-06-18
Page 8
SPP02N60C3
SPB02N60C3
Preliminary data
13 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4
µs
tAR
0
0.2
0.4
0.6
0.8
1
1.2
1.4
A
1.8
IAR
Tjstart=25°C
Tjstart=125°C
14 Avalanche energy
EAS = f (Tj)
par.: ID = 0.9 A, VDD = 50 V
20 40 60 80 100 120 °C 160
Tj
0
10
20
30
mJ
50
EAS
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60 -20 20 60 100 °C 180
Tj
540
560
580
600
620
640
660
680
V
720 SPP02N60C3
V(BR)DSS
16 Avalanche power losses
PAR = f (f )
parameter: EAR=0.07mJ
10 4 10 5 10 6
MHz
f
0
10
20
30
40
50
W
70
PAR
2001-06-18
Page 9
SPP02N60C3
SPB02N60C3
Preliminary data
17 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
0 100 200 300 400 V 600
VDS
0
10
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
18 Typ. Coss stored energy
Eoss=f(VDS)
0 100 200 300 400 V 600
VDS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
µJ
1.8
Eoss
Definition of diodes switching characteristics
2001-06-18
Page 10
SPP02N60C3
SPB02N60C3
Preliminary data
P-TO220-3-1
symbol [mm] [inch]
minmaxminmax
A 9.70 10.30 0.3819 0.4055
B 14.88 15.95 0.5858 0.6280
C 0.65 0.86 0.0256 0.0339
D 3.55 3.89 0.1398 0.1531
E 2.60 3.00 0.1024 0.1181
F 6.00 6.80 0.2362 0.2677
G 13.00 14.00 0.5118 0.5512
H 4.35 4.75 0.1713 0.1870
K 0.38 0.65 0.0150 0.0256
L 0.95 1.32 0.0374 0.0520
M
N 4.30 4.50 0.1693 0.1772
P 1.17 1.40 0.0461 0.0551
T 2.30 2.72 0.0906 0.1071
2.54 t y p. 0.1 t y p.
dimensions
P-TO220-3-1
TO - 263 (D²Pak/P - T O2 2 0 S M D)
symbol [mm] [inch]
min max min max
A 9.80 10.20 0.3858 0.4016
B 0.70 1.30 0.0276 0.0512
C 1.00 1.60 0.0394 0.0630
D 1.03 1.07 0.0406 0.0421
E
F 0.65 0.85 0.0256 0.0335
G
H 4.30 4.50 0.1693 0.1772
K 1.17 1.37 0.0461 0.0539
L 9.05 9.45 0.3563 0.3720
M 2.30 2.50 0.0906 0.0984
N
P 0.00 0.20 0.0000 0.0079
Q 4.20 5.20 0.1654 0.2047
R
S 2.40 3.00 0.0945 0.1181
T 0.40 0.60 0.0157 0.0236
U
V
W
X
Y
Z0.3701
0.6358
0.1811
2.54 typ.
5.08 typ.
4.60
9.40
16.15
15 typ.
6.23
1.15
10.80
8° max
dimensions
0.4252
0.0453
0.2453
0.1 typ.
0.2 typ.
0.5906 typ.
8° max
2001-06-18
Page 11
SPP02N60C3
SPB02N60C3
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
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or system Life support devices or systems are intended to be implanted in the human body, or to support
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of the user or other persons may be endangered.