(7 0 ) E 2SB1570 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Symbol ICBO 2SB1570 Unit -100max A 24.40.2 VEB=-5V -100max A -150min V hFE VCE=-4V, IC=-7A 5000min VCE(sat) IC=-7A, IB=-7mA -2.5max V W VBE(sat) IC=-7A, IB=-7mA -3.0max V 150 C fT VCE=-12V, IE=2A 50typ MHz -55 to +150 C COB VCB=-10V, f=1MHz 230typ pF IC -12 A IB -1 A PC 150(Tc=25C) Tj 2-o3.20.1 9 7 V V(BR)CEO a b 2 3 hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.450.1 Typical Switching Characteristics (Common Emitter) RL () IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (s) tstg (s) tf (s) -70 10 -7 -10 5 -7 7 0.8typ 3.0typ 1.2typ -1.2m A -1.0 mA -0.8m A -0.6mA -4 I B =-0.4mA -2 0 0 -2 -4 -10 -2 -10A -7A I C =-5A -1 0 -0.2 -6 h FE - I C Characteristics (Typical) -0.5 -1 -5 -10 h FE - I C Temperature Characteristics (Typical) (V C E =-4V) Typ 10,000 5,000 -5 -10-12 Transient Thermal Resistance D C Cur r ent Gai n h F E 125C D C Cur r ent Gai n h F E 0 25C 10000 -30C 5000 1000 800 -0.2 -0.5 Collector Current I C (A) -1 -5 1 0.5 0.1 1 -10 -12 5 -10 P c - T a Derating 10 10 0m s ite he 80 at si nk Without Heatsink Natural Cooling fin -0.5 120 In DC m s -1 40 -0.1 1 Emitter Current I E (A) 48 5 10 -0.05 -3 500 1000 160 -5 20 100 ith 40 0.5 50 W Typ 0.05 0.1 10 Time t(ms) M aximu m Power Dissip ation P C (W) 80 Collecto r Cur rent I C (A) 100 -2.5 j-a - t Characteristics Safe Operating Area (Single Pulse) -30 -2 2 (V C E =-12V) 0 0.02 -1 Collector Current I C (A) f T - I E Characteristics (Typical) Cut- off F re quen cy f T (MH Z ) 0 Base-Emittor Voltage V B E (V) 50000 60 -4 -50 -100 -200 (V C E =-4V) -1 -6 Base Current I B (mA) 40,000 -0.5 -8 -2 Collector-Emitter Voltage V C E (V) 1,000 -0.2 (V C E =-4V) mp) Collector Current I C (A) -1.5 mA -6 -12 e Te -2 .0m A -10 -8 -3 (Cas -2 .0 m A 125C A I C - V BE Temperature Characteristics (Typical) Collector Current I C (A) m E Weight : Approx 18.4g a. Type No. b. Lot No. j- a ( C/W) 0 -1 C V CE ( sat ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) -12 3.0 +0.3 -0.1 5.450.1 B VCC (V) I C - V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 mp) Temp ) IEBO 2.1 e Te V -5 21.40.3 -150 VEBO 6.00.2 36.40.3 IC=-30mA VCEO Tstg Conditions VCB=-160V (Case V External Dimensions MT-200 (Ta=25C) -30C Unit -160 Electrical Characteristics (Cas 2SB1570 VCBO C Application : Audio, Series Regulator and General Purpose 25C Symbol Equivalent circuit 4.0max Absolute maximum ratings (Ta=25C) 20.0min Darlington B -5 -10 -50 -100 Collector-Emitter Voltage V C E (V) -200 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(C) 150 2000