48
∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
–2
–4
–6
–12
–10
–8
–2 –4 –6
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–10mA
–2.0mA
–2.0mA
–1.5mA
–1.0mA
–1.2mA
–0.8mA
–0.6mA
I
B
=–0.4mA
0
–3
–2
–1
–0.2
–1–0.5 –10–5 –200–100–50
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
–7A
–10A
IC=–5A
0
–12
–10
–8
–6
–2
–4
0 –2.5–2–1
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
1,000
10,000
40,000
5,000
–0.2 –0.5 –1 –5 –10–12
Collector Current IC(A)
DC Current Gain hFE
(VCE=–4V)
Typ
(VCE=–4V)
–0.2 –1–0.5 –5 –12–10
800
1000
5000
10000
50000
Collector Current IC(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
1 5 10 50 100 5001000 2000
Time t(ms)
0.1
1
2
0.5
Transient Thermal Resistance θj-a(˚C/W)
0.02 0.10.05 0.5 1 5 10
0
40
60
20
100
80
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
Typ
Without Heatsink
Natural Cooling
10ms
–10 –50–5–3 –100 –200
–0.05
–0.1
–1
–0.5
–10
–30
–5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
DC
100ms
160
120
80
40
5
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
Safe Operating Area (Single Pulse)
θj-a–t Characteristics
fT–IE Characteristics
(Typical)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SB1570
–160
–150
–5
–12
–1
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1570
–100max
–100max
–150min
5000min∗
–2.5max
–3.0max
50typ
230typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
VCB=–160V
VEB=–5V
IC=–30mA
VCE=–4V, IC=–7A
IC=–7A, IB=–7mA
IC=–7A, IB=–7mA
VCE=–12V, IE=2A
VCB=–10V, f=1MHz
Darlington 2SB1570
(Ta=25°C) (Ta=25°C)
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
–70
RL
(Ω)
10
IC
(A)
–7
VBB2
(V)
5
IB2
(mA)
7
ton
(
µ
s)
0.8typ
tstg
(
µ
s)
3.0typ
tf
(
µ
s)
1.2typ
IB1
(mA)
–7
VBB1
(V)
–10
External Dimensions MT-200
2
3
1.05
+0.2
-0.1
BE
5.45±0.1 5.45±0.1
2-ø3.2±0.1
36.4±0.3
9
24.4±0.2
7
21.4±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0±0.2
2.1
a
b
C
Weight : Approx 18.4g
a. Type No.
b. Lot No.
B
E
C
(70Ω)
Equivalent circuit
