KE C SEMICONDUCTOR KTN2222S/AS KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES + Low Leakage Current DIM MILLIMETERS + 9340. : Torx=10nA(Max.) 3 Vor=60V, Vinorn=3V. ; aus) 016 * Low Saturation Voltage c 1.30 MAX > Verisay=0.3V(Max.) 5 Ic=150mA, In=15mA. eee * Complementary to the KTN2907S/2907AS. G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 P p L 0.55 - ar M 0.20 MIN | N 1.00+0.20/-0.10 o| = I P v MAXIMUM RATINGS (Ta=25C) pt AiR od et LF RATING CHARACTERISTIC SYMBOL UNIT KTN2222S | KT N2222AS 1. EMITTER 2. BASE Collector-Base Voltage Veo 60 75 Vv 3. COLLECTOR Collector-Emitter Voltage Vero 30 40 Vv SOT23 Emitter-Base Voltage Vio 5 6 Vv Collector Current Ic 600 mA Collector Power Dissipation or (Ta-25) Pe # 350 mW Junction Temperature Tj 150 Cc Storage Temperature Range Tstz 5o~ 150 Cc Note : Pc* : Package Mounted on 99.5% alumina 108 < 0.6mm. Marking Type_Name A Lot No. A Lot No. 7B Type Name | G : OH 6 4H 6 Lied Lid I L4toL-d rm rr ro rq MARK SPEC TYPE MARK KTN22228 Z B KTN2222AS ZG 1999. 5. 4 Revision No : 2 KEC 1/5 KTN2222S/AS ELECTRICAL CHARACTERISTICS (Ta=25'C ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current KTN2222AS crx Vcr=60V, Veniorm=3V - - 10 nA KTN22225 Vcp=50V, Ip=0 - - 0.01 Collector Cut-off Current Tczo LA KTN2222AS Vcn=60V, Ip=0 - - 0.01 Emitter Cut-off Current KTN2222A5 Tego Vip=3V, Ic=0 - - 10 nA Collector-Base| KINe225 60 - - Vascso | Ic=l0uA, In=0 Vv Breakdown Voltage KTN2222A4S 75 _ _ . Thani x KTN22225 30 - - Collector-Emitter ; Vaswevo | Inl0mA, 13-0 Vv Breakdown Voltage KTN2222A4S AQ _ _ Emitter-Base KTN22225 5 Z Z Voaweno | Ip=louA, Ic=0 V Breakdown Voltage KTN2222AS G _ _ herr) Ic=0.1mA, Vcr=l0V 35 7 _ KTN2222S hrr(2) Ic=lmA, Vcr=loV 50 _ _ KTN2222A5 | hee(3) | Ie=10mA, Ver=10V | - - DC Current Gain hrr(4) Tc=150mA, Vcr=10V 100 - 300 KTN22225 20 - - hrr(5) T=500mA, Voer=loV KTN2222AS AO - _ KTN2222S - - 0.4 Verisayl Ic=150mA, Ip=l5mA Collector-Emitter KTN2222A5 ~ ~ 0.3 Vv Saturation Voltage KTN2222S _ _ 16 Verisav2 | Ic=b00mA, Ip=50mA KTN2222AS - - 1 KTN2222S - - 13 Vortsatl Ic=150mA, Ip=l5mA Base-Emitter x KTN2222AS 0.6 - 1.2 y Saturation Voltage KTN2222S _ _ 26 Varsav2 | Ic=b00mA, Ipn=50mA KTN2222AS - - 2.0 KTN2222S = _ 250 - - Transition Frequency fr Te 20mA, Vcr=20V, MHz KTN2222AS f=100MHz 300 - - Collector Output Capacitance Cob Vep-1l0V, Ip-0, f=1.0MHz - - 8 pF KTN2222S - - 30 Input Capacitance Cp Ven=0.5V, Ic=0, f=1.0MHz pF KTN2222AS - - 25 Note : *Pulse Test : Pulse Width <300uS, Duty Cycle<2.0% 1999. 5. 4 Revision No : 2 KEC 2/5 KTN2222S/AS ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Ic=lmA, Vcr=10V, f=1lkHz 2 _ 8 Input Impedance KTN2222A5 hie kQ Tc=10mA, Ver=10V, f=1kHz 0.25 - 1.25 Ic=lmA, Vcr=10V, f=1lkHz _ _ 8 powage Feedback KTN2222AS re x10" ane Ic=10mA, Veu=10V, f=1kHz - - 4 Small-Singal Tc=lmA, Ver=10V, f=1kHz 50 - 300 mat oinga KTN2222AS he Current Gain _ Tc=10mA, Ver=10V, f=1kHz 7D - 375 C 1 O Ic=lmA, Vcr=10V, f=1lkHz 5 _ 35 Anette KTN2222AS Noe uD Tc=10mA, Ver=10V, f=1kHz 25 - 200 Collector-Base 5 4 , . : , KTN2222AS Cerrbb Te=20mA, Vcrn=20V, =31.8MHz - - 150 ps Time Constant . . . Tc=100HA, Vecr=10V, _ _ Noise Figure KTN2222AS NF Re=1k@, f=1kHz 4 dB Delay Ti - - 10 may aime a Vec=30V, Varorr=0.5V Rise Time t, Tc=150mA, Ip=l5mA _ _ 25 Switching Time ns Storage Time tste Vece=30V, Ic=150mA - - 225 Fall Time te TarvTaor Tom - - | 60 1999. 5. 4 Revision No : 2 KEC 3/5 KTN2222S/AS Ic Vee hre Ic qi 1000 1K A COMMON EMITTER oa Ta=25C a 800 = 500 ad 300 es a & 600 3 ee E 100 400 a 50 iz & > oO 30 F 200 4 A 10 0 0.4 0.8 1.2 1.6 1.8 0.5 1 3 10 30 100 300 1K COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR CURRENT Ic (mA) VcK(sat) Ic VBx(sat) Ic Zz = 0.6 COMMON EMITTER z 16 I/Ip=10 a FS B= 1A BS Ta=25C ES a 5 1.2 un rt 0.4 E e 2 a 1.0 & & ES ge o8 Ta Y 2g Be A Rey OF =o VCE(sat} FS 0.2 OF Lhe ae . 4 0 LI ~ 0 S 0.5 1 3 10 30 100 300 ik 0.5 1 3 10 30 100 300 1k COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT Ic (mA) Ic Vue fr - I 500 1000 = 300 = A c ~ 100 4 o > Ll oO 5 30 Z 10 5 100 5 & oO 30 Z 5} = a o 4 0.3 2 10 3 4 -1 -3 -10 -20-100 -300 -1k -3k o 0.1 e 0.05 COLLECTOR CURRENT Ic (mA) 0.2 03 04 05 06 0.7 0.8 0.9 1.0 BASE-EMITTER VOLTAGE Vopr (V) 1999. 5. 4 Revision No : 2 KEC 4/5 KTN2222S/AS 100 ow So oo o Lo = _ COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR INPUT CAPACITANCE Cib (pF) So Cob - Vp Cib - Vgp MMON =1MHz, Ta=25C -1.0 -10 -100 -300 COLLECTOR-BASE VOLTAGE Vcg (V) EMITTER-BASE VOLTAGE Vgg (V) Pc - Ta Po 100 COLLECTOR POWER pISSIPATION (mW 0 20 50 75 (1) MOUNTED ON 99.5% ALUMINA 10x8x0.6mm (2) Ta=25C 100 125 150 175 AMBIENT TEMPERATURE Ta (C) 1999. 5. 4 Revision No : 2 KEC