Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR03AM
APPLICATION
Leakage protector, timer, gas ignitor
✽1. With gate to cathode resistance RGK=1kΩ.
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=47°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Ratings
0.47
0.3
20
1.6
0.5
0.1
6
6
0.3
–40 ~ +110
–40 ~ +125
0.23
•IT (AV) ........................................................................0.3A
•V
DRM ..............................................................400V/600V
•I
GT .........................................................................100µA
Symbol
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
DC off-state voltage ✽1
Voltage class Unit
V
V
V
V
V
V
MAXIMUM RATINGS
8
400
500
320
400
500
320
12
600
800
480
600
800
480
TYPE
NAME
VOLTAGE
CLASS
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
φ5.0 MAX
4.4
5.0 MAX
12.5 MIN
3.9 MAX
1.3
1.25 1.25
CIRCUMSCRIBE
CIRCLE
φ0.7
132
OUTLINE DRAWING Dimensions
in mm
JEDEC : TO-92
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
IRRM
IDRM
VTM
VGT
VGD
IGT
IH
Rth (j-a)
Test conditions
Tj=110°C, VRRM applied
Tj=110°C, VDRM applied, RGK=1kΩ
Ta=25°C, ITM=4A, instantaneous value
Tj=25°C, VD=6V, IT=0.1A ✽3
Tj=110°C, VD=1/2VDRM, RGK=1kΩ
Tj=25°C, VD=6V, IT=0.1A ✽3
Tj=25°C, VD=12V, RGK=1kΩ
Junction to ambient
Unit
mA
mA
V
V
V
µA
mA
°C/W
Typ.
—
—
—
—
—
—
1.5
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
—
—
—
—
0.2
1
—
—
Max.
0.1
0.1
1.8
0.8
—
100✽2
3
180
✽2.If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
B
20 ~ 50
C
40 ~ 100
Item
IGT (µA)
A
1 ~ 30
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
3V
DC
I
GS
I
GT
6V
DC
60Ω
V
GT
21
TUT
1kΩ
R
GK
A3 A2 V1
A1
SWITCH 1 : I
GT
measurement
SWITCH 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1kΩ)
✽3. I
GT
, V
GT
measurement circuit.
SWITCH
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
T
a
= 25°C
10
0
23 5710
1
8
4
23 5710
2
44
12
16
20
6
2
10
14
18
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
102
10–2 100101
101
7
5
3
2
10–1
7
5
3
2
100
7
5
3
2
7
5
3
2
57 23 57
10
–1
102
23 57 23 5 23 57
VFGM = 6V
VGT = 0.8V
(Tj = 25°C)
IGT = 100µA
(Tj = 25°C)
PGM = 0.5W
PG(AV) = 0.1W
VGD = 0.2V IFGM = 0.3A
2310–3 5710
–2 23 5710
–1 23 5710
0
200
0
80
100
120
140
160
180
40
60
20
231005710
123 5710
223 5710
3
60–20–40 0 20 40 80 100
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100120
TYPICAL EXAMPLE
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0
–60–40–20 20 80 140120
0.2
0.5
0.9
06040 100
160
120
60
40
20
140
100
80
000.2 0.40.1 0.3 0.5
θ = 30°
60° 120°
90° 180°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
0.3
0.2
0.1
0.4
00.50.40 0.1 0.2 0.3
0.5
θ = 30°60°
120°
90°
180°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE (V)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (°C/W)
TIME (s)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER CURRENT (T
j
=t°C)
GATE TRIGGER CURRENT (T
j
=25°C)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
DISTRIBUTION
IGT (25°C) = 35µA
TYPICAL EXAMPLE
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
160
120
60
40
20
140
100
80
0120–40 04080–20 20 60 100
R
GK
= 1kΩTYPICAL EXAMPLE
2310
–1
5710
0
23 5710
1
23 5710
2
160
0
80
100
120
140
40
60
20
T
j
= 110°CTYPICAL EXAMPLE
0.3
0.2
0.1
0.5
0.4
000.2 0.40.1 0.3 0.5
θ = 30°
60° 120°
90°
180°
θ θ
360°
RESISTIVE LOADS
0.3
0.2
0.1
0.5
0.4
000.2 0.40.1 0.3 0.5
θ = 30° 60°90°
180° 270°
DC
120°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
160
120
60
40
20
140
100
80
00.50 0.2 0.40.1 0.3
θ
360°
θ = 30°
120°
180°
DC
270°
60° 90°
NATURAL
CONVECTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
60
40
20
140
100
80
000.2 0.40.1 0.3 0.5
60° 120° 180°θ = 30° 90°
θ θ
360°
RESISTIVE LOADS
NATURAL
CONVECTION
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AMBIENT TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (kΩ)
100 (%)
BREAKOVER VOLTAGE (R
GK
= rkΩ)
BREAKOVER VOLTAGE (R
GK
= 1kΩ)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25 °C)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
2310
0
5710
1
23 5710
2
23 5710
3
200
180
0
80
100
120
160
140
40
60
20
T
j
= 25°C
R
GK
= 1kΩ
T
j
= 110°C
10
2
23410
0
5710
1
2435710
2
10
4
10
3
7
5
4
3
2
7
5
4
3
2
2310
–2
10
–1
57 2 3 5710
0
235710
1
0
100
200
300
400
500 160
120
60
40
20
140
100
80
0120–40 04080–20 20 60 100
TYPICAL EXAMPLE
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
60–20–40–60 0 20 40 80 100120140
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
R
GK
= 1kΩ
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
HOLDING CURRENT (mA)
GATE TO CATHODE RESISTANCE (kΩ)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE TRIGGER CURRENT (µA)
GATE TRIGGER PULSE WIDTH (µs)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = vV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
=t°C)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
=25°C)
DISTRIBUTION
I
GT
(25°C) = 35µA
TYPICAL EXAMPLE
V
D
= 12V, T
j
= 25°C
# 2
# 1
TYPICAL EXAMPLE
I
GT
(25°C) I
H
(1kΩ)
# 1 10µA 1.0mA
# 2 26µA 1.1mA
T
j
= 25°C
TYPICAL EXAMPLE
I
GT
(DC)
# 1 16µA
# 2 65µA
# 1 # 2