V
RRM
= 400 V - 600 V
I
F
= 70 A
Features
• High Surge Capability DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol MUR7040 (R) Unit
Repetitive peak reverse
voltage V
RRM
400 V
RMS reverse voltage V
RMS
280 V
MUR7040 thru MUR7060R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
2. Reverse polarity (R): Stud is anode.
Silicon Super Fast
Recover
y
Diode
MUR7060 (R)
600
420
• Types from 400 V to 600 V V
RRM
DC blocking voltage V
DC
400 V
Continuous forward current I
F
70 A
Operating temperature T
j
-55 to 150 °C
Storage temperature T
stg
-55 to 150 °C
Parameter Symbol MUR7040 (R) Unit
Diode forward voltage 1.3
25 μA
3mA
Recovery Time
Maximum reverse recovery
time T
RR
75 ns
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 50 V, T
j
= 125 °C
V
3
90
A
V
R
= 50 V, T
j
= 25 °C
I
F
= 70 A, T
j
= 25 °C
T
C
≤ 125 °C
Conditions
1000
T
C
= 25 °C, t
p
= 8.3 ms
25
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
Reverse current I
R
V
F
70
1000
-55 to 150
-55 to 150
1.7
MUR7060 (R)
600
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MUR7040 thru MUR7060R
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Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MUR7040 thru MUR7060R
DO- 5 (DO-203AB)
J
K
G
F
A
E
D
P
N
B
C
M
Inches Millimeters
Min Max Min Max
A 1/4 –28 UNF
B 0.669 0.687 17.19 17.44
C ----- 0.794 ----- 20.16
D ----- 1.020 ----- 25.91
E 0.422 0.453 10.72 11.50
F 0.115 0.200 2.93 5.08
G ----- 0.460 ----- 11.68
J ----- 0.280 ----- 7.00
K 0.236 ----- 6.00 -----
M ----- 0.589 ----- 14.96
N ----- 0.063 ----- 1.60
P 0.140 0.175 3.56 4.45
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