APTGT150SK120G
APTGT150SK120G – Rev 1 July, 2006
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Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 220
IC Continuous Collector Current TC = 80°C 150
ICM Pulsed Collector Current TC = 25°C 350
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 690 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 300A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q1
G1
0/ VB US
OUT
E1
CR2
VBUS
VBUS OUT
0/VBUS
E1
G1
VCES = 1200V
IC = 150A @ Tc = 80°C
Applicatio
n
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching freque ncy up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Buck chopper
Fast Trench + Field Stop IGBT®
Power Module
APTGT150SK120G
APTGT150SK120G – Rev 1 July, 2006
www.microsemi
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 350 µA
Tj = 25°C 1.7 2.1
VCE(sat) Collector Emitter Saturation Voltage VGE = 15V
IC = 150A Tj = 125°C 2.0 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 3 mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 10.7
Coes Output Capacitance 0.56
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 0.48
nF
Td(on) Tur n-o n Delay Ti me 280
Tr Rise Time 40
Td(off) Turn-off Delay Time 420
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2Ω 75
ns
Td(on) Tur n-o n Delay Ti me 290
Tr Rise Time 45
Td(off) Turn-off Delay Time 520
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2Ω 90
ns
Eon Tur n-on Switchi ng Energy Tj = 125°C 14
Eoff Turn-off Switching Energy
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2Ω Tj = 125°C 16
mJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 600 µA
IF DC Forward Current Tc = 80°C 150 A
Tj = 25°C 1.6 2.1
VF Diode Forward Voltage IF = 150A Tj = 125°C 1.6 V
Tj = 25°C 170
trr Reverse Recovery Time Tj = 125°C 280 ns
Tj = 25°C 14
Qrr Reverse Recovery Charge Tj = 125°C 28 µC
Tj = 25°C 6
Er Reverse Recovery Energy
IF = 150A
VR = 600V
di/dt =2500A/µs
Tj = 125°C 11 mJ
APTGT150SK120G
APTGT150SK120G – Rev 1 July, 2006
www.microsemi
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.18
RthJC Junction to Case Thermal Resistance Diode 0.30
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 280 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTGT150SK120G
APTGT150SK120G – Rev 1 July, 2006
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Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
01234
VCE (V)
IC (A)
Output Characteristics
VGE=15V
VGE=13V
VGE=17V
VGE=9V
0
50
100
150
200
250
300
01234
VCE (V)
IC (A)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=125°C
0
50
100
150
200
250
300
56789101112
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eoff
Er
0
4
8
12
16
20
24
28
32
0 50 100 150 200 250 300
IC (A)
E (mJ)
VCE = 600V
VGE = 15V
RG = 2.2Ω
TJ = 125°C
Eon
Eon
Eoff
Er
2
6
10
14
18
22
26
30
34
024681012141618
Gate Resistance (ohms)
E (mJ)
VCE = 600V
VGE =15V
IC = 150A
TJ = 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
50
100
150
200
250
300
350
0 400 800 1200 1600
VCE (V)
IC (A)
VGE=15V
TJ=125°C
RG=2.2Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.04
0.08
0.12
0.16
0.2
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
APTGT150SK120G
APTGT150SK120G – Rev 1 July, 2006
www.microsemi
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Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=125°C
0
50
100
150
200
250
300
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
IF (A)
Hard
switching
ZCS
ZVS
0
10
20
30
40
50
60
0 40 80 120 160 200 240
IC (A)
Fmax, Operating Frequency (kHz)
VCE=600V
D=50%
RG=2.2Ω
TJ=125°C
Tc=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
M icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the spe cificatio ns and i nfo rmatio n co nta ine d he rein
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