IRF432,433 SOMMER? MOS [FE 4.0 AMPERES 500, 450 VOLTS RDS(ON) = 2.09 FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. N-CHANNEL This design has been optimized to give superior performance in most switching applications including: switching power = " s supplies, inverters, converters and solenoid/relay drivers. CASE STYLE TO-204AA (TO-3) Also, the extended safe operating area with good linear DIMENSIONS ARE IN INCHES AND (MILLIMETERS) transfer characteristics makes it well suited for many linear sesrses FOMaK | pe .888(0.08) MAX applications such as audio amplifiers and servo motors. vax yA Features 7 _) SEATING PLANE * 9.043,1,00) c a a . ase 0,043(1,09) ; .426(10,82) MIN. e Polysilicon gate Improved stability and reliability comoa Abe e No secondary breakdown Excellent ruggedness aX nore ,850(16. e Ultra-fast switching Independent of temperature CAST TEMP, REFERENCE POINT Voltage controlled High transconductance + 1,187 (30.40) 1.177(28.80) Low input capacitance Reduced drive requirement za00)- 17319806) e Excellent thermal stability Ease of paralleling eerese pars je QazsibaL OFAN 0.18(3.84) 2 HOLES 0.440(11.18) 0.420(10.87) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF432 IRF433 UNITS Drain-Source Voltage Voss 500 450 Volts Drain-Gate Voltage, Ras = 1MO, VpGR 500 450 Volts Continuous Drain Current g To= 26C Ip 4.0 4.0 A To = 100C 2.5 25 A Pulsed Drain Current) lpm 16 16 A Gate-Source Voltage Vas +20 20 Volts Total Power Dissipation @ To = 26C Pp 75 75 Watts Derate Above 25C 0.6 0.6 w/?C Operating and Storage Junction Temperature Range Ty, Tsta ~55 to 150 -55 to 160 S thermal characteristics Thermal Resistance, Junction to Case Rec 1.67 1.67 C/AN Thermal Resistance, Junction to Ambient Rasa 30 30 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 163 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC |symBpo. | MIN | TYP | MAX {| UNIT | off characteristics Drain-Source Breakdown Voltage IRF432 BVpss 500 _ _ Voits (Ves = OV, Ip = 250 uA) IRF433 450 _ Zero Gate Voltage Drain Current loss (Vps = Max Rating, Ves = OV, To = 25C) _ _ 250 LA (Vpg = Max Rating, 0.8, Vgg = OV, To = 125C) 1000 Oven Soy Current lass _ _ +100 nA on characteristics Gate Threshold Voltage To = 25C | VasctH) 2.0 _ 4.0 Volts (Vps = Vas, Ip = 250 uA) On-State Drain Current | 4.0 _ _ A (Vgs = 10V, Vps = 10V) D(ON) : Static Drain-Source On-State Resistance _ (Vag = 10V, Ip = 2.5A) Rps(on) 1.5 2.0 Ohms Forward Transconductance _ (Vpg = 10V, Ip = 2.5A) Ofs 1.75 2.2 mhos dynamic characteristics input Capacitance Ves = OV Ciss _ 650 800 pF Output Capacitance Vps = 25V Coss _ 90 200 pF Reverse Transfer Capacitance = 1 MHz Crss _ 15 60 pF switching characteristics* Turn-on Delay Time Vos = 225V ta(on) _ 15 _ ns Rise Time Ip = 2.5A, Vas = 15V tr _ 10 ~ ns Turn-off Delay Time RoeEn = 500, Res = 12.50 ta(off) _ 40 _ ns Fall Time (Res (Equiv.) = 100) tt _ 25 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 4.0 A Pulsed Source Current Isom _ _ 16 A Diode Forward Voltage Vv _ 1.0 13 Volts (To = 25C, Vag = OV, Is = 4.0A) sD Reverse Recovery Time ter _ 460 _ ns (Ig = 4.5A, di,/dt = 100A/yusec, To = 125C) Qrar _ 4.5 pc Pulse Test: Pulse width <= 300 ys, duty cycle = 2% 100 80 60 40 20 a wa x Y 410 = 8 = 6 Ee 2 4 ua & > 2 6 z a 1.0 = 08 OPERATION IN THIS AREA 3 06 Y BE LIMITED BY Rogigny 0.4 LE PULSE 02 Te= 25C I t 1 2 4 6 810 20 40 60 80100 200 400 600 1000 Vpg- ORAIN~SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 0.1 164 2.4 2.2 2.0 1.8 16 1.4 1.2 1.0 08 0.6 Rosion) AND Vggiq4) NORMALIZED 0.4 0.2 0 40 Rps(on) Vv, 0 T,, JUNCTION TEMPERATURE (C} CONDITIONS: CONDITIONS: Ip = 2.5 A, Vgg = 10V CONDITIONS: Ip = 25024, Vig = Vag 40 80 120 160 TYPICAL NORMALIZED Roygion; AND Vesitn) VS. TEMP.