New Product
U(F,B)10BCT thru U(F,B)10DCT
Vishay General Semiconductor
Document Number: 88967
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Ultrafast Rectifier
FEATURES
Oxide planar chip junction
Ultrafast recovery time
Soft recovery characteristics
Low switching losses, high efficiency
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB, IT-220AB)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB and TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 5 A x 2
VRRM 100 V, 150 V, 200 V
IFSM 55 A
trr 25 ns
VF0.89 V
TJ max. 150 °C
TO-220AB
U10xCT 1
23
UB10xCT
1
2
K
TO-263AB
UF10xCT
ITO-220AB
123
CASE
PIN 2
PIN 1
PIN 3
PIN 1
PIN 2
K
HEATSINK
PIN 2
PIN 1
PIN 3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL U(F,B)10BCT U(F,B)10CCT U(F,B)10DCT UNIT
Maximum repetitive peak reverse voltage VRRM 100 150 200 V
Max. average forward rectified current (Fig. 1) total device
per diode IF(AV) 10
5A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode IFSM 55 A
Electrostatic discharge capacitor voltage,
human body model: C = 150 pF, R = 1.5 kΩ (contact mode) VC 8kV
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min per diode VAC 1500 V
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
New Product
U(F,B)10BCT thru U(F,B)10DCT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88967
Revision: 13-May-08
2
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward voltage per diode (1)
IF = 3.0 A
IF = 5.0 A TJ = 25 °C
VF
0.97
1.05
-
1.10
V
IF = 3.0 A
IF = 5.0 A TJ = 150 °C 0.79
0.89
-
0.95
Maximum reverse current per diode (2) rated VR
TJ = 25 °C
TJ = 100 °C IR 0.5
100
5.0
200 µA
Maximum reverse recovery time per diode
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
13 20
ns
IF = 1.0 A, dI/dt = 100 A/µs,
VR = 30 V, Irr = 0.1 IRM
19.7 25
Maximum stored charge per diode IF = 2 A, dI/dt = 20 A/µs,
VR = 30 V, Irr = 0.1 IRM
Qrr 39nC
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL U10xCT UF10xCT UB10xCT UNIT
Typical thermal resistance per diode RθJA
RθJC
25
5.3
25
7.5
25
5.3 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB U10DCT-E3/4W 1.87 4W 50/tube Tube
ITO-220AB UF10DCT-E3/4W 1.77 4W 50/tube Tube
TO-263AB UB10DCT-E3/4W 1.31 4W 50/tube Tube
TO-263AB UB10DCT-E3/8W 1.31 8W 800/reel Tape and reel
New Product
U(F,B)10BCT thru U(F,B)10DCT
Vishay General Semiconductor
Document Number: 88967
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
Figure 3. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
12
10
8
6
4
2
0
0 25 50 75 100 125 150
Resistive or Inductive Load
Average Forward Rectified Current (A)
Case Temperature (°C)
U(B)10xCT
UF10xCT
6
5
4
3
2
1
0
0123456
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = 0.2
D = tp/T tp
T
100
10
1
110
100
Number of Cycles
Peak Forward Surge Current (A)
TJ = TJ max.
10 ms Single Half Sine-Wave
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Reverse Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
100
10
1
0.1
0.1 0.5 0.9 1.3 1.7 2.1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
10 000
1000
100
10
10 20 30 40 50 60 70 80 90 100
1
0.1
Percent of Rated Peak Reverse Voltage (%)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Instantaneous Reverse Current (µA)
100
10
1
0.1 1 10 100
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Junction Capacitance (pF)
New Product
U(F,B)10BCT thru U(F,B)10DCT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88967
Revision: 13-May-08
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.370 (9.40)
0.360 (9.14)
0.415 (10.54) MAX.
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45) 0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.154 (3.91)
0.148 (3.74)
13
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
ITO-220AB
0.076 (1.93) REF.
45° REF.
PIN
321
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.170 (4.32)
7° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.350 (8.89)
0.330 (8.38)
TO-263AB
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) MIN.
0.33 (8.38) MIN.
0.42 (10.66) MIN.
12
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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