1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
42 01.11.2003
2.5
max
1.3
±0.1
1.1
2.9
±0.1
0.4
12
3
Type
Code
1.9
BCW 65, BCW 66 General Purpose Transistors
NPN Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BCW 65 BCW 66
Collector-Emitter-voltage B open VCE0 32 V 45 V
Collector-Base-voltage E open VCB0 60 V 75 V
Emitter-Base-voltage C open VEB0 5 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (DC) IC800 mA
Peak Collector current – Kollektor-Spitzenstrom ICM 1000 mA
Base current – Basis-Spitzenstrom IB100 mA
Peak Base current – Basis-Spitzenstrom IBM 200 mA
Junction temperature – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 32 V BCW 65 ICB0 – – 20 nA
IE = 0, VCB = 32 V, Tj = 150/CI
CB0 – – 20 :A
IE = 0, VCB = 45 V BCW 66 ICB0 – – 20 nA
IE = 0, VCB = 45 V, Tj = 150/CI
CB0 – – 20 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 4 V IEB0 – – 20 nA
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
43
01.11.2003
General Purpose Transistors BCW 65, BCW 66
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
IC = 100 mA, IB = 10 mA VCEsat – – 300 mV
IC = 500 mA, IB = 50 mA VCEsat – – 700 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 100 mA, IB = 10 mA VBEsat – – 1.25 V
IC = 500 mA, IB = 50 mA VBEsat – – 2 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 10 V, IC = 100 :A
BCW 65A / 66F hFE 35 – –
BCW 65B / 66G hFE 50 – –
BCW 65C / 66H hFE 80 – –
VCE = 1 V, IC = 10 mA
BCW 65A / 66F hFE 75 – –
BCW 65B / 66G hFE 110 – –
BCW 65C / 66H hFE 180 – –
VCE = 1 V, IC = 100 mA
BCW 65A / 66F hFE 100 160 250
BCW 65B / 66G hFE 160 250 400
BCW 65C / 66H hFE 250 350 630
VCE = 2 V, IC = 500 mA
BCW 65A / 66F hFE –35–
BCW 65B / 66G hFE –60–
BCW 65C / 66H hFE – 100 –
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 50 mA, f = 100 MHz fT– 170 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 6 pF –
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 – 60 pF –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BCW 67, BCW 68
Marking – Stempelung BCW 65A = EA BCW 65B = EB BCW 65C = EC
BCW 66F = EF BCW 66G = EG BCW 66H = EH
