CPH6528 Ordering number : EN8708 SANYO Semiconductors DATA SHEET CPH6528 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Applications * MOSFET gate drivers, relay drivers, lamp drivers, motor drivers. Features * * Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting. Ultrasmall package permitting applied sets to be small and slim. Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--30)40 Collector-to-Emitter Voltage VCEO (--30)30 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current Collector Current (Pulse) IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg (--)700 V mA (--)1.4 A 0.6 W 150 C --55 to +150 C Mounted on a ceramic board (600mm20.8m) 1unit Electrical Characteristics at Ta=25C Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A DC Current Gain Gain-Bandwidth Product hFE fT VCE=(--)2V, IC=(--10)50mA VCE=(--)2V, IC=(--)50mA Output Capacitance Cob VCE(sat) VCB=(--)10V, f=1MHz IC=(--)200mA, IB=(--)10mA Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO IC=(--)200mA, IB=(--)10mA IC=(--)10A, IE=0A Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO IC=(--)1mA, RBE= IE=(--)10A, IC=0A Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Ratings min typ (200)300 max Unit (--)100 nA (--)100 nA (500)800 (520)540 MHz (4.7)3.3 pF (--110)85 (--220)190 (--)0.9 (--)1.2 mV V (--30)40 V (--)30 V (--)5 V Marking : EL Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 22006EA MS IM TB-00002078 No.8708-1/5 CPH6528 Package Dimensions unit : mm 7018-006 Electrical Connection 0.4 5 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 1 2 3 Top view 0.2 0.05 2.8 1.6 2 4 4 0.6 1 5 0.15 0.6 6 6 3 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 0.95 0.7 0.9 0.2 2.9 SANYO : CPH6 --400 A --1mA --200 --500A 10 5mA 3mA 30m 500 [NPN] 7mA mA 15m A 20mA 600 --3mA --2mA --300 IC -- VCE 700 2mA 400 1mA A --500 [PNP] A --20m A --15m A --10m A m 7 ---5mA Collector Current, IC -- mA -mA 40mA -- --50 Collector Current, IC -- mA --600 A mA 30m --25 300 50m IC -- VCE --700 400A 200 200A 100 --100 0 0 IB=0A 0 0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 Collector-to-Emitter Voltage, VCE -- mV IC -- VBE --800 IB=0A 100 200 300 400 500 600 700 Collector-to-Emitter Voltage, VCE -- mV IT05049 [PNP] IC -- VBE 800 1000 IT05082 [NPN] VCE=2V VCE= --2V 700 Ta=7 5 C 25C --25C --400 --300 --200 500 400 300 --25C --500 600 C 25C --600 Ta=7 5 Collector Current, IC -- mA --700 Collector Current, IC -- mA 900 800 200 100 --100 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT05050 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 IT05083 No.8708-2/5 CPH6528 hFE -- IC 1000 7 hFE -- IC 1000 7 DC Current Gain, hFE --25C 3 2 100 [NPN] VCE=2V Ta=75C Ta=75C 25C 5 DC Current Gain, hFE [PNP] VCE= --2V 25C 5 --25C 3 2 7 5 3 --1.0 2 3 5 7 --10 3 2 5 7 --100 2 3 Collector Current, IC -- mA VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 --100 7 5 C 7 Ta= 5C --2 5 C 3 2 2 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA VCE(sat) -- IC 3 5 3 2 5C --100 7 7 Ta= 5 C 25 3 2 --10 --1.0 5 C --2 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA VBE(sat) -- IC --10 Ta= --25C --1.0 7 75C 5 25C 3 2 --0.1 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT05056 5 7 1000 IT05084 [NPN] IC / IB=20 100 7 5 C 75 5C 3 2 2 Ta= 5 --2 C 10 7 5 3 2 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05085 VCE(sat) -- IC [NPN] IC / IB=50 5 3 2 C 75 100 7 C 25 5 C --2 5 = Ta 3 2 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05086 VBE(sat) -- IC 10 [NPN] IC / IB=20 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 Collector Current, IC -- mA [PNP] 3 2 3 2 10 1.0 5 7--1000 IT05055 5 5 7 100 7 IC / IB=20 7 3 VCE(sat) -- IC 1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 2 5 7 10 Collector Current, IC -- mA [PNP] --1000 3 1000 7 5 1.0 1.0 5 7--1000 IT05054 IC / IB=50 2 2 Collector Current, IC -- mA [PNP] IC / IB=20 7 5 100 1.0 5 7--1000 IT05051 5 3 2 Ta= --25C 1.0 7 75C 25C 5 3 2 0.1 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05087 No.8708-3/5 CPH6528 Cob -- VCB 10 10 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 7 5 3 2 0.1 --1.0 2 5 3 7 2 --10 5 3 2 2 3 5 7 2 10 [PNP] Gain-Bandwidth Product, fT -- MHz 3 2 100 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 [NPN] VCE=10V Collector Current, IC -- mA ASO 3 2 DC 10 0m op s er ati on 0.1 ms 10 2 7 5 2 2 2 3 5 7 10 2 3 5 7 100 2 PC -- Ta 0.7 0.6 s 0 Collector Current, IC -- A s s 0 1m IC=0.7A 3 3 3 3 5 7 1000 IT05089 [PNP/NPN] ICP=1.4A 50 7 5 5 Collector Current, IC -- mA [PNP/NPN] 10 1.0 7 100 1.0 5 7--1000 IT05052 Collector Dissipation, PC -- W Gain-Bandwidth Product, fT -- MHz 5 5 IT05088 fT -- IC 1000 VCE= --10V 7 3 Collector-to-Base Voltage, VCB -- V IT05053 fT -- IC [NPN] f=1MHz 7 1.0 1.0 5 3 Collector-to-Base Voltage, VCB -- V 1000 Cob -- VCB [PNP] f=1MHz Ta=25C Single pulse For PNP, minus sign is omitted. Mounted on a ceramic board (600mm20.8mm) 1unit 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V M ou nt 0.5 ed on ac er 0.4 am ic bo ar 0.3 d (6 00 m 0.2 m2 0. 8m m )1 0.1 un it 0 3 5 IT10759 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT10000 No.8708-4/5 CPH6528 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2006. Specifications and information herein are subject to change without notice. PS No.8708-5/5