CPH6528 - Sanyo Semiconductor - Datasheet.Directory

CPH6528

No.8708-1/5

Applications

•MOSFET gate drivers, relay drivers, lamp drivers, motor drivers.

Features

•Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting.

•Ultrasmall package permitting applied sets to be small and slim.

Specifications ( ) : PNP

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO (--30)40 V

Collector-to-Emitter Voltage VCEO (--30)30 V

Emitter-to-Base Voltage VEBO (--)5 V

Collector Current IC(--)700 mA

Collector Current (Pulse) ICP (--)1.4 A

Collector Dissipation PCMounted on a ceramic board (600mm2✕0.8m) 1unit 0.6 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Collector Cutoff Current ICBO VCB=(--)30V, IE=0A (--)100 nA

Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA

DC Current Gain hFE VCE=(--)2V, IC=(--10)50mA (200)300 (500)800

Gain-Bandwidth Product fTVCE=(--)2V, IC=(--)50mA (520)540 MHz

Output Capacitance Cob VCB=(--)10V, f=1MHz (4.7)3.3 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)200mA, IB=(--)10mA (--110)85 (--220)190 mV

Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)200mA, IB=(--)10mA (--)0.9 (--)1.2 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0A (--30)40 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)30 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (--)5 V

Marking : EL

Ordering number : EN8708

80906 / 22006EA MS IM TB-00002078

CPH6528 PNP / NPN Epitaxial Planar Silicon Transistor

Push-Pull Circuit Applications

SANYO Semiconductors

DATA SHEET

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

CPH6528

No.8708-2/5

Package Dimensions Electrical Connection

unit : mm

7018-006

[PNP] [NPN]

IC -- VCE

Collector-to-Emitter Voltage, VCE -- mV

Collector Current, IC -- mA

IC -- VCE

Collector-to-Emitter Voltage, VCE -- mV

Collector Current, IC -- mA

--200

--100

IT05049

--400

--300

--600

--500

--700

--200 --600--400 --800 --1000

--100 --500--300 --700 --900

IB=0A

--500µA

--1mA

--2mA

--5mA

--3mA

--7mA

--10mA

--15mA

--40mA

--50mA

--30mA

--20mA

--25mA

500

400

300

700

600

200

100

500 1000

800 900100 300 400 600 700

IT05082

IB=0A

200µA

400µA

1mA

2mA

3mA

5mA

7mA

10mA

50mA

15mA

30mA 20mA

[PNP] [NPN]

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- mA

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- mA

IT05050

0--0.2 --0.4 --0.6 --0.8 --1.0 --1.2

--200

--800

--500

--700

--400

--300

--600

--100

Ta=75°C

25°C

--25°C

VCE= --2V

300

400

200

800

700

600

500

100

0 0.2 0.4 0.6 0.8 1.0

IT05083

Ta=75°C

--25°C

25°C

VCE=2V

2.9

0.95

0.05

465

0.20.7 0.9 2.8

1.6

0.6 0.6

0.2

0.4 0.15

1 : Emitter1

2 : Base1

3 : Collector2

4 : Emitter2

5 : Base2

6 : Collector1

SANYO : CPH6

1 : Emitter1

2 : Base1

3 : Collector2

4 : Emitter2

5 : Base2

6 : Collector1

Top view

CPH6528

No.8708-3/5

[PNP] [NPN]

[PNP]

[NPN]

hFE -- IC

Collector Current, IC -- mA

DC Current Gain, hFE

VCE(sat) -- IC

Collector Current, IC -- mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

VCE(sat) -- IC

Collector Current, IC -- mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

hFE -- IC

Collector Current, IC -- mA

DC Current Gain, hFE

VCE(sat) -- IC

Collector Current, IC -- mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

VCE(sat) -- IC

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

Collector Current, IC -- mA

IT05051

100

--1.0 2357--10 23572357

--100 --1000

1000

VCE= --2V

Ta=75°C

25°C

--25°C

IT05054

--1.0 23 57

--10 23 57 23 57

--100 --1000

--1000

--100

--10

Ta=75

°C

--25°C

25°C

IC / IB=20

1.0 10 100 1000

257 3

257

1000

100

IT05084

Ta=75°C

--25°C

25°C

VCE=2V

IT05085

1.0

100

1000

1.0 23 5 10 100 1000

7 2357 2357

75°C

--25°C

Ta=25°C

IC / IB=20

IT05055

--1.0 23 57

--10 23 57 23 57

--100 --1000

--10

--1000

--100

Ta=75

°C

--25°C

25°C

IC / IB=50

IT05086

100

1000

1.0 23 510 100 1000

723 5723 57

IC / IB=50

75°C

--25°C

Ta=25°C

VBE(sat) -- IC

Collector Current, IC -- mA

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V

VBE(sat) -- IC

Collector Current, IC -- mA

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V

[PNP] [NPN]

--1.0 23 57

--10 23 57 23 57

--100 --1000

IT05056

--1.0

--10

--0.1

Ta= --25

°C

75°C

25°C

IC / IB=20

IT05087

1.0

0.1

1.0 23 510 100 1000

723 5723 57

IC / IB=20

75°C

Ta= --25°C

25°C

CPH6528

No.8708-4/5

0.1

1.0

0.01 23 57 23 57 23 5

0.1 1.0 10

100µs

500µs

1ms

10ms

100ms

DC operation

ICP=1.4A

IC=0.7A

[PNP/NPN]

Cob -- VCB

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

fT -- IC

Collector Current, IC -- mA

Gain-Bandwidth Product, fT -- MHz

Cob -- VCB

Output Capacitance, Cob -- pF

Collector-to-Base Voltage, VCB -- V

fT -- IC

Collector Current, IC -- mA

Gain-Bandwidth Product, fT -- MHz

[PNP] [NPN]

A S O

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

PC -- Ta

Collector Dissipation, PC -- W

Ambient Temperature, Ta -- °C

IT05053

--1.0

0.1 --10

2357235

f=1MHz

IT05052

--1.0 23 57 23 57 23 57

--10 --100 --1000

100

1000

VCE= --10V

IT05089

100

1000

101.0 100

23 5723 57 1000

23 57

VCE=10V

IT05088

1.0

1.0 10

23 5 23 57

f=1MHz

IT10000

0.6

0.7

0.5

0.3

0.4

0.1

0.2

020 40 60 80 100 120 140 160

[PNP/NPN]

Ta=25°C

Single pulse

For PNP, minus sign is omitted.

Mounted on a ceramic board (600mm

✕0.8mm) 1unit

Mounted on a ceramic board (600mm

✕0.8mm) 1unit

IT10759

CPH6528

No.8708-5/5PS

Specifications of any and all SANYO Semiconductor products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state,

and are not guarantees of the performance, characteristics, and functions of the described products

as mounted in the customer's products or equipment. To verify symptoms and states that cannot be

evaluated in an independent device, the customer should always evaluate and test devices mounted

in the customer's products or equipment.

SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any

and all semiconductor products fail with some probability. It is possible that these probabilistic failures

could give rise to accidents or events that could endanger human lives, that could give rise to smoke or

fire, or that could cause damage to other property. When designing equipment, adopt safety measures

so that these kinds of accidents or events cannot occur. Such measures include but are not limited to

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In the event that any or all SANYO Semiconductor products (including technical data,services) described

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Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO Semiconductor product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not

guaranteed for volume production. SANYO Semiconductor believes information herein is accurate

and reliable, but no guarantees are made or implied regarding its use or any infringements of

intellectual property rights or other rights of third parties.

This catalog provides information as of February , 2006. Specifications and information herein are subject

to change without notice.