8773295 SUPERTEX INC Oe gs O1 pe azzaeas oO01650 1h i VN12A TT. 37-03 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss / Rosco) Secon Order Number / Package BY bcs (max) (min) TO-3 TO-39 TO-220 Dice 40V 0.30 20A VN1204N1 VN1204N2 VN1204N5 VN1204ND 60V 0.32 20A VN1206N1 VNi206N2 | VN1Z06N5 | VNi2Z06ND 100V 0.32 20A VNi210N1 VN1210N2 VN1210N5 VN1210ND Features Advanced DMOS Technology ( Freedom from secondary breakdown These enhancement-mode (normally-off} power transistors util- [1 Low power drive requirement ize a vertical DMOS structure and Supertex's well-proven silicon- Po q gate manufacturing process. This combination produces devices O Ease of paralleling with the power handling capabilities of bipolar transistors and with set the high input impedance and negative temperature coefficient 1 Low Cjgq and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, O Excellent thermal stability these devices are free from thermal runaway and thermally- (0 Integral Source-Drain diode induced secondary breakdown. toh | . : . Supertex Vertical DMOS Power FETs are ideally suited to a wide Ci High input impedance and high gain ; range of switching and amplifying applications where high break- ( Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options (Note 1) 0) Motor control C Converters + > CO Amplifiers > O Switches i Power supply circuits 10-3 1 Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) POR GO Cy Absolute Maximum Ratings | Drain-to-Source Voltage BY g pes 0-39 70-220 Drain-to-Gate Voltage BV pgs Gate-to-Source Voltage 20V Operating and Storage Temperature -65C to +150C Soldering Temperature* 300G Note 1: See Package Outline section for discrete pinouts. Distance of 1.6 mm from case for 10 seconds. ane AGE ae ee eee ca | wien O1 ve Bazzaess QOOLES1 43 i 8773295 SUPERTEX INC . gs VNI2A Thermal Characteristics 7-39-(3 Package bh (continuous)* 1, (pulsed)* Power Dissipation Ge Go ton loam @T, = 25C . CW CWW TO-3 12A a5A 100W 30 1.25 12A 35A TO-39 2 8.5A 15A 6.5W 125 20 3.5A 165A TO-220 9A 835A 45W 70 2.75 9A 35A Ip (continuous) is timited by max rated T). Electrical Characteristics (@ 25C unless otherwise specified) (Notes 1 and 2) Symbo! Parameter Min Typ Max Unit Conditions BY ps5 Drain-to-Source VN1210 100 Breakdown Voltage vNi206 | 60 V Vag = 01 Ip = 10mA VN1204 40 Vasa Gate Threshold Voltage 0.8 2.4 Vv Vas = Vos: Ip = 10MA AV sin Change in Vegq, With Temperature -4.3 } -6.5 ) mv Vas = Voge !p = 10MA less Gate Body Leakage 1 100 nA Ves 72 20V, Vig= 0 loss Zero Gate Voltage Drain Current 100 pA Vag = 0: Vpg = Max Rating 10 mA Vag = 0: Vg = 0.8 Max Rating T, = 125C lyon ON-State Drain Current 5 10 A Ves = BV: Vg = 25V 20 35 Vag = 10V, Vog = 25V Poston Static Drain-to-Source 0.22 0.45 2 Vag = SV, |p = 2A ON-State Resistance 0.2 03 Vag = 10V, Ip = 10A ARpsion) | Change in Rosiow With Temperature 0.85 12) PC Vag = 10V, |, = 10A Ces Forward Transconductance 4.0 45 ov Vos = 25V, |p = 2A Cigg Input Capacitance 600 | 650 : - Vag = 0: Vg = 25V Coss Common Source Output Capacitance 300 350 pF f=1MHz Cass Reverse Transfer Capacitance 50 75 teon Turn-ON Delay Time 8 20 V. =28V t, Rise Time 8 20 ; bo 5A . ns = taoee Turn-OFF Delay Time 70 90 Re 600 t Fall Time 40 60 Vp Diode Forward Voltage Drop 1.2 1.4 Vv Veg = 0) Ign = 104 t, Reverse Recovery Time 500 ns Veg = 01 Ign = 1A Note 1: All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300ps p Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit input 10%) /* Output nny) {ON} \(OFF) ta(Ony , te ta(OFF), 10% Kom aN 90% 8-82 ise, 2% duty cycle.) SCOPE D.U.T, SUPERTEX INC Typical Performance Curves Output Characteristics Gs=1 Bo Ww uw a 2 < 2 0 10 20 30 40 60 Vps (VOLTS) Transconductance Vs. Drain Current Vps = 25V a 2 TTF = w 4 n mh 6 0 5 10 15 20 25 ID (AMPERES} Maximum Rated Safe Operating Area 7100 10 kr) a a fc <S wi Qn $ = *O < On y LIMITED BY BVosSs 01 0.1 1.0 10 400 t Pulse Condition: 300us, 2% dutycycle. Vos (VOLTS) PDAWATTS) \p (AMPERES) THERMAL RESISTANCE (NORMALIZED) ou pe Parzaeas OOO1bSe S i 7-39-73 Saturation Characteristics B VGs = 10V 20 0 2 4 6 8 10 Vps (VOLTS) Power Dissipation Vs. Case Temperature 100 TO-3 80 a 40 20 TO-39 0 25 50 75 100 125 160 Tc PC) Thermal Response Characteristics TO-39 Te = 26C Pp = 6.25W A 1 10 tp (SECONDS) 001 01 owen eee 2 Re a SUPERTEX INC o, pe Qjarv7z2q5 o001653 7 VNI2A T-37-'3 BVDSS Variation with Temperature ON - Resistance Vs. Drain Currant VGs =5V | : ~ Vas = 10V a . uw _ x g Z = = 2 & = 2 2 9 w gn a 8 ec > a 50 oO 50 100 150 0 10 20 30 40 50 Ts Pc) Ips (AMPERES) Transfer Characteristics Vith) and RDS Variation with Temperature 25 1.6 2.0 Vps = 25V ID =10A Ty = 55C 20 1.3 16 6 ~ Ww ri N ~ N 2 G 15 2 1 12 = a = "5 a x 8 = 3 ry < 10 = 0.9 og 2 a z 5 5 g Gg iq 5 > 0.7 0.4 oO 0.5 0 0 2 4 6 8 10 50 0 50 100 150 Ves (VOLTS) Ty PC) Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 1000 10 f= 1MHz 750 8 ~ Vps = 10V a ened a ! <q ciss e 6 1260pF 40v c a < 500 s fe) 5 2 1300pF Coss. 2 4 z= oO & > nr) XQ 2 Pp CRSss= 0 0 10 20 30 40 0 2 4 6 8 10 Vps (VOLTS) Qg (NANOCOULOMBS) 8-84