2N5400
PNP General Purpose Amplifier
2N5400
This device is designed for use as general purpose amplifiers
and switches requiring high voltages.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Co llector-Emitter Vol t age 120 V
VCBO Collector-Base Voltage 130 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous600mA
TJ, Tstg Operating and Stora ge Junction Tempe rature Ra nge -55 to +150 °C
Symbol Characteristic Max Units
2N5400
PDTotal D evice Dissipation
Derate above 25°C625
5.0 mW
mW/°C
RθJC Therm al Resistance, Junction to C ase 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
CBETO-92
2001 Fairchild Semiconductor Corporation 2N5400, Rev A
2N5400
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Bre akdown Voltage* IC = 1.0 mA, IB = 0 120 V
V(BR)CBO Collector-Base Breakd own Voltage IC = 100 µA, IE = 0 130 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
ICBO Collecto r Cutoff Current VCB = 100 V, IE = 0
VCB = 100 V, IE = 0, TA = 100 °C100
100 nA
µA
IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA
ON CHARACTERISTICS*
hFE DC Current Ga in VCE = 5.0 V, IC = 1.0 mA
VCE = 5.0 V, IC = 10 m A
VCE = 5.0 V, IC = 50 m A
30
40
40 180
VCE(sat)Collector-Em itter Saturatio n V olta g e IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.2
0.5 V
V
VBE(sat)Base -E mitte r Saturatio n V olta g e IC = 10 mA, IB = 1.0 m A
IC = 50 mA, IB = 5.0 mA 1.0
1.0 V
V
SMALL SIGNAL CHARACTERISTICS
Cob Output Ca pacitance VCB = 10 V, f = 1.0 MHz 6.0 pF
fTCurrent Gain - Bandw idth Product IC = 10 mA, VCE = 10 V,
f = 100 MHz 100 400
hfe Small-Signal Current Gai n IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz 30 200
NF Noise Figu r e VCE = 5.0 V, IC = 250 µA,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
8.0 V
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
Typical Characteristics
C o llec tor- E mitte r Br eakdo w n
Voltage wit h Re sist ance
Betw een Emitt er-Base
0.1 1 10 100 1000
170
180
190
200
210
220
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
Typ i cal Pulsed C urr ent Gai n
vs Collector Cur rent
0.0001 0.001 0.01 0.1 1
0
50
100
150
200
I - COLLECTOR CURRE NT (A)
h - TYPIC AL PU LSED CURRENT GAIN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
Co l lecto r-Emi tter Satu r ati on
Vo ltage vs C o llector Cur rent
0.1 1 10 100
0
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
C
β= 10
125 °C
- 40 °C
25 °C
Base-Emitter ON Voltage vs
Co llector Cur rent
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE- EMITTER ON VOLTAGE ( V)
BE(ON)
125 °C
- 40 °C
25 °C
C
V = 5V
CE
B ase-Emitter Saturation
Volt ag e vs C ollect o r C ur rent
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BA SE-EM ITTER VOLTAGE (V)
BESAT
C
β= 10
125 °C
- 40 °C
25 °C
Co llector-Cu to ff Current
vs Ambien t Temperatur e
25 50 75 100 125 150
0.1
1
10
100
T - AM BIENT TE MPE RATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 100V
CB
CBO
°
PNP General Purpose Amplifier
(continued)
2N5400
Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
Input and Out put Capacitance
vs Reverse Voltage
0.1 1 10 100
0
20
40
60
80
V - REVERSE BIAS VOLT AGE(V)
CAP ACITAN CE ( p F)
C
f = 1.0 MHz
R
C
cb
eb
2N5400
TO-92 Tape and Reel Data
March 2001, Rev. B1
©2001 Fairchild Semiconductor Corporation
TO-92 Packaging
Configuration: Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
EO70 box for
std option
FSCINT Label
530mm x 130m m x
83mm
Inter med iate box
10,000 units maximum
per
intermediate box
for std option
FSCINT Label
114mm x 102m m x 51mm
Immed iate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
CODE DESCRIPTION LEADCLIP
DIMENSION QUANTITY
J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX
J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX
NO EOL
CODE TO-92 STANDARD
STRAIGHT FOR: PKG 92, NO LEADCLIP 2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
375mm x 267m m x 375mm
Inter med iate Box
FSCINT
Label
Customized
Label
333mm x 231m m x 183mm
Inter med iate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Pack ing Style Quantity EO L code
Reel A 2,000 D26Z
E2,000 D27Z
Ammo M 2,000 D74Z
P2,000 D75Z
U nit we ight = 0.22 gm
Reel weig ht with co mp o nents = 1.04 kg
Ammo w e i g ht with comp onen ts = 1.02 kg
Max quantity p er interme d iate box = 1 0,000 units
F63TNR
Label
5 Ammo boxes per
Inter med iate Box
Customized
Label
327mm x 158m m x 135mm
Immed iate Box
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
D9842
SPEC REV:
B2
SPEC:
QTY:
10000
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATI ON
HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
Inter med iate Box
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK74 1B019
FS ID: PN 2 22N
D/C1: D9842 QTY1: SPEC REV:
SPEC:
QTY: 2000
D/C2: QTY2: CPN: N/F: F (F63TNR)3
F63TNR Label sample
FSCINT Label sample
C
5 EO70 boxes per
intermediate Box
ustomized
Label
94 (NON PROELECTRON
SERIES), 96
L34Z TO-92 STANDARD
STRAIGHT FOR: PKG 94 NO LEADCLIP 2.0 K / BOX
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
TO-92 Tape and Reel Data, continued
September 1999, Rev. B
TO-92 Reeling Style
Configuration: Figure 2.0
Style “A”, D26Z, D70 Z (s/h)
Machine Op tion “A” (H)
Style “E ”, D2 7Z, D 71Z (s/ h)
Machine O ption “E” (J)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COL LECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
ITEM DESCRIPTION
Base of Package to Lead Bend
Com p on en t Heig ht
Lead Clinch Height
Com p on en t Ba s e He ig ht
Com p on en t Al ig nm e nt ( sid e/s id e )
Com p on en t Al ig nm e nt ( front/bac k )
Com p on en t Pitc h
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Le ngth
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape W idth
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out
SYMBOL
b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S
DIMENSION
0. 09 8 (m ax )
0. 92 8 (+ /- 0.025)
0. 63 0 (+ /- 0.020)
0. 74 8 (+ /- 0.020)
0. 04 0 (m ax )
0. 03 1 (m ax )
0. 50 0 (+ /- 0.020)
0. 50 0 (+ /- 0.008)
0. 15 0 (+ 0 .00 9, -0 .0 10 )
0. 24 7 (+ /- 0.007)
0. 10 4 (+ /- 0 . 01 0)
0. 01 8 (+ 0 .00 2, -0 .0 03 )
0. 42 9 (m ax )
0. 20 9 (+ 0 .05 1, -0 .0 52 )
0. 03 2 (+ /- 0.006)
0. 02 1 (+ /- 0.006)
0. 70 8 (+ 0 .02 0, -0 .0 19 )
0. 23 6 (+ /- 0.012)
0. 03 5 (m ax )
0. 36 0 (+ /- 0.025)
0. 15 7 (+ 0 .00 8, -0 .0 07 )
0. 00 4 (m ax )
Note : All d im ensions are in inches .
ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM
Ree l Di am e ter D1 13.9 75 14. 02 5
Arb or Hol e Di am et er (S ta nd ard) D2 1.16 0 1.200
(Small Hole) D2 0.650 0.700
Core Diameter D3 3.100 3.300
Hub Recess Inner Diameter D4 2.700 3.100
Hub Recess Depth W1 0.370 0. 570
Flange to Flange Inner Width W2 1.630 1.690
Hub to Hub Center W idth W3 2 .090
Note: All dimensions are inches
TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0
Ha
H1 HO
PO
P2
P1 F1
DO
P Pd
b
d
L1
LS
WO W2
W
t
t1
Hd
W1
TO-92 Reel
Configuration: Figure 5.0
User D ire c tion of Feed
SENSITIV E DE VICES
ELECTROSTATIC
D1
D3
Customiz ed Label
W2
W1 W3
F63 TNR Label
D4
D2
TO-92 Tape and Reel Data, continued
July 1999, Rev. A
TO-92 (FS PKG Code 92, 94, 96)
TO-92 Package Dimensions
January 2000, Rev. B
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
©2000 Fairchild Semiconductor International
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
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the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
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Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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