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7/20/04
IRFB23N15DPbF
IRFS23N15DPbF
IRFSL23N15DPbF
SMPS MOSFET
HEXFET® Power MOSFET
lHigh frequency DC-DC converters
Benefits
Applications
lLow Gate-to-Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
VDSS RDS(on) max ID
150V 0.090Ω23A
Typical SMPS Topologies
l Telecom 48V input DC-DC Active Clamp Reset Forward Converter
D2Pak
IRFS23N15D
TO-220AB
IRFB23N15D
TO-262
IRFSL23N15D
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 23
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 17 A
IDM Pulsed Drain Current 92
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 136
Linear Derating Factor 0.9 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 4.1 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Notes through are on page 11
PD - 95535
lLead-Free
IRFB/IRFS/IRFSL23N15DPbF
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Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 11 ––– ––– S VDS = 25V, ID = 14A
QgTotal Gate Charge ––– 37 56 ID = 14A
Qgs Gate-to-Source Charge ––– 9.6 14 nC VDS = 120V
Qgd Gate-to-Drain ("Miller") Charge ––– 19 29 VGS = 10V,
td(on) Turn-On Delay Time ––– 10 ––– VDD = 75V
trRise Time ––– 32 ––– ID = 14A
td(off) Turn-Off Delay Time ––– 18 ––– RG = 5.1Ω
tfFall Time ––– 8.4 ––– VGS = 10V
Ciss Input Capacitance ––– 1200 ––– VGS = 0V
Coss Output Capacitance ––– 260 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 65 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 1520 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 120 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 210 ––– VGS = 0V, VDS = 0V to 120V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 260 mJ
IAR Avalanche Current––– 14 A
EAR Repetitive Avalanche Energy––– 13.6 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V
trr Reverse Recovery Time ––– 150 220 ns TJ = 25°C, IF = 14A
Qrr Reverse RecoveryCharge ––– 0.8 1.2 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
23
92
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.090 ΩVGS = 10V, ID = 14A
VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
––– ––– 25 µA VDS = 150V, VGS = 0V
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V
IGSS
IDSS Drain-to-Source Leakage Current
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.1
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient––– 62
RθJA Junction-to-Ambient––– 40
IRFB/IRFS/IRFSL23N15DPbF
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
4 5 6 7 8 9 10 11 12
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
23A
IRFB/IRFS/IRFSL23N15DPbF
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
010 20 30 40 50 60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
14A
V = 30V
DS
V = 75V
DS
V = 120V
DS
110 100 1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss
= C
gs + C
gd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds
+ C
gd
IRFB/IRFS/IRFSL23N15DPbF
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Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
5
10
15
20
25
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRFB/IRFS/IRFSL23N15DPbF
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
14A
9.8A
5.6A
IRFB/IRFS/IRFSL23N15DPbF
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRFB/IRFS/IRFSL23N15DPbF
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TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE:
IN THE ASSEMBLY LINE "C"
T HIS IS AN IRF1010
LOT CODE 1789
AS S E MB LED ON WW 19, 1997 PART NUMBER
ASSEMBLY
LOT CODE
DAT E CODE
YEAR 7 = 1997
LINE C
WEEK 19
LOGO
RECT IFIER
INT E R NAT IONAL
Note: "P" in assembly line
position indicates "Lead-Free"
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
LEAD ASSIGNMENTS
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
IRFB/IRFS/IRFSL23N15DPbF
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N ote: "P " in as s embly line
pos ition in dicates "L ead-F ree"
F530S
T H IS IS AN IR F 530S WIT H
LOT CODE 8024
AS S EMB LED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
AS S E M B L Y
LOT CODE
IN T E R N AT IONAL
RECTIFIER
LOGO
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
F 530S
A = ASSEMBLY SITE CODE
WEEK 02
P = DES IGNATES LEAD-FREE
PRODUCT (OPTIONAL)
RECTIFIER
IN T E R N AT ION AL
LOGO
LOT CODE
AS S E MB L Y
YEAR 0 = 2000
DAT E CODE
PART NUMBER
D2Pak Part Marking Information (Lead-Free)
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
IRFB/IRFS/IRFSL23N15DPbF
10 www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline
ASSEMBLY
LOT CODE
RECTIFIER
INT E R NAT IONAL
AS S E MB LED ON WW 19, 1997
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
IN THE ASSEMBLY LINE "C" LOGO
T H IS IS AN IR L 3103L
LOT CODE 1789
EXAMPLE:
LINE C
DATE CODE
WEE K 19
YE AR 7 = 1997
PART NUMBER
PART NUMBER
LOGO
LOT CODE
ASSEMBLY
INT E R NAT IONAL
RECTIFIER
PRODUCT (OPTIONAL)
P = DE S I GN AT E S L E AD -F R E E
A = ASSEMBLY SITE CODE
WEEK 19
YE AR 7 = 1997
DAT E CODE
OR
IRFB/IRFS/IRFSL23N15DPbF
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Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ 14A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 2.7mH
RG = 25Ω, IAS = 14A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak Tape & Reel Infomation
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
