PD - 95535 IRFB23N15DPbF IRFS23N15DPbF IRFSL23N15DPbF SMPS MOSFET HEXFET(R) Power MOSFET Applications High frequency DC-DC converters l l Lead-Free VDSS RDS(on) max ID 150V 0.090 23A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB23N15D and Current l D2Pak IRFS23N15D TO-262 IRFSL23N15D Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 23 17 92 3.8 136 0.9 30 4.1 -55 to + 175 Units A W W/C V V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Typical SMPS Topologies l Telecom 48V input DC-DC Active Clamp Reset Forward Converter Notes through www.irf.com are on page 11 1 7/20/04 IRFB/IRFS/IRFSL23N15DPbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 --- --- 3.0 --- --- --- --- Typ. --- 0.18 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.090 VGS = 10V, ID = 14A 5.5 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 11 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 37 9.6 19 10 32 18 8.4 1200 260 65 1520 120 210 Max. Units Conditions --- S VDS = 25V, ID = 14A 56 ID = 14A 14 nC VDS = 120V 29 VGS = 10V, --- VDD = 75V --- ID = 14A ns --- RG = 5.1 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 120V, = 1.0MHz --- VGS = 0V, VDS = 0V to 120V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 260 14 13.6 mJ A mJ Typ. Max. Units --- 0.50 --- --- 1.1 --- 62 40 Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient C/W Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 23 --- --- showing the A G integral reverse --- --- 92 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 14A, VGS = 0V --- 150 220 ns TJ = 25C, IF = 14A --- 0.8 1.2 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFB/IRFS/IRFSL23N15DPbF 100 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 10 1 5.0V 0.1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 10 5.0V 3.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 175 C 10 TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 5 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 4 20s PULSE WIDTH TJ = 175 C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 0.1 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 12 ID = 23A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFB/IRFS/IRFSL23N15DPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) Coss = Cds + Cgd Ciss 1000 Coss 100 Crss 20 VGS , Gate-to-Source Voltage (V) 10000 10 100 VDS = 120V VDS = 75V VDS = 30V 16 12 8 4 10 1 ID = 14A 0 1000 FOR TEST CIRCUIT SEE FIGURE 13 0 10 100 40 50 60 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 TJ = 175 C TJ = 25 C 1 100 10us 100us 10 1ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 1.4 1 TC = 25 C TJ = 175 C Single Pulse 1 10ms 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFB/IRFS/IRFSL23N15DPbF 25 V DS VGS ID , Drain Current (A) 20 D.U.T. RG 15 RD + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.05 0.02 0.01 0.01 0.00001 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) IRFB/IRFS/IRFSL23N15DPbF 600 TOP 500 BOTTOM ID 14A 9.8A 5.6A 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50K 12V QGS .2F .3F QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFB/IRFS/IRFSL23N15DPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFB/IRFS/IRFSL23N15DPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 1.40 (.055) 1.15 (.045) 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 3- EMITTER 4 - DRAIN HEXFET 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE 8 PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C www.irf.com IRFB/IRFS/IRFSL23N15DPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL R E CT IF IE R L O GO N ote: "P " in as s em bly lin e po s i tion in dicates "L ead-F r ee" P AR T N U M B E R F 53 0 S AS S E M B L Y L O T CO D E D AT E CO D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E www.irf.com P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 W E E K 02 A = AS S E M B L Y S IT E CO D E 9 IRFB/IRFS/IRFSL23N15DPbF TO-262 Package Outline TO-262 Part Marking Information E X AMP L E : T H IS IS AN IR L 3 1 03 L L OT COD E 17 8 9 AS S E M B L E D ON WW 19 , 1 9 97 IN T H E AS S E MB L Y L IN E "C" N ote: "P " in as s em bly line pos ition indicates "L ead-F ree" IN T E R N AT ION AL R E CT IF I E R L OGO AS S E M B L Y L OT COD E P AR T N U MB E R D AT E COD E Y E AR 7 = 1 9 97 WE E K 19 L IN E C OR IN T E R N AT ION AL R E CT IF I E R L OGO AS S E M B L Y L OT COD E 10 P AR T N U MB E R D AT E COD E P = D E S I GN AT E S L E AD -F R E E P R OD U CT (OP T ION AL ) Y E AR 7 = 1 9 9 7 WE E K 19 A = AS S E MB L Y S IT E COD E www.irf.com IRFB/IRFS/IRFSL23N15DPbF D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 2.7mH RG = 25, IAS = 14A. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS This is only applied to TO-220AB package TJ 175C This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ISD 14A, di/dt 240A/s, VDD V(BR)DSS, Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/