IRFB/IRFS/IRFSL23N15DPbF
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Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 11 ––– ––– S VDS = 25V, ID = 14A
QgTotal Gate Charge ––– 37 56 ID = 14A
Qgs Gate-to-Source Charge ––– 9.6 14 nC VDS = 120V
Qgd Gate-to-Drain ("Miller") Charge ––– 19 29 VGS = 10V,
td(on) Turn-On Delay Time ––– 10 ––– VDD = 75V
trRise Time ––– 32 ––– ID = 14A
td(off) Turn-Off Delay Time ––– 18 ––– RG = 5.1Ω
tfFall Time ––– 8.4 ––– VGS = 10V
Ciss Input Capacitance ––– 1200 ––– VGS = 0V
Coss Output Capacitance ––– 260 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 65 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 1520 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 120 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 210 ––– VGS = 0V, VDS = 0V to 120V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 260 mJ
IAR Avalanche Current––– 14 A
EAR Repetitive Avalanche Energy––– 13.6 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V
trr Reverse Recovery Time ––– 150 220 ns TJ = 25°C, IF = 14A
Qrr Reverse RecoveryCharge ––– 0.8 1.2 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
23
92
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.090 ΩVGS = 10V, ID = 14A
VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
––– ––– 25 µA VDS = 150V, VGS = 0V
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V
IGSS
IDSS Drain-to-Source Leakage Current
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.1
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient––– 62
RθJA Junction-to-Ambient––– 40