HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6319-B
Issued Date : 1996.07.18
Revised Date : 2000. 10.01
Page No. : 1/4
HSMC Product Specifi cation
HMPS8599
PNP SILICON TRANSISTOR
Description
HMPS8599 is designed for general purpose amplifier applications.
Features
• Low Collector-Emitter Saturation Voltage
• HMPS8599 is complementary to HMPS8099
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +125 °C
Junction Temperatur e................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -80 V
VCES Collector to Emitter Voltage..................................................................................... -80 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current...................................................................................................... -500 mA
Characteristics (Ta=25 °C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -80 - - V IC=-100uA, IE=0
BVCEO -80 - - V IC=-10mA, IB= 0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -100 nA VCB=-80V, IE=0
IEBO - - -100 nA VEB=-4V, IC= 0
ICEO - - -100 nA VCE=-60V, IB=0
*hFE1 100 - 300 IC=-1mA, VCE=-5V
*hFE2 100 - - IC=-10mA, VC E= -5V
*hFE3 75 - - IC=-100mA, VCE=-5V
*VCE(sat)1 - - -0.4 V IC=-100mA, IB=-5mA
*VCE(sat)2 - - -0.3 V IC=-100mA, IB=-10mA
VBE(on) -0.6 - -0.8 V IC=-10mA, VCE= - 5V
fT 150 - - MHz VCE=-5V, IC=-10mA, f=100MHz
Cob - - 8 PF VCB=-5V, IE=0, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%