IRSF3021LTR - International Rectifier

Data Sheet No. PD 60068-I

Description

The IRSF3021 Lamp and DC motor driver is a fully protected

three terminal monolithic Smart Power MOSFET that fea-

tures current limiting, over-temperature protection, ESD

protection and over-voltage protection.

The on-chip protection circuit limits the drain current at 5.5A

(typical) in the on-state, when the load is short circuited. The

over-temperature circuitry turns off the Power MOSFET when

the junction temperature exceeds 165°C (typical). The device

restarts automatically once it has cooled down below the reset

temperature.

The IRSF3021 is specifically designed for driving loads that

require overload protection and in-rush current control while

operating in automotive and industrial environments. Tar-

geted applications include resistive loads such as lamps or

capacitive loads such as airbag squibs and DC motor drives.

FULLY PRO TECTED POWER MOSFET SWITCH

Features

• Controlled slew rate reduces EMI

• Over temperature protection with auto-restart

• Linear current-limit protection

• Active drain-to-source clamp

• ESD protection

• Lead compatible with standard Power MOSFET

• Low operating input current

• Monolithic construction

Applications

• Cabin Lighting

• Airbag System

• Programmable Logic Controller

• DC Motor Drive

IRSF3021 (NOTE: For new designs, we

recommend IR’s new products IPS021 and IPS021L)

Product Summary

Source

SOURCE

Vds(clamp) 50V

Rds(on) 200mΩ

Ilim 5.5A

Tj(sd) 165oC

EAS 200mJ

Packages

3 Lead

TO220AB

3 Lead

SOT223

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Block Diagram

Drain

Input

DRAIN

INPUT

IRSF3021

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NOTES:

① When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques,

refer to International Rectifier Application Note AN-994.

② EAS is tested with a constant current source of 6A applied for 700µS with Vin = 0V and starting Tj = 25oC.

③ Input current must be limited to less than 5mA with a 1kΩ resistor in series with the input when the Body-Drain Diode is

forward biased.

Symbol Parameter Min. Typ. Max. Units Test Conditions

Rthjc Junction to case — — 4 oC/W TO-220AB

Rthja Junction to ambient — — 60

Rthjc Junction to case — — 40 oC/W SOT-223

Rthja Junction to PCB ➀——60

Thermal Characteristics

Symbol Parameter Min. Typ. Max. Units Test Conditions

ds,clamp Drain to source clamp voltage 50 56 65 VIds = 6A, tp = 700 µS

Rds(on) Drain to source on resistance — 155 200 mΩVin = 5V, Ids = 2A

Idss Drain to source leakage current — — 2 50 µAV

ds = 40V, Vin = 0V

Vth Input threshold voltage 1.0 2.0 3.0 V Vds= Vin, Ids+ Iin= 10mA

Ii,on Input supply current (Normal Operation) — 100 300 µAV

in = 5V

Ii,off Input supply current (Protection Mode) — 250 500 µAV

in = 5V

Vin, clamp Input clamp voltage 9 10 — Iin = 1mA

Vsd Body-drain diode forward drop➂— 1.5 — Ids = -2A, Rin = 1kΩ

Static Electrical Characteristics

(TC = 25oC unless otherwise specified.)

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.

(TC = 25oC unless otherwise specified.)

Symbol Parameter Min. Max. Units Test Conditions

Vds, max Continuous drain to source voltage — 50 V

Vin, max Continuous input voltage -0.3 10

Ids Continuous drain current — self limited A

PdPower dissipation — 30 W Tc ≤ 25oC, TO220

—3WT

c ≤ 25oC, SOT223

EAS Unclamped single pulse inductive energyÁ— 200 mJ

Vesd1 Electrostatic discharge voltage (Human Body Model) — 4000 V100pF, 1.5kΩ

Vesd2 Electrostatic discharge voltage (Machine Model) — 1000 200pF, 0Ω

TJop Operating junction temperature range -55

150

TStg Storage temperature range -55 150 oC

TLLead temperature (soldering, 10 seconds) — 300

IRSF3021

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Switching ElectricalCharacteristics

(VCC = 14V, resistive load (RL) = 10Ω, Rin= 100Ω. Specifications measured at TC= 25 oC unless other-

wise specified.)

Symbol Parameter Min. Typ. Max. Units Test Conditions

tdon Turn-on delay time — 10 50 Vin= 0V to 5V, 50% to 90%

trRise Time — 30 80 µsVin= 0V to 5V, 90% to 10%

tdoff Turn-off delay time — 20 60 Vin= 5V to 0V, 50% to 10%

tfFall time — 15 50 Vin= 5V to 0V, 10% to 90%

SR Output positive slew rate - 4 — 4 V/µsVin= 0V to 5V, +dVds/dt

SR Output negative slew rate - 4 — 4 Vin= 5V to 0V, -dVds/dt

Protection Characteristics

(TC= 25oC unless otherwise specified.

Symbol Parameter Min. Typ. Max. Units Test Conditions

Ids(lim) Current limit 3.0 5.5 8 .0 A Vin = 5V, Vds = 14V

Tj(sd) Over temperature shutdown threshold 1 5 5 1 6 5 — oCV

in = 5V, Ids = 2A

Vprotect Min. input voltage for over-temp function — 3 — V

tIresp Current limit response time — TBD — µs

Ipeak Peak short circuit current — 10 — A

tTresp Over-temperature response time — TBD — µs

Lead Assignments

Part Number

(2) D

1 2 3

In D S

3 Lead - SOT223

IRSF3021L

1 2 3

In D S

3 Lead - TO220

2 (D)

IRSF3021

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(TO-261AA) 01-0022 05

Case Outline - SOT-223

IRSF3021

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 0BL, United Kingdom

Tel: ++44 (0) 20 8645 8000

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 81 (0) 33 983 0086

IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon,

Hong Kong Tel: (852) 2803-7380

Data and specifications subject to change without notice. 4/11/2000

Tape & Reel - SOT223

01-0028 05 / 01-0008 02

IRGB 01-3026 01

Case Outline 3 Lead - TO220

NOTES:

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/