1
MRF555MOTOROLA RF DEVICE DATA
The RF Line
 
   
Designed primarily for wideband large signal predriver stages in the UHF
frequency range.
Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W
Common Emitter Power Gain = 12.5 dB (Typ)
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 16 Vdc
Collector–Base Voltage VCBO 36 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Collector Current — Continuous IC400 mAdc
Operating Junction Temperature TJ150 °C
Total Device Dissipation @ TC = 75°C (1, 2)
Derate above 75°CPD3.0
40 Watts
mW/°C
Storage Temperature Range Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 25 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) V(BR)CEO 16 Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0) V(BR)CES 36 Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) V(BR)EBO 4.0 Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C) ICES 0.1 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc) hFE 50 90 200
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz) Cob 3.5 5.0 pF
NOTES: (continued)
1. TC, Case temperature measured on collector lead immediately adjacent to body of package.
2. The MRF555 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,”
discusses methods of mounting and heatsinking.
Order this document
by MRF555/D

SEMICONDUCTOR TECHNICAL DATA
1.5 W, 470 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
CASE 317D–02, STYLE 2
Motorola, Inc. 1995
REV 7
MRF555
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
FUNCTIONAL TESTS (f = 470 MHz)
Common–Emitter Power Gain
(VCC = 12.5 Vdc, Pout = 1.5 W) Gpe 11 12.5 dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 1.5 W) ηc50 60 %
Load Mismatch Stress
(VCC = 15.5 Vdc, Pin = 125 mW,
VSWR 10:1 all phase angles)
ψNo Degradation in Output Power
Figure 1. 400512 MHz Broadband Circuit
*C1, C3, C6 — 0.811 pF Johanson
C2 — 15 pF Clamped Mica, Mini–Underwood
C4 — 36 pF Clamped Mica, Mini–Underwood
C5 — 470 pF Ceramic Chip Capacitor
C7 — 91 pF Clamped Mica, Mini–Underwood
C8 — 68 pF Clamped Mica, Mini–Underwood
C9 — 1.0 µF, 25 V Tantalum
B — Bead, Ferroxcube 56–590–65/3B
*Fixed tuned for broadband response
L1 — 5 Turns #21 AWG, 5/32 I.D.
L2, L3 — 60 x 125 x 250 Mils Copper Pad on 27 Mil Thick
L2, L3 — Alumina Substrate
L4, L5 — 7 Turns #21 AWG 5/32 I.D.
Z1 — 1.29 x 0.16 Microstrip
Z2 — 0.70 x 0.16 Microstrip
Z3 — 2.18 x 0.16 Microstrip
PCB — 1/16 Glass Teflon, 1 oz. cu. clad,
PCB — double sided, εr = 2.5
Figure 2. Performance in Broadband Circuit
RF
POWER
INPUT
RF
POWER
OUTPUT
B
D.U.T.
Z1 Z2 Z3
C1 C2 C3 C4
L2 L3
C7 L4
B
L5
C8 C9 ++
C5
C6
Gpe, POWER GAIN (dB)
c
η
, COLLECTOR
20
16
12
8
0
4
400
65
60
f, FREQUENCY (MHz)
425 450 475 500 52520
15
10
55
EFFICIENCY
%
IRL, INPUT
RETURN LOSS
(dB)
Gpe
η
c
IRL
Pout = 1.5 W
VCC = 12.5 Vdc
VCC
L1
3
MRF555MOTOROLA RF DEVICE DATA
f
Frequency
MHz
Zin
Ohms ZOL*
Ohms
f
Frequency
MHz
VCC = 7.5 V VCC = 12.5 V VCC = 7.5 V VCC = 12.5 V
f
Frequency
MHz
Pin = 100 mW Pin = 50 mW
Pout 400 MHz = 1.5 W
Pout 450 MHz = 1.35 W
Pout 512 MHz = 1.05 W
Pout 400 MHz = 1.9 W
Pout 450 MHz = 1.45 W
Pout 512 MHz = 0.9 W
400 2.9 – j2.7 1.9 – j3.1 18.0 – j13.4 12.2 – j19.7
450 2.2 – j0.8 2.6 – j4.0 21.6 = j9.9 20.2 – j18.6
512 3.5 – j1.2 2.6 – j2.6 20.1 – j1.0 23.4 – j23.0
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Table 1. Zin and ZOL versus Collector Voltage, Input Power and Output Power
MRF555
4MOTOROLA RF DEVICE DATA
Figure 3. Power Output versus Power Input Figure 4. Power Output versus Frequency
Figure 5. Power Output versus Frequency Figure 6. Power Output versus Supply Voltage
Figure 7. Power Output versus Supply Voltage Figure 8. Power Output versus Supply Voltage
P , POWER OUTPUT (W)
out
2.5
2
1.5
1
0.5
500 Pin, POWER INPUT (mW)
7.5 Vdc
VCC = 12.5 Vdc
100 150 200
P , POWER OUTPUT (W)
out
2.5
2
1.5
1
0.5
425400 f, FREQUENCY (MHz)
450 475 500 525
VCC = 7.5 Vdc
Pin = 150 mW
f = 400 MHz
100 mW
P , POWER OUTPUT (W)
out
4
3
2
1
0 0
0425400 f, FREQUENCY (MHz)
450 475 500 525
VCC = 12.5 Vdc
Pin = 150 mW
86 VCC, SUPPLY VOLTAGE (Vdc)
10 12 14 16
P , POWER OUTPUT (W)
out
4
3
2
1
0
Pin = 150 mW
86 VCC, SUPPLY VOLTAGE (Vdc)
10 12 14 16
P , POWER OUTPUT (W)
out
4
3
2
1
0
f = 450 MHz Pin = 150 mW
86 VCC, SUPPLY VOLTAGE (Vdc)
10 12 14 16
P , POWER OUTPUT (W)
out
4
3
2
1
0
f = 512 MHz
Pin = 150 mW
50 mW
100 mW
50 mW
100 mW
50 mW
100 mW
50 mW
100 mW
50 mW
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MRF555MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 317D–02
ISSUE C
STYLE 2:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION N AND R.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
C0.075 0.100 1.91 2.54
D0.033 0.039 0.84 0.99
F0.097 0.104 2.46 2.64
H0.348 0.383 8.84 9.72
J0.008 0.012 0.24 0.30
K0.285 0.320 7.24 8.12
N––– 0.065 ––– 1.65
R––– 0.128 ––– 3.25
T0.025 0.040 0.64 1.01
F
DK
H
R
A
124 3
T
SEATING
PLANE
J
C
MRF555
6MOTOROLA RF DEVICE DATA
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MRF555/D
*MRF555/D*