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MRF555MOTOROLA RF DEVICE DATA
The RF Line
Designed primarily for wideband large signal predriver stages in the UHF
frequency range.
•Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W
Common Emitter Power Gain = 12.5 dB (Typ)
Efficiency 60% (Typ)
•Cost Effective PowerMacro Package
•Electroless Tin Plated Leads for Improved Solderability
•Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 16 Vdc
Collector–Base Voltage VCBO 36 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Collector Current — Continuous IC400 mAdc
Operating Junction Temperature TJ150 °C
Total Device Dissipation @ TC = 75°C (1, 2)
Derate above 75°CPD3.0
40 Watts
mW/°C
Storage Temperature Range Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 25 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) V(BR)CEO 16 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0) V(BR)CES 36 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C) ICES — — 0.1 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc) hFE 50 90 200 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz) Cob — 3.5 5.0 pF
NOTES: (continued)
1. TC, Case temperature measured on collector lead immediately adjacent to body of package.
2. The MRF555 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,”
discusses methods of mounting and heatsinking.