01/99 B-9
2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 300 mW
Power Derating (to 175°C) 2 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
2N4117 2N4118 2N4119
At 25°C free air temperature: 2N4117A 2N4118A 2N4119A Process NJ01
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 40 – 40 – 40 V IG= – 1µA, VDS = ØV
Gate Reverse Current
2N4117, 2N4118, 2N4119 IGSS – 10 – 10 – 10 pA VGS = – 20V, VDS = ØV
2N4117A, 2N4118A, 2N4119A – 1– 1– 1pAV
GS = – 20V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.6 – 1.8 – 1 – 3 – 2 – 6 V VDS = 10V, ID= 1 nA
Drain Saturation Current (Pulsed)
2N4117, 2N4118, 2N4119 IGSS 0.03 0.09 0.08 0.24 0.2 0.6 mA VDS = 10V, VGS = ØV
2N4117A, 2N4118A, 2N4119A 0.015 0.09 0.08 0.24 0.2 0.6 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward gfs 70 210 80 250 100 330 µS VDS = 10V, VGS = ØV f = 1 kHz
Transconductance
Common Source Output Conductance gos 3 5 10 µS VDS = 10V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 333pFV
DS = 10V, VGS = ØV f = 1 MHz
Common Source Reverse Crss 1.5 1.5 1.5 pF VDS = 10V, VGS = ØV f = 1 MHz
Transfer Capacitance
¥ Audio Amplifiers
¥ Ultra-High Input Impedance
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-9
