CLF1G0035S-50,112 - NXP Semiconductors

1. Product profile

1.1 General description

CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation

GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.

[1] Pulsed RF; tp= 100 s; =10%.

[1] 2-Tone CW; f=1MHz.

CLF1G0035S-50

Broadband RF power GaN HEMT

Rev. 4 — 6 November 2014 Objective data sheet

Table 1. CW and pulsed RF application information

Typical RF performance at Tcase = 25



C; IDq = 150 mA; VDS = 50 V in a class-AB broadband demo

board.

Test sign al f PLGpD

(MHz) (W) (dB) (%)

1-To ne CW 500 50 12 64

1000 50 13 43

1500 50 13 43

2000 50 14 43

2500 50 11 48

1-Tone pulsed [1] 500 50 12 65

1000 50 15 43

1500 50 15 43

2000 50 15 44

2500 50 13 49

Table 2. 2-Tone CW application information

Typi cal 2-Tone performance at Tcase = 25



C; IDq = 275 mA; VDS = 50 V in a class-AB broadband

demo board.

Test sign al f PL(PEP) IMD3

(MHz) (W) (dBc)

2-Tone CW [1] 500 10 48

1000 10 40

1500 10 43

2000 10 38

2500 10 38

Objective data sheet Rev. 4 — 6 November 2014 2 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

1.2 Features and benefits

Frequency of operation is from DC to 3.5 GHz

50 W general purpose broadband RF Power GaN HEMT

Excellent ruggedness (VSWR 10 : 1)

High voltage operation (5 0 V)

Thermally enhanced package

1.3 Applications

Commercial wireless infrastructure (cellular, WiMAX)

Industrial, scientific, medical

Radar

Jammers

Broadband general purpose amplifier

EMC testing

Public mobile radios

Defense applic at ion

2. Pinning information

[1] Connected to flange.

3. Ordering information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1drain

2gate

3source [1]

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

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Table 4. Ordering information

Type number Package

Name Description Version

CLF1G0035S-50 - earless ceramic package; 2 leads SOT467B

Objective data sheet Rev. 4 — 6 November 2014 3 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

4. Limiting values

[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF

calculator.

5. Thermal characteristics

[1] Tj is measured via IR scan with case temperature of 85 C and power dissipation of 55 W.

6. Characteristics

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 150 V

VGS gate-source voltage 8+3 V

IGF forward gate current external RG = 5 -18mA

Tstg storage temperature 65 +150 C

Tjjunctio n te mp era t ure measured via IR scan [1] -250C

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resistance from junction to case Tj = 200 C [1] 2.1 K/W

Table 7. DC Characteristics

Tcase = 25



C; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =7 V; IDS =12 mA 150 - - V

VGS(th) gate-source threshold voltage VDS = 0.1 V; IDS = 12 mA 2.4 21.3 V

IDSX drain cut-off current VDS =10V; V

GS =3 V - 8.8 - A

gfs forward transcondu ctance VDS = 10 V; VGS =0 V - 2.0 - S

Table 8. RF Characteristics

Test signal: 1-Tone CW; RF performance at VDS =50V; I

Dq = 150 mA; f = 3 GHz; Tcase = 25



unless otherwise specified in a class-AB production circuit.

Symbol Parameter Conditions Min Typ Max Unit

Ddrain efficiency PL= 50 W 47 54 - %

Gppower gain PL= 50 W 9.8 11.5 - dB

RLin input return loss PL= 50 W - 5- dB

Objective data sheet Rev. 4 — 6 November 2014 4 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

7. Application information

7.1 Demo circuit

Fig 1. The broadband amplifier (500 MHz to 2500 MHz) demo circuit ou tline

Table 9. List of components

See Figure 1 and Figure 2

Component Description Value Remarks

A1 GaN bias module v1 - NXP

C1 multilayer ceramic chip capacitor 1.5 pF ATC 600F1R5BT

C3, C6 multilayer ceramic chip capacitor 1.2 pF ATC 600F1R2BT

C4 multilayer ceramic chip capacitor 5.6 pF ATC 60 0F5R6CT

C5 multilayer ceramic chip capacitor 2.2 pF ATC 600F2R2BT

C7 multilayer ceramic chip capacitor 0.5 pF ATC 600F0R5BT

C8 multilayer ceramic chip capacitor 20 pF ATC 600F200JT

C9 capacitor 1 pF to 4 pF Tr onser 66-0304-00004-000

C10 multilayer ceramic chip capacitor 10 nF generic

C11 multilayer ceramic chip capacitor 22 pF generic

C12 multilayer ceramic chip capacitor 1 nF generic

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Objective data sheet Rev. 4 — 6 November 2014 5 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

C13 multilayer ceramic chip capacitor 100 nF generic

C20 multilayer ceramic chip capacitor 1 nF ATC 100B102KW

C21 multilayer ceramic chip capacitor 100 pF ATC 100B101JW

C22, C26 multilayer ceramic chip capacitor 10 nF generic

C23 multilayer ceramic chip capacitor 10 F TDK C5750X7S2A106M

C25 multilayer ceramic chip capacitor 1 F generic

C27 electrolytic capacitor 470 F Panasonic EEE-TK1J471AM

E1, E2 drain voltage connection -

J1 RF in connector -

J2 RF out connector -

J3, P1 1 row , 3-way vertical DC connector

header -

L1 inductor 12.5 nH Coil craft A04T

L2 inductor 4 nH

L3 ferrite bead - Fair-Rite 2743019447

Q1 transistor - NXP CLF1G0035-50

Q2 transistor - NXP BC857B

Q3 transistor - NXP PSMN8R2-80YS

R1 resistor, 10 generic

R2 resistor 10.0 kgeneric

R3, R4 resistor 100 generic

Z1, Z2, Z3,

Z4, Z5, Z6 microstrip lines -

Table 9. List of components …continued

See Figure 1 and Figure 2

Component Description Value Remarks

Objective data sheet Rev. 4 — 6 November 2014 6 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

7.2 Application test results

[1] Pulsed RF; tp= 100 s; =10%.

See Table 9 for a list of components.

Fig 2. The broadband amplifier (500 MHz to 2500 MHz) demo circuit schematic

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Table 10. CW and pulsed RF application information

Typical RF performance at Tcase = 25



C; IDq = 150 mA; VDS = 50 V in a class-AB broadband demo

board.

Test sign al f PLGpD

(MHz) (W) (dB) (%)

1-To ne CW 500 50 12 64

1000 50 13 43

1500 50 13 43

2000 50 14 43

2500 50 11 48

1-Tone pulsed [1] 500 50 12 65

1000 50 15 43

1500 50 15 43

2000 50 15 44

2500 50 13 49

Objective data sheet Rev. 4 — 6 November 2014 7 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

[1] 2-Tone CW; f=1MHz.

7.3 Graphical data

The following figures are measured in a broadband amplifier demo board from 500 MHz

to 2500 MHz.

7.3.1 1-Tone CW RF performance

Table 11. 2-Ton e CW app lication information

Typi cal 2-Tone performance at Tcase = 25



C; IDq = 275 mA; VDS = 50 V in a class-AB broadband

demo board.

Test sign al f PL(PEP) IMD3

(MHz) (W) (dBc)

2-Tone CW [1] 500 10 48

1000 10 40

1500 10 43

2000 10 38

2500 10 38

VDS = 50 V; IDq = 150 mA; PL=50W. V

DS = 50 V; IDq = 150 mA.

(1) Gp at f = 500 MHz

(2) Gp at f = 1500 MHz

(3) Gp at f = 2500 MHz

(4) D at f = 500 MHz

(5) D at f = 1500 MHz

(6) D at f = 2500 MHz

Fig 3. Power gain and drain efficiency as function of

frequency; typical values Fig 4. Po wer gain and drain efficiency as a function

of output power; typical values

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Objective data sheet Rev. 4 — 6 November 2014 8 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

7.3.2 1-Tone pulsed RF performance

VDS = 50 V; IDq = 150 mA.

Fig 5. Power gain, linear gain and gate current as function of output power; typica l

values

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(1) Gp at f = 500 MHz

(2) Gp at f = 1500 MHz

(3) Gp at f = 2500 MHz

(4) D at f = 500 MHz

(5) D at f = 1500 MHz

(6) D at f = 2500 MHz

Fig 6. Power gain and drain efficiency as function of

frequency; typical values Fig 7. Po wer gain and drain efficiency as function of

output power; typical values

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Objective data sheet Rev. 4 — 6 November 2014 9 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

7.3.3 2-Tone CW performance

Pi = 10 dBm, VDS = 50 V; IDq = 150 mA. Pi = 10 dBm, VDS = 50 V; IDq = 150 mA.

Fig 8. Power gain as a function of frequency; typical

values Fig 9. Input retu rn loss as a function of frequency;

typical values

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(1) f = 500 MHz

(2) f = 1500 MHz

(3) f = 2500 MHz

f=1MHz; V

DS = 50 V; IDq = 275 mA.

(1) f = 500 MHz

(2) f = 1500 MHz

(3) f = 2500 MHz

Fig 10. Third-order intermodulation distortion as a

function of peak envelope power load power;

typical valu e s

Fig 11. Third-order intermodulation distortion as a

function of peak envelope power load power;

typical values

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Objective data sheet Rev. 4 — 6 November 2014 10 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

7.4 Bias module

The bias module information for the GaN HEMT amplifier is described in application note

AN11130.

8. Test information

8.1 Ruggedness in class-AB operation

The CLF1G0035S-50 is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =50V;

PL= 50 W (CW), f = 2500 MHz.

8.2 Load pull impedance information

The measured load pull impedances are shown below. Impedance reference plane

defined at devic e leads. Measureme nts perfor m ed w ith NXP te st fixtu re s. Test

temperature set at 25 C with a CW signal.

VDS = 50 V; IDq = 275 mA; PL(PEP) = 10 W.

(1) f=10 kHz

(2) f=30 kHz

(3) f = 100 kHz

(4) f = 300 kHz

(5) f=1 MHz

(6) f=3 MHz

Fig 12. Third-order intermodulation distortion as a function of frequency; typical values

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Objective data sheet Rev. 4 — 6 November 2014 11 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

ZS is the measured source pull impedance presented to the device. ZL is the measured

load pull impeda nc e pr es en te d to the de vic e.

Table 12. Typical imped ance

Typical values unless otherwise specified.

f ZSZL (maximum PL(M)) ZL (maximum D)

(MHz) () () ()

500 6.4 + 4j 9.7 + 7j 10 + 5.0j

1000 1.9 + 2.2j 9.1 + 12.4j 10 + 6.0j

2000 1.9  2.9j 5 + 4.1j 6.6 + 1.4j

2500 2.1  6.3j 3.6 + 0.75j 4.5  0.4 j

3000 2.5  9j 3.9  1.2j 5.8  1.8j

3500 2.9  14j 6.6  2j 5.8  3j

Fig 13. Definition of transist or impedance

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Objective data sheet Rev. 4 — 6 November 2014 12 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

8.3 Packaged S-parameter data

Table 13. S-parameter

Small signal; VDS = 50 V; IDq = 150 mA; ZS = ZL = 50



(MHz) S11 S21 S12 S22

Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree)

500 0.82686 168.9 9.6028 67.238 0.01482 9.5809 0.48482 133.17

600 0.82717 171.62 7.7589 61.123 0.013844 12.463 0.52053 136.01

700 0.82892 173.81 6.4386 55.547 0.01282 14.415 0.55589 138.65

800 0.83183 175.69 5.4524 50.412 0.011783 15.413 0.58964 141.17

900 0.83572 177.39 4.6934 45.655 0.010764 15.358 0.62126 143.61

1000 0.84047 178.98 4.096 41.233 0.0097946 14.091 0.65063 145.96

1100 0.84604 179.5 3.618 37.11 0.008907 11.409 0.67787 148.22

1200 0.85244 178 3.2306 33.257 0.0081421 7.0907 0.70319 150.39

1300 0.8597 176.51 2.9136 29.648 0.0075495 0.99281 0.72687 152.47

1400 0.86785 175.01 2.6525 26.259 0.0071873 6.7932 0.74919 154.47

1500 0.87697 173.47 2.4362 23.07 0.0071125 15.766 0.77044 156.39

1600 0.88715 171.88 2.2569 20.062 0.0073641 25.034 0.79086 158.24

1700 0.89848 170.23 2.1083 17.22 0.007952 33.645 0.81069 160.04

1800 0.90446 168.57 1.972 14.461 0.0088014 40.908 0.8252 161.7

1900 0.90172 166.97 1.839 11.713 0.0098257 46.58 0.83233 163.2

2000 0.89927 165.33 1.7253 9.0465 0.011062 50.849 0.83898 164.63

2100 0.89713 163.64 1.6281 6.4503 0.012486 53.942 0.84528 166

2200 0.89532 161.88 1.5454 3.9129 0.014088 56.092 0.85135 167.32

2300 0.89386 160.04 1.4755 1.4231 0.015869 57.498 0.85727 168.6

2400 0.89277 158.1 1.4171 1.0309 0.01784 58.314 0.86313 169.84

2500 0.89205 156.03 1.3692 3.4611 0.020023 58.659 0.86899 171.05

2600 0.89096 153.83 1.3297 5.8933 0.022423 58.605 0.87436 172.23

2700 0.88445 151.58 1.2888 8.4222 0.024891 58.132 0.87579 173.35

2800 0.87762 149.17 1.2551 10.982 0.027588 57.364 0.87715 174.44

2900 0.87039 146.59 1.2281 13.588 0.030547 56.329 0.87847 175.5

3000 0.86268 143.8 1.2076 16.259 0.033808 55.045 0.8798 176.54

3100 0.85434 140.75 1.1934 19.013 0.037423 53.519 0.88118 177.56

3200 0.84525 137.4 1.1855 21.877 0.041451 51.748 0.88265 178.56

3300 0.83522 133.68 1.1839 24.877 0.045967 49.721 0.88425 179.53

3400 0.82403 129.52 1.1889 28.05 0.051058 47.418 0.88607 179.52

3500 0.80856 125.24 1.1872 31.326 0.056194 44.92 0.88556 178.56

3600 0.79077 120.6 1.1867 34.765 0.061705 42.174 0.88468 177.6

3700 0.77106 115.45 1.1896 38.412 0.067742 39.146 0.88406 176.66

3800 0.74926 109.7 1.1956 42.297 0.074348 35.812 0.88382 175.74

3900 0.72527 103.23 1.2044 46.449 0.081559 32.146 0.88412 174.82

4000 0.69912 95.917 1.2152 50.902 0.089394 28.121 0.88516 173.9

4100 0.67108 87.595 1.2274 55.686 0.097849 23.71 0.88717 172.98

Objective data sheet Rev. 4 — 6 November 2014 13 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

4200 0.64183 78.092 1.24 60.826 0.10688 18.891 0.89042 172.03

4300 0.6126 67.228 1.2515 66.34 0.11639 13.65 0.89516 171.03

4400 0.58534 54.856 1.2604 72.231 0.12622 7.9864 0.90159 169.95

4500 0.5628 40.93 1.2649 78.48 0.13615 1.9193 0.90984 168.75

4600 0.54816 25.608 1.2633 85.047 0.14588 4.5074 0.91983 167.38

4700 0.54433 9.3292 1.2542 91.862 0.15511 11.224 0.9313 165.79

4800 0.55279 7.214 1.2369 98.835 0.16356 18.138 0.94381 163.95

4900 0.57293 23.266 1.2115 105.86 0.17103 25.144 0.95677 161.82

5000 0.60219 38.234 1.1791 112.84 0.17745 32.138 0.96962 159.39

5100 0.63534 51.341 1.1406 119.47 0.18272 38.825 0.9807 156.67

5200 0.66527 61.779 1.0972 125.31 0.18683 44.756 0.98704 153.74

5300 0.69493 71.079 1.0544 130.96 0.1906 50.53 0.99214 150.52

5400 0.72195 78.947 1.0134 136.23 0.19423 55.963 0.99508 147.04

5500 0.74577 85.567 0.97537 141.15 0.19795 61.088 0.99579 143.28

5600 0.76759 91.49 0.94075 146 0.20193 66.161 0.99532 139.15

5700 0.78744 96.798 0.90986 150.8 0.20632 71.236 0.99371 134.58

5800 0.80548 101.57 0.88283 155.64 0.21125 76.374 0.99093 129.47

5900 0.82197 105.86 0.85961 160.58 0.21682 81.647 0.98694 123.72

6000 0.83722 109.72 0.84 165.71 0.22309 87.14 0.98164 117.18

Table 13. S-parameter …continued

Small signal; VDS = 50 V; IDq = 150 mA; ZS = ZL = 50



(MHz) S11 S21 S12 S22

Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree)

Objective data sheet Rev. 4 — 6 November 2014 14 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

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Objective data sheet Rev. 4 — 6 November 2014 15 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

10. Handling information

10.1 ESD Sensitivity

[1] Classification 1B is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails after

exposure to an ESD pulse of 1000 V.

11. Abbreviations

12. Revision history

Table 14. ESD sensitivity

ESD model Class

Human Body Model (HBM); According JEDEC standard JESD22-A114F 1B [1]

Table 15. Abbreviations

Acronym Description

CW Continuous Wave

EMC ElectroMagnetic Compatibility

ESD ElectroStatic Discharge

GaN Gallium Nitride

HEMT High Electron Mobility Transistor

MTF Median Time to Failure

VSWR Voltage Standing-Wave Ratio

WiMAX Worldwide Interoperability for Microwave Access

Table 16. Revision history

Document ID Release date Data sheet sta tus Change notice Supersedes

CLF1G0035S-50 v.4 20141106 Objective data sheet - CLF1G0035-50_1G0035S-50

v.3

Modifications: •The document now describes only the earless version of this product:

CLF1G0035S-50.

CLF1G0035-50_1G0035S-50 v.3 20140926 Objective data sheet - CLF1G0035-50_1G0035S-50

v.2

CLF1G0035-50_1G0035S-50 v.2 20130129 Objective data sheet - CLF1G0035-50_1G0035S-50

v.1

CLF1G0035-50_1G0035S-50 v.1 20120615 Objective data sheet - -

Objective data sheet Rev. 4 — 6 November 2014 16 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificat ion — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect , incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulati ve liability toward s

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe propert y or environment al

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessa ry

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property right s.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Objective data sheet Rev. 4 — 6 November 2014 17 of 18

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neit her qualif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applicati ons.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors CLF1G0035S-50

Broadband RF power GaN HEMT

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 6 November 2014

Document identifier: CLF1G0035S-50

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 2

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Demo circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.2 Application test results . . . . . . . . . . . . . . . . . . . 6

7.3 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7

7.3.1 1-Tone CW RF performance. . . . . . . . . . . . . . . 7

7.3.2 1-To ne pulsed RF performance . . . . . . . . . . . . 8

7.3.3 2-Tone CW performance . . . . . . . . . . . . . . . . . 9

7.4 Bias module . . . . . . . . . . . . . . . . . . . . . . . . . . 10

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10

8.1 Ruggedness in class-AB operation . . . . . . . . 10

8.2 Load pull impedance information . . . . . . . . . . 10

8.3 Packaged S-parameter data. . . . . . . . . . . . . . 12

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14

10 Handling information. . . . . . . . . . . . . . . . . . . . 15

10.1 ESD Sensitivity. . . . . . . . . . . . . . . . . . . . . . . . 15

11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17

14 Contact information. . . . . . . . . . . . . . . . . . . . . 17

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

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