SPICE MODEL: MMBTA05 MMBTA06 MMBTA05 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * Epitaxial Planar Die Construction * * Ideal for Medium Power Amplification and Switching Complementary PNP Types Available (MMBTA55 / MMBTA56) SOT-23 A C Available in Lead Free/RoHS Compliant Version (Note 3) B Mechanical Data Min Max A 0.37 0.51 B 1.20 1.40 2.50 C B TOP VIEW E * * Case: SOT-23 * * * * Moisture Sensitivity: Level 1 per J-STD-020C C 2.30 G D 0.89 1.03 H E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 D E Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K Terminal Connections: See Diagram * * * * Dim J M L Terminals: Solderable per MIL-STD-202, Method 208 J 0.013 0.10 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 K 0.903 1.10 C L 0.45 0.61 MMBTA05 Marking (See Page 2): K1G, K1H M 0.085 0.180 MMBTA06 Marking (See Page 2): K1G a 0 8 B Ordering & Date Code Information: See Page 2 E All Dimensions in mm Weight: 0.008 grams (approximate) Maximum Ratings @ TA = 25C unless otherwise specified Symbol MMBTA05 MMBTA06 Unit Collector-Base Voltage Characteristic VCBO 60 80 V Collector-Emitter Voltage VCEO 60 Emitter-Base Voltage VEBO 4.0 Collector Current - Continuous (Note 1) IC 500 mA Power Dissipation (Note 1) Pd Electrical Characteristics V V 300 mW RqJA 417 K/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range 80 @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage MMBTA05 MMBTA06 V(BR)CBO 60 80 3/4 V IC = 100mA, IE = 0 Collector-Emitter Breakdown Voltage MMBTA05 MMBTA06 V(BR)CEO 60 80 3/4 V IC = 1.0mA, IB = 0 V(BR)EBO 4.0 3/4 V Emitter-Base Breakdown Voltage Collector Cutoff Current MMBTA05 MMBTA06 MMBTA05 MMBTA06 IE = 100mA, IC = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V ICBO 3/4 100 nA ICES 3/4 100 nA hFE 100 3/4 3/4 IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) 3/4 0.25 V IC = 100mA, IB = 10mA Base-Emitter Saturation Voltage VBE(SAT) 3/4 1.2 V IC = 100mA, VCE = 1.0V fT 100 3/4 MHz VCE = 2.0V, IC = 10mA, f = 100MHz Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. No purposefully added lead. DS30037 Rev. 6 - 2 1 of 3 www.diodes.com MMBTA05 / MMBTA06 a Diodes Incorporated Ordering Information (Note 4) Notes: Device Packaging Shipping MMBTA05-7 MMBTA06-7 SOT-23 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBTA06-7-F. Marking Information YM K1x = Product Type Marking Code, e.g. K1G YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K1x Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 10 VCB = 80V ICBO, COLLECTOR-BASE CURRENT (nA) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 1 0.1 0 0 25 50 75 100 125 150 175 0.01 25 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature 50 75 100 125 TA, AMBIENT TEMPERATURE (C) Fig. 2 Typical Collector-Cutoff Current vs. Ambient Temperature VCE, COLLECTOR EMITTER VOLTAGE (V) 2.0 1.8 1.6 1.4 IC = 30mA 1.2 1.0 IC = 10mA 0.8 0.6 IC = 100mA 0.4 IC = 1mA 0.2 0 0.001 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region DS30037 Rev. 6 - 2 2 of 3 www.diodes.com MMBTA05 / MMBTA06 10000 VCE = 5V IC IB = 10 0.450 0.400 hFE, DC CURRENT GAIN (NORMALIZED) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.500 0.350 0.300 TA = 25C 0.250 TA = 150C 0.200 0.150 0.100 0.050 TA = 150C 1000 100 TA = -50C 10 TA = -50C 0 10 1 1 1000 100 10 1 IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs Collector Current 1.0 1000 VCE = 5V 0.9 fT, GAIN BANDWIDTH PRODUCT (MHz) VBE(ON), BASE EMITTER VOLTAGE (V) TA = 25C 0.8 TA = -50C 0.7 TA = 25C 0.6 0.5 TA = 150C 0.4 0.3 VCE = 5V 100 10 0.2 1 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6, Base Emitter Voltage vs Collector Current DS30037 Rev. 6 - 2 3 of 3 www.diodes.com 10 1 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs Collector Current MMBTA05 / MMBTA06