MCC BD135 BD137 BD139 omponents 20736 Marilla Street Chatsworth !"# $ % !"# )HDWXUHV * * Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 (Min) @IC = 150mAdc Complementary with BD136, BD138, BD140 0D[LPXP5DWLQJV Rating Collector-Emitter Voltage Symbol BD135 BD137 BD139 Value Unit 45 60 80 VCEO TO-126 Vdc A K Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @TA=25 Derate above 25 Total Device Dissipation @TC=25 Derate above 25 Operating & Storage Temperature Range Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient Air : : : : TJ, TSTG 45 60 100 5.0 1.5 0.5 1.25 10 12.5 100 -55 to +150 R-& 10 VCBO VEBO IC IB PD PD R-$ Vdc D Vdc Adc Adc Watt mW/ Watt mW/ : : : :/W :/W 100 R E B N M F G P L H C (OHFWULFDO &KDUDFWHULVWLFV # & 8QOHVV 2WKHUZLVH 6SHFLILHG Symbol Parameter Min Max Units J 2)) &+$5$&7(5,67,&6 BVCEO ICBO IEBO hFE VCE(sat) VBE(on) Collector-Emitter Sustaining Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC=125 ) Emitter Cutoff Current (VBE=5.0Vdc, IC=0) DC Current Gain* (IC=5mAdc, VCE=2Vdc) (IC=0.5Adc, VCE=2Vdc) (IC=150mAdc, VCE=2Vdc) Collector-Emitter Saturation Voltage (IC=500mAdc, IB=50mAdc) Base-Emitter ON Voltage (VCE=2V, IC=0.5A) J Q Vdc 45 60 80 : 0.1 10 10 25 25 40 *Pulse test: Pulse width 300 sec, Duty cycle 2% Adc Adc 250 0.5 Vdc 1 Vdc ! www.mccsemi.com Revision: 2 2003/04/30 MCC BD135 BD137 BD139 IC, COLLECTOR CURRENT (AMP) 10.0 5.0 5 ms 2.0 1.0 TJ = 125C 0.5 0.1 ms 0.5 ms dc 0.1 0.05 BD135 BD137 BD139 0.02 0.01 1 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 Figure 1. Active-Region Safe Operating Area www.mccsemi.com Revision: 2 2003/04/30