BD135
BD137
BD139
Power Transistors
NPN Silicon
45,60,80 Volts
TO-126
)HDWXUHV
•
DC Current Gain - hFE = 40 (Min) @IC = 150mAdc
•
Complementary with BD136, BD138, BD140
0D[LPXP5DWLQJV
Rating Symbol Value Unit
Collector-Emitter Voltage BD135
BD137
BD139
VCEO 45
60
80
Vdc
Collector-Base Voltage BD135
BD137
BD139 VCBO 45
60
100
Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 1.5 Adc
Base Current IB 0.5 Adc
Total Device Dissipation @TA=25
:
Derate above 25
:
PD 1.25
10 Watt
mW/
:
Total Device Dissipation @TC=25
:
Derate above 25
:
PD 12.5
100 Watt
mW/
:
Operating & Storage Temperature Range TJ, TSTG -55 to +150
:
Maximum Thermal Resistance Junction to
Case R
-&
10
:
/W
Maximum Thermal Resistance Junction to
Ambient Air R
-$
100
:
/W
(OHFWULFDO&KDUDFWHULVWLFV#
°
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Symbol Parameter Min Max Units
2))&+$5$&7(5,67,&6
BVCEO Collector-Emitter Sustaining Voltage*
(IC=30mA,IB=0) BD135
BD137
BD139
45
60
80
Vdc
ICBO Collector Cutoff Current
(VCB=30Vdc, IE=0)
(VCB=30Vdc, IE=0, TC=125
:
) 0.1
10 µAdc
IEBO Emitter Cutoff Current
(VBE=5.0Vdc, IC=0) 10
µAdc
hFE DC Current Gain*
(IC=5mAdc, VCE=2Vdc)
(IC=0.5Adc, VCE=2Vdc)
(IC=150mAdc, VCE=2Vdc)
25
25
40 250
VCE(sat) Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc) 0.5 Vdc
VBE(on) Base-Emitter ON Voltage
(VCE=2V, IC=0.5A) 1 Vdc
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
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Revision: 2 2003/04/30
omponents
20736 Marilla Street Chatsworth
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MCC
BD135
BD137
BD139
10.0
1
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.01 2 5 10 20 80
BD135
BD137
BD139
50
0.1
0.05
IC, COLLECTOR CURRENT (AMP)
TJ = 125°Cdc
5 ms 0.5 ms
0.1 ms
0.02
MCC
www.mccsemi.com
Revision: 2 2003/04/30