ST700CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 910 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case TO-200AC (B-PUK) RoHS COMPLIANT * Lead (Pb)-free * Designed and qualified for industrial level TO-200AC (B-PUK) TYPICAL APPLICATIONS * DC motor controls PRODUCT SUMMARY IT(AV) * Controlled DC power supplies 910 A * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths VALUES UNITS 910 A 55 C 1857 A 25 C 50 Hz 15 700 60 Hz 16 400 50 Hz 1232 60 Hz 1125 A ITSM I2 t VDRM/VRRM Typical tq TJ kA2s 1200 to 2000 V 150 s - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER ST700C..L VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK IDRM/IRRM MAXIMUM VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM AND OFF-STATE VOLTAGE V mA V 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 Document Number: 94413 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com 80 www.vishay.com 1 ST700CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 910 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied UNITS A 55 (85) C 1857 15 700 No voltage reapplied 100 % VRRM reapplied VALUES 910 (355) 16 400 Sinusoidal half wave, initial TJ = TJ maximum 13 800 1232 1125 871 100 % VRRM reapplied 12 321 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.00 VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.13 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.40 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.35 Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.80 VTM Maximum holding current IH Typical latching current IL kA2s 795 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum on-state voltage A 13 200 600 TJ = 25 C, anode supply 12 V resistive load 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.0 Typical turn-off time tq ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 150 SYMBOL TEST CONDITIONS VALUES UNITS s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94413 Revision: 11-Aug-08 ST700CLPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 910 A TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 IGT TJ = 25 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD DC gate voltage not to trigger VGD TJ = TJ maximum A V 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode-to-cathode applied TJ = 125 C Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger MAX. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.073 DC operation double side cooled 0.031 DC operation single side cooled 0.011 DC operation double side cooled 0.006 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet C K/W 14 700 (1500) N (kg) 255 g TO-200AC (B-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.009 0.009 0.006 0.006 120 0.011 0.011 0.011 0.011 90 0.014 0.014 0.015 0.015 60 0.020 0.020 0.021 0.021 30 0.036 0.036 0.036 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 94413 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST700CLPbF Series Maximum Allowable Heatsink Temperature (C) 130 ST700C..L Series (Single Side Cooled) RthJ-hs(DC) = 0.073 K/ W 120 110 100 90 Conduction Angle 80 70 30 60 90 60 120 180 50 40 0 100 200 300 400 500 600 700 Maximum Allowable Heatsink Temperature (C) Phase Control Thyristors (Hockey PUK Version), 910 A Vishay High Power Products 130 ST700C..L Series (Double Side Cooled) RthJ-hs(DC) = 0.031 K/ W 120 110 100 90 Conduction Period 80 70 30 60 90 120 40 180 30 DC 20 0 110 100 90 Conduction Period 80 70 60 50 30 40 60 90 30 120 180 DC 20 0 200 400 600 800 Maximum Average On-state Power Loss (W) 120 ST700C..L Series (Double Side Cooled) RthJ-hs(DC) = 0.031 K/ W 120 110 100 90 Conduction Angle 80 70 60 50 30 40 60 90 120 30 180 20 0 200 400 600 800 1000 1200 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics www.vishay.com 4 1200 1600 2000 2800 180 120 90 60 30 2400 2000 RMSLimit 1600 1200 Conduction Angle 800 ST700C..L Series TJ = 125C 400 0 0 1000 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 130 800 Fig. 4 - Current Ratings Characteristics 200 400 600 800 1000 1200 Average On-state Current (A) Fig. 5 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) ST700C..L Series (Single Side Cooled ) RthJ-hs(DC) = 0.073 K/ W 400 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 130 60 50 3500 DC 180 120 90 60 30 3000 2500 2000 RMSLimit 1500 Conduction Period 1000 ST700C..L Series TJ = 125C 500 0 0 400 800 1200 1600 2000 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 94413 Revision: 11-Aug-08 ST700CLPbF Series 14000 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 910 A At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 13000 12000 11000 10000 9000 8000 ST700C..L Series 7000 16000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduc tion May Not Be Maintained. 14000 Initial TJ = 125C No Voltage Reapplied 13000 Rated VRRM Reapplied 12000 15000 11000 10000 9000 8000 7000 6000 0.01 6000 1 10 ST700C..L Series 100 0.1 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 TJ = 25C TJ = 125C 1000 ST700C..L Series 100 0.5 1 1.5 2 2.5 3 3.5 4 Transient Thermal Impedance Z thJ-hs (K/ W) Instantaneous On-state Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics 0.1 ST700C..L Series 0.01 Steady Sta te Value R thJ-hs = 0.073 K/ W (Single Side Cooled) RthJ-hs = 0.031 K/ W (Double Side Cooled) (DC Operation) 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94413 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST700CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 910 A Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp tp tp tp = 4ms = 2ms = 1ms = 0.66ms (a) (b) Tj=-40 C 1 Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 (2) (1) (3) (4) VGD IGD 0.1 0.001 Frequenc y Limited by PG(AV) Device: ST700C..L Series 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 70 0 C 20 L 1 - PbF 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - L = PUK case TO-200AC (B-PUK) 7 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 8 - Critical dV/dt: None = 500 V/s (standard selection) L = 1000 V/s (special selection) 9 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95076 For technical questions, contact: ind-modules@vishay.com Document Number: 94413 Revision: 11-Aug-08 Outline Dimensions Vishay Semiconductors TO-200AC (B-PUK) DIMENSIONS in millimeters (inches) Creepage distance: 36.33 (1.430) minimum Strike distance: 17.43 (0.686) minimum 0.7 (0.03) MIN. 34 (1.34) DIA. MAX. 2 places 27 (1.06) MAX. Pin receptacle AMP. 60598-1 0.7 (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN. 20 5 58.5 (2.3) DIA. MAX. 4.7 (0.18) 36.5 (1.44) 2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95076 Revision: 01-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000