MF70
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APPLICATIONS
Inverse Parallel Or Series Connected Diode
Power Supplies
High Frequency Applications
FEATURES
Glass Passivation
Fast Recovery Characteristics
High Voltage Capabilities
VOLTAGE RATINGS
KEY PARAMETERS
VRRM 1600V
IF(AV) 70A
IFSM 700A
Qr26µC
trr 915ns
1600
1400
1200
MF70-1600
MF70-1400
MF70-1200
Conditions
VRSM = VRRM + 100V
Type Number Repetitive Peak
Reverse Voltage
VRRM
V
Outline type code: DO5.
See Package Details for further information.
CURRENT RATINGS
Symbol Parameter Conditions UnitsMax.
IF(AV) Mean forward current
IF(RMS) RMS value
IFContinuous (direct) forward current
Half wave resistive load, Tcase = 75oC70A
T
case = 75oC 110 A
Tcase = 75oC90A
Lower voltage grades available.
For stud anode add suffix 'R' to type number.
MF70
Fast Recovery Diode
Advance Information
Replaces March 1998 version, DS4195-2.1 DS1955-3.0 January 2000
MF70
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SURGE RATINGS
Conditions Max. Units
10ms half sine; with 100% VRRM, Tj = 125oC700 A
10ms half sine; Tj = 125oC2450 A2sI2t for fusingI2t
Surge (non-repetitive) forward currentIFSM
ParameterSymbol
THERMAL AND MECHANICAL DATA
dc
Conditions Max. Units
oC/W- 0.2
Thermal resistance - case to heatsinkRth(c-h)
Thermal resistance - junction to caseRth(j-c)
Mounting torque 3.5Nm
with mounting compound
Symbol Parameter
- 0.37 oC/W
Min.
- 125 oC
˚C
125-55Storage temperature rangeTstg
Forward (conducting) - 125 oC
Tvj Virtual junction temperature Reverse (blocking)
Nm
3.83.2
- Mounting torque
CHARACTERISTICS
trr
10
Symbol Typ. Units
Parameter
VFM Forward voltage
IRM Peak reverse current
Reverse recovery time - 300 ns
At VRRM, Tcase = 100oC-mA
At 210A peak, Tcase = 25oC - 2.0 V
Conditions Max.
IF = 1A, diRR/dt = 25A/µs
Tcase = 25oC, VR = 100V
QrRecovered charge
trr Reverse recovery time
VTO Threshold voltage
rTSlope resistance
VFRM Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC80-V
At Tvj = 125oC - 3.34 m
At Tvj = 125oC - 1.3 V
- 915 ns
-26µC
I
F
= 100A, diRR/dt = 100A/µs
Tcase = 25oC, VR = 100V
Use torque wrench
MF70
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CURVES
0 1.0 2.0 3.0
Instantaneous forward voltage - (V)
0
100
200
300
400
Instantaneous forward current - (A)
500 Measured under pulse
conditions
Tj = 125˚C
Tj = 25˚C
0 400 800 1200
Rate of rise of forward current - (A/µs)
0
20
40
60
80
Transient forward voltage - (V)
T
case
= 25˚C
200 600 1000
95%
5%
Fig.1 Maximum (limit) forward characteristics Fig.2 Forward recovery voltage vs rate of rise of
forward voltage
0.001 0.01 0.1 1.0 10
Time - (s)
0
0.2
0.3
0.4
0.5
Thermal impedance - ˚C/W
d.c.
0.1
Fig.3 Maximum transient thermal impedance - junction to case
MF70
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0
4
20
12
16
40
8
Recovered charge - (µC)
1 10 100 1000
Rate of change of reverse current - (A/µs)
36
32
28
24
95%
I
F
= 50A
I
F
= 100A
T
case
= 125˚C
I
F
= 50A
I
F
= 100A
5%
0.55
0.6
0.7
0.8
0.9
1.0
Recovery time - (µs)
1 10 100 1000
Rate of rise of reverse current - (A/µs)
IF = 100A
IF = 100A
IF = 50A
Tcase = 125˚C
1.05
IF = 50A
95%
5%
10 100 1000 10000
Pulse width - (µs)
5000
1000
100
Peak current - (A)
10000
5000
2500
1000500
T
case
= 55˚
50Hz
100
300
Fig.4 Recovery time vs dIR/dt
Fig.5 Recovered charge vs dIR/dt
Fig.6 Frequency curves - square waveform
MF70
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10 100 1000 10000
Pulse width -
s
)
500
100
10
Peak current - (A)
2.0J
1.0
0.5
0.2
0.1
50Hz
100
10 100 1000 10000
Pulse width -
s
)
500
100
10
Peak current - (A)
10000
50002500
1000 500300
T
case
= 85˚
Fig.7 Frequency curves - square waveform
Fig.8 Energy per pulse - square waveform
10 100 1000 10000
Pulse width -
s
)
5000
1000
100
Peak current - (A)
10000
5000
2500
1000500
300
T
case
= 55˚
50Hz
100
Fig.9 Frequency curves - sine waveform
MF70
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10 100 1000 10000
Pulse width - (µs)
5000
1000
100
Peak current - (A)
10000
5000
2500
1000 500300
Tcase = 85˚
50Hz
100
10 100 1000 10000
Pulse width -
s
)
500
100
20
Peak current - (A)
2.0J
1.0
0.5
0.2
0.1
Fig.10 Frequency curves - sine waveform
Fig.11 Energy per pulse - sine waveform
MF70
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PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
Hex. 17.35mm AF max
2311.5
Ø4.0
Thread 1/4 in
28 UNF 2A
Weight: 20g
ASSOCIATED PUBLICATIONS
Title Application Note
Number
Calculating the junction temperature or power semiconductors AN4506
Thyristor and diode measurement with a multi-meter AN4853
Use of VTO, rT on-state characteristic AN5001
MF70
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4195-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
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Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.