ASI2010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG A The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. OD B .060 x 45 CHAMFER C E FEATURES: G L * PG = 5 dB min. at 10 W/ 2,000 MHz * Hermetic Microstrip Package * OmnigoldTM Metalization System VCC PDISS .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 35 V 35 W @ TC = 25 C O -65 C to +200 C JC O 5.0 C/W CHARACTERISTICS SYMBOL MAXIMUM .255 / 6.48 .132 / 3.35 .125 / 3.18 .110 / 2.79 .117 / 2.97 .117 / 2.97 H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 ORDER CODE: ASI10530 O TC = 25 C NONETEST CONDITIONS BVCBO IC = 5 mA BVCER IC = 15 mA BVEBO IE = 1 mA ICBO VCB = 28 V hFE VCE = 5.0 V Cob VCB = 28 V C inches / mm A G TSTG PG inches / mm F O NP MINIMUM E O I K DIM 1.5 A -65 OC to +200 OC TJ J M MAXIMUM RATINGS IC F H VCC = 28 V RBE = 10 IC = 1000 mA MINIMUM TYPICAL MAXIMUM 45 V 45 V 3.5 V 15 f = 1.0 MHz POUT = 10 W f = 2.0 GHz UNITS 5.0 mA 120 --- 7.5 pF 5.0 dB 35 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1