This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
Silicon carbide Power MOSFET 1700 V, 6 A, 1.4 Ω
(typ., TJ = 150 °C) in an HiP247™ package
Datasheet - preliminary data
Figure 1: Internal schematic diagram
Features
Very tight variation of on-resistance vs.
temperature
Slight variation of switching losses vs.
temperature
Very high operating junction temperature
capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Applications
Auxiliary power supply for server
Switch mode power supply
Description
This silicon carbide Power MOSFET is produced
exploiting the advanced, innovative properties of
wide bandgap materials. This results in
unsurpassed on-resistance per unit area and
very good switching performance almost
independent of temperature. The outstanding
thermal properties of the SiC material, combined
with the device’s housing in the proprietary
HiP247™ package, allows designers to use an
industry standard outline with significantly
improved thermal capability. These features
render the device perfectly suitable for high-
efficiency and high power density applications.
Table 1: Device summary
The device meets ECOPACK standards, an environmentally-friendly grade of products
commonly referred to as “halogen-free”. See Section 3: "Package information".
AM01475v1_noZen_noTab
D(2)
G(1)
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