559
RF (Radio Frequency) Type
[1-Channel (Form A) Type]
—Low On resistance—
mm inch
8.8±0.05
.346±.002 6.4±0.05
.252±.002
3.6±0.2
.142±.008
8.8±0.05
.346±.002 6.4±0.05
.252±.002
3.9±0.2
.154±.008
FEATURES
1. PhotoMOS rela y with high response
speed, low leakage current and low On
resistance
2. Low capacitance between output
terminals ensures high response
speed:
The capacitance between output termi-
nals is small, typically 10 pF. This enables
for a fast operation speed of 200
µ
s.
3. High sensitivity and low On resis-
tance
Maximum 0.3 A of load current can be
controlled with input current of 5 mA. The
10
(AQV225N) On resistance is less
than our conventional models. With no
metallic contacts, the PhotoMOS relay
has stable switching characteristics.
4. Low-level off state leakage current
The SSR has an off state leakage current
of se veral milliamperes, whereas the Pho-
toMOS relay has only 30 pA ev en with the
rated load voltage of 80 V (AQV225N).
5. Controls low-level analog signals
PhotoMOS relay features extremely low
closed-circuit offset voltages to enable
control of small analog signals without
distortion.
6. Low terminals electromotive force
(approx. 1
µ
V)
TYPICAL APPLICATIONS
• Measuring devices
• Scanner, IC checker, Board tester
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the package type indicator "X" and "Z" are omitted from the seal.
Type
Output rating* Part No. Packing quantity
Through hole
terminal Surface-mount terminal
Load
voltage Load
current Tube packing style Tape and reel packing style Tube Tape and reel
Picked from the
1/2/3-pin side Picked from the
4/5/6-pin side
AC/DC type 80 V 150 mA AQV225N AQV225NA AQV225NAX AQV225NAZ 1 tube contains
50 pcs.
1 batch contains
500 pcs. 1,000 pcs.
200 V 70 mA AQV227N AQV227NA AQV227NAX AQV227NAZ
400 V 50 mA AQV224N AQV224NA AQV224NAX AQV224NAZ
RATING
1. Absolute maximum ratings (Ambient temperature: 25
°
C 77
°
F)
Item Symbol Type of
connec-
tion AQV225N(A) AQV227N(A) AQV224N(A) Remarks
Input
LED forward current I
F
50 mA
LED reverse voltage V
R
3 V
Peak forward current I
FP
1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation P
in
75 mW
Output
Load voltage (peak AC) V
L
80 V 200 V 400 V
Continuous load current I
L
A 0.15 A 0.07 A 0.05 A A connection: Peak AC, DC
B, C connection: DC
B 0.20 A 0.08 A 0.06 A
C 0.30 A 0.10 A 0.08 A
Peak load current I
peak
0.45 A 0.21 A 0.15 A A connection: 100 ms (1 shot),
V
L
= DC
Power dissipation P
out
360 mW
Total power dissipation P
T
410 mW
I/O isolation voltage V
iso
1,500 V AC
Temperature
limits Operating T
opr
–40
°
C to +85
°
C –40
°
F to +185
°
FNon-condensing at low
temperatures
Storage T
stg
–40
°
C to +100
°
C –40
°
F to +212
°
F
PhotoMOS
RELAYS
AQV22
N
560
2. Electrical characteristics (Ambient temperature: 25
°
C 77
°
F)
Note: Recommendable LED forward current I
F
= 5mA
*Turn on/Turn off time
Item Symbol Type of
connec-
tion AQV225N(A) AQV227N(A) AQV224N(A) Remarks
Input
LED operate current Typical I
Fon
0.90 mA I
L
= Max.
Maximum 3.0 mA
LED turn off current Minimum I
Foff
0.4 mA I
L
= Max.
Typical 0.85 mA
LED dropout voltage Typical V
F
1.14 V (1.25 V at I
F
= 50 mA) I
F
= 5 mA
Maximum 1.5 V
Output
On resistance
Typical R
on
A7.0
30
70
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum 10
50
100
Typical R
on
B3.5
16
55
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum 5
25
70
Typical R
on
C1.8
8
28
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum 2.5
12.5
35
Output capacitance Typical C
out
10 pF I
F
= 0
V
B
= 0
f = 1 MHz
Maximum 15 pF
Off state leakage current Typical I
Leak
30 pA 30 pA 90 pA I
F
= 0
V
L
= Max.
Maximum 10 nA
Transfer
characteristics
Switching
speed
Turn on time* Typical T
on
0.20 ms I
F
= 5 mA
I
L
= Max.
Maximum 0.5 ms
Turn off time* Typical T
off
0.08 ms I
F
= 5 mA
I
L
= Max.
Maximum 0.2 ms
I/O capacitance Typical C
iso
0.8 pF f = 1 MHz
V
B
= 0
Maximum 1.5 pF
Initial I/O isolation resis-
tance Minimum R
iso
1,000 M
500 V DC
Ton
Input
Output 10%
90%
Toff
For Dimensions, see Page 441.
For Schematic and Wiring Diagrams, see Page 444.
For Cautions for Use, see Page 449.
REFERENCE DATA
1. Load current vs. ambient temperature char-
acteristics
Allowable ambient temperature: –40
°
C to +85
°
C
–40
°
F to +185
°
F
Type of connection: A
2.-(1) On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 4 and 6;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
2.-(2) On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 4 and 6;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
150
100
50
00–40 20 40 60
80 85
100–20
AQV225N
AQV227N
AQV224N
Ambient temperature, °C
Load currnt, mA
12.0
10.0
8.0
6.0
2.0
4.0
00–40 20 40 60
80 85
–20
AQV225N
Ambient temperature, °C
On resistance,
120
100
80
60
20
40
00–40 20 40 60
80 85
–20
AQV224N
AQV227N
Ambient temperature, °C
On resistance,
AQV22
N
561
3. Turn on time vs. ambient temperature char-
acteristics
Sample: AQV225N, AQV227N, AQV224N;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
4. Turn off time vs. ambient temperature char-
acteristics
Sample: AQV225N, AQV227N, AQV224N;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5. LED operate current vs. ambient tempera-
ture characteristics
Sample: AQV225N, AQV227N, AQV224N;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
1.0
0.8
0.6
0.4
0.2
00–40 20 40 60 8085–20
AQV225N
AQV227N
AQV224N
Ambient temperature, °C
Turn on time, ms
0.5
0.4
0.3
0.2
0.1
00–40 20 40 60
8085
–20
AQV225N
AQV227N
AQV224N
Ambient temperature, °C
Turn off time, ms
5
4
3
2
1
00–40 20 40 60
80 85
–20
AQV225N
AQV227N
AQV224N
Ambient temperature, °C
LED operate current, mA
6. LED turn off current vs. ambient temperature
characteristics
Sample: AQV225N, AQV227N, AQV224N;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
7. LED dropout voltage vs. ambient tempera-
ture characteristics
Sample: All types;
LED current: 5 to 50 mA
8. Voltage vs. current characteristics of output
at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25
°
C 77
°
F
5
4
3
2
1
00–40 20 40 60
8085
–20
AQV225N
AQV227N
AQV224N
Ambient temperature, °C
LED turn off current, mA
1.5
1.4
1.3
1.2
1.1
1.0
00–40 20 40 60
8085
–20
50mA
30mA
20mA
10mA
5mA
LED dropout voltage, V
Ambient temperature, °C
–4 –3 –2 –1
–150
–100
–50
150
100
50
2
AQV225N
AQV227N
AQV224N
Current, mA
Voltage, V
134
9. Off state leakage current
Sample: AQV225N, AQV227N, AQV224N;
Measured portion: between terminals 4 and 6;
Ambient temperature: 25
°
C 77°F
10. LED forward current vs. turn on time char-
acteristics
Sample: AQV225N, AQV227N, AQV224N;
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC);
Continuous load current: Max. (DC);
Ambient temperature: 25°C 77°F
11. LED forward current vs. turn off time char-
acteristics
Sample: AQV225N, AQV227N, AQV224N;
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC);
Continuous load current: Max. (DC);
Ambient temperature: 25°C 77°F
10–6
10–9
10–12
0200 300 400100
AQV225N AQV227N
AQV224N
Load voltage, V
Off state leakage current, A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
010 20 30 40 50 600
AQV225N
AQV224N·AQV227N
LED forward current, mA
Turn on time, ms
0.22
0.18
0.14
0.10
0.06
010 20 30 40 50 600
AQV225N AQV224N
AQV227N
LED forward current, mA
Turn on time, ms
12. Applied voltage vs. output capacitance
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz, 30 mVrms;
Ambient temperature: 25°C 77°F
13. Isolation characteristics
(50 impedance)
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
14. Insertion loss characteristics
(50 impedance)
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
12
10
8
6
4
2
00 20406080100
AQV225N
AQV224N
AQV227N
Applied voltage, V
Output capacitance, pF
100
80
60
40
20
0104105106107
AQV224N
AQV225N·AQV227N
Frequency, HZ
Isolation, dB
6
5
4
3
2
1
0104105106107
AQV224N
AQV227N
AQV225N
Frequency, HZ
Insertion loss, dB
9/1/2000 All Rights Reserved, © Copyright Matsushita Electric Works, Ltd.
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