Preliminary Technical Information Trench Gate Power MOSFET Die IXTD110N25T-8W VDSS = 250V N-Channel Enhancement Mode Die Outline Notes: 1. Die Thickness: 200 25 m 2. Die Size Tolerance: 50 m 3. Top Bonding Pad Metal: 30 KA nominally thick Al 4. Back Metal: 3 layers of Ti, Ni & Au; 2500A nominally thick Au 5. G = Gate, S = Source D = Drain (back side) 6. Recommend wire bonding: Gate: 1 x 200 m diameter Al wire Source: 4 x 300 m diameter Al wire 7. ESD sensitivity: Class 1C per JEDEC Standard No. 22-A114-B 8. Dice are visually inspected per IXYS Assembly Specification AS0011. Dimensions in inches [mm} Symbol Test Conditions 1 VDSS TJ = 25C to 150C Maximum Ratings VGSM ID25 TC = 25C TJM 250 V 30 V 110 A 150 C Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A, Note 1 250 VGS(th) VDS = VGS, ID = 1 mA, Note 1 2.5 IGSS V 4.5 V VGS = 20V, VDS = 0V, Note 1 200 nA IDSS VDS = VDSS , VGS = 0V, Note 1 5 A RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 2 & 4 24 m Copyright (c) 2008 IXYS CORPORATION All rights reserved DS100030(08/08) IXTD110N25T-8W Characteristic Values3 (TJ = 25C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions2 gfs VDS= 10V, ID = 0.5 * ID25, Note 4 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 65 110 S 9400 pF 851 pF 55 pF Crss td(on) Resistive Switching Times 19 ns tr VGS = 15V, VDS =0.5 * VDSS, ID = 0.5 * ID25 27 ns td(off) RG = 2 (External) 60 ns 27 ns 157 nC 40 nC 50 nC tf Qg(on) Qgs VGS= 10V, VDS = 0.5 * VDSS, ID = 25A Qgd Source-Drain Diode Characteristic Values2 (TJ = 25 C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions2 IS VGS = 0V 110 A ISM Repetitive, pulse width limited by TJM 350 A VSD IF = 55A, VGS = 0V, 1.2 V Trr IF = 55A, -di/dt = 250 A/s VR = 100 V QRM IRM 170 ns 2.3 C 27 Notes: 1. Tested 100% on wafer. 2. Not tested at the wafer level. Die must be properly attached to a suitable substrate, e.g. copper lead frame, in order to measure RDS(on). 3. The curves attached to this Data Sheet were derived using this die in the IXTH110N25T Trench Gate MOSFET package. 4. Pulse test, t 300 s, duty cycle, d 2 %. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXTD110N25T- 8W Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 250 110 VGS = 10V 8V 7V 6V 100 90 200 80 175 70 ID - Amperes ID - Amperes VGS = 10V 8V 7V 225 60 50 5.5V 40 150 125 6V 100 75 30 50 20 5V 25 5V 10 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 2.6 2 4 6 8 10 12 14 16 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature 110 20 3.0 VGS = 10V 8V 7V 100 90 2.8 VGS = 10V 2.6 ID - Amperes RDS(on) - Normalized 2.4 80 6V 70 60 50 40 5V 30 2.2 2.0 I D = 110A 1.8 1.6 I D = 55A 1.4 1.2 1.0 20 0.8 10 0.6 0.4 0 0 1 2 3 4 5 -50 6 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 150 90 3.4 VGS = 10V External Lead Current Limit 80 3.0 TJ = 125C 60 ID - Amperes RDS(on) - Normalized 70 2.6 2.2 1.8 50 40 30 1.4 TJ = 25C 1.0 20 10 0.6 0 0 20 40 60 80 100 120 140 160 180 200 220 240 260 ID - Amperes Copyright (c) 2008 IXYS CORPORATION All rights reserved -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade DS100030(08/08) IXTD110N25T-8W Fig. 8. Transconductance Fig. 7. Input Admittance 160 180 140 160 TJ = - 40C 140 g f s - Siemens ID - Amperes 120 TJ = 125C 25C - 40C 100 80 60 25C 120 100 125C 80 60 40 40 20 20 0 0 3.4 3.8 4.2 4.6 5 5.4 5.8 0 6.2 20 40 VGS - Volts 60 80 100 120 140 160 140 160 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 300 VDS = 125V 9 250 I D = 25A 8 I G = 10mA 7 VGS - Volts IS - Amperes 200 150 100 6 5 4 3 TJ = 125C TJ = 25C 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 VSD - Volts Fig. 11. Capacitance Capacitance - PicoFarads f = 1 MHz Ciss 10,000 Coss 1,000 Crss 100 10 5 10 15 20 20 40 60 80 100 QG - NanoCoulombs 100,000 0 0 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 120 IXTD110N25T- 8W Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 13. Resistive Turn-on Rise Time vs. Drain Current 29 29 RG = 2 28 28 VGS = 15V t r - Nanoseconds t r - Nanoseconds 26 25 I = 110A D 24 I D TJ = 25C 27 VDS = 125V 27 = 55A 23 26 RG = 2 25 VGS = 15V 24 VDS = 125V 23 TJ = 125C 22 22 21 21 20 25 35 45 55 65 75 85 95 105 115 125 20 30 40 50 60 TJ - Degrees Centigrade Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance 31 38 30 36 tf TJ = 125C, VGS = 15V 29 34 RG = 2, VGS = 15V VDS = 125V 28 32 I D = 110A, 55A 25 24 30 20 4 5 6 7 8 9 64 26 62 24 21 54 20 16 52 19 14 25 10 35 95 105 115 50 125 220 200 21 80 90 100 110 ID - Amperes t f - Nanoseconds 120 40 100 30 80 50 20 60 45 120 10 - Nanoseconds 140 50 d(of f ) 60 65 55 TJ = 125C 180 VDS = 125V t 23 80 I D = 55A, 110A 160 60 70 85 td(off) - - - - tf 90 - Nanoseconds TJ = 25C 60 75 70 70 TJ = 125C 50 65 100 d( of f ) 80 TJ = 25C 25 40 55 TJ = 125C, VGS = 15V 26 30 45 Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance 75 20 60 I D = 110A 56 85 VGS = 15V 27 22 66 28 18 t t f - Nanoseconds td(off) - - - - VDS = 125V 24 68 I D = 55A 30 58 90 28 70 TJ - Degrees Centigrade 30 RG = 2, 72 VDS = 125V Fig. 16. Resistive Turn-off Switching Times vs. Drain Current 29 120 74 td(off) - - - - RG - Ohms tf 110 20 22 3 100 22 23 25 - Nanoseconds 26 35 2 90 t d ( o f f ) - Nanoseconds 27 d(on) 40 t f - Nanoseconds td(on) - - - - t t r - Nanoseconds 45 80 Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature 50 tr 70 ID - Amperes 40 2 3 4 5 6 7 8 9 10 RG - Ohms Copyright (c) 2008 IXYS CORPORATION All rights reserved IXYS REF: T_110N25T(8W)8-11-08-A