Copyright © 2008 IXYS CORPORATION All rights reserved
Symbol Test Conditions 1Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VGSM ±30 V
ID25 TC= 25°C 110 A
TJM 150 °C
DS100030(08/08)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA, Note 1 250 V
VGS(th) VDS = VGS, ID = 1 mA, Note 1 2.5 4.5 V
IGSS VGS = ±20V, VDS = 0V, Note 1 ±200 nA
IDSS VDS = VDSS , VGS = 0V, Note 1 5 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 2 & 4 24 mΩ
VDSS = 250V
N-Channel Enhancement Mode
IXTD110N25T-8W
Trench Gate
Power MOSFET Die
Die Outline
Dimensions in inches [mm}
Notes:
1. Die Thickness: 200 ± 25 μm
2. Die Size Tolerance: ± 50 μm
3. Top Bonding Pad Metal:
30 KÅ nominally thick Al
4. Back Metal: 3 layers of Ti, Ni & Au;
2500Å nominally thick Au
5. G = Gate, S = Source
D = Drain (back side)
6. Recommend wire bonding:
Gate: 1 x 200 μm diameter Al wire
Source: 4 x 300 μm diameter Al wire
7. ESD sensitivity: Class 1C per
JEDEC Standard No. 22-A114-B
8. Dice are visually inspected per
IXYS Assembly Specification AS0011.
Preliminary Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTD110N25T-8W
Notes:
1. Tested 100% on wafer.
2. Not tested at the wafer level. Die must be properly attached to a suitable substrate,
e.g. copper lead frame, in order to measure RDS(on).
3. The curves attached to this Data Sheet were derived using this die in the IXTH110N25T
Trench Gate MOSFET package.
4. Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %.
Symbol Test Conditions2 Characteristic Values3
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 4 65 110 S
Ciss 9400 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 851 pF
Crss 55 pF
td(on) Resistive Switching Times 19 ns
trVGS = 15V, VDS =0.5 • VDSS, ID = 0.5 • ID25 27 ns
td(off) RG = 2Ω (External) 60 ns
tf27 ns
Qg(on) 157 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 25A 40 nC
Qgd 50 nC
Source-Drain Diode Characteristic Values2
(TJ = 25 °C, unless otherwise specified)
Symbol Test Conditions2Min. Typ. Max.
ISVGS = 0V 110 A
ISM Repetitive, pulse width limited by TJM 350 A
VSD IF = 55A, VGS = 0V, 1.2 V
Trr 170 ns
QRM 2.3 μC
IRM 27 Α
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IF = 55A,
-di/dt = 250 A/μs
VR = 100 V
Copyright © 2008 IXYS CORPORATION All rights reserved
IXTD110N25T- 8W
Fig. 1. Ou tp u t C h aracter isti cs
@ 25ºC
0
10
20
30
40
50
60
70
80
90
100
110
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6
V
DS
- Vo lts
I
D
- A mp ere s
V
GS
= 10V
8V
7V
6V
5V
5.5V
Fig. 2. Extended Ou tput Characteristics
@ 25ºC
0
25
50
75
100
125
150
175
200
225
250
0 2 4 6 8 10 12 14 16 18 20
V
DS
- Volt s
I
D
- A mp ere s
V
GS
= 10V
8V
7V
5V
6V
Fi g . 3. Outpu t Char ac ter i sti c s
@ 125ºC
0
10
20
30
40
50
60
70
80
90
100
110
0123456
V
DS
- Volt s
I
D
- Am peres
V
GS
= 10V
8V
7V
6V
5V
Fig. 4. RDS(on) Normalized to ID = 55A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N o rm a liz ed
V
GS
= 10V
I
D
= 110A
I
D
= 55A
Fig. 5. RDS(on) Normalized to ID = 55A Value
vs. Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 20 40 60 80 100 120 140 160 180 200 220 240 260
I
D
- Amperes
R
DS(on)
- N orma lize d
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maxi mum Drain Current vs.
Case Temp e r atu re
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A m peres
External Lead Cur r ent Limit
DS100030(08/08)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTD110N25T-8W
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
3.4 3.8 4.2 4.6 5 5.4 5.8 6.2
V
GS
- Volt s
I
D
- A mpe res
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160
I
D
- A mp e re s
g
f s
- S iemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Dio de
0
50
100
150
200
250
300
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
SD
- V olts
I
S
- A mp ere s
T
J
= 125ºC T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 125V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Copyright © 2008 IXYS CORPORATION All rights reserved
IXYS REF: T_110N25T(8W)8-11-08-A
IXTD110N25T- 8W
Fig. 13. Resistive Turn-on
Ri se Time vs. Dr ai n Cu r ren t
20
21
22
23
24
25
26
27
28
29
20 30 40 50 60 70 80 90 100 110 120
ID - Amp e res
t
r
- N an o se con d s
R
G
= 2Ω
V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Resistive Turn-on
Switching Times vs. Gate Resistance
20
25
30
35
40
45
50
2345678910
RG - Ohm s
t
r
- Na no seco nd s
19
20
21
22
23
24
25
26
27
28
29
30
31
t
d ( o n )
- Nan ose con d s
t
r
td(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 110A, 55A
Fig. 15. Resistive Turn-off
Swit ch i n g Ti mes vs . Ju n cti on Temp eratu r e
14
16
18
20
22
24
26
28
30
32
34
36
38
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
f
- Na no seco n ds
50
52
54
56
58
60
62
64
66
68
70
72
74
t
d ( o f f )
- Nano seco nd s
t
f
td(off)
- - - -
R
G
= 2Ω, V
GS
= 15V
V
DS
= 125V
I
D
= 55A
I
D
= 110A
Fi g. 16. R esi stive Tu r n-o ff
Swit ch i n g Ti mes vs . D r ai n C u r r en t
21
22
23
24
25
26
27
28
29
30
20 30 40 50 60 70 80 90 100 110 120
ID - Amp e res
t
f
- N a no se c on d s
45
50
55
60
65
70
75
80
85
90
t
d ( o f f )
- N a no se c on d s
t
f
td(off
)
- - - -
R
G
= 2Ω, V
GS
= 15V
V
DS
= 125V T
J
= 25ºC
T
J
= 125ºC
T
J
= 125ºC
T
J
= 25ºC
Fi g . 12. Resi stive Tu rn -o n
Ri se Ti me vs. Ju n c ti o n Temp eratu r e
21
22
23
24
25
26
27
28
29
25 35 45 55 65 75 85 95 105 115 125
TJ - Deg rees Centigrade
t
r
- N an o se con d s
R
G
= 2Ω
V
GS
= 15V
V
DS
= 125V
I
D
= 110A
I
D
= 55A
Fi g . 17. Resi stive Tu rn -o ff
Switchi n g Times vs. Gate Resistance
10
20
30
40
50
60
70
80
90
100
2345678910
RG - Oh ms
t
f
- N an o se con d s
40
60
80
100
120
140
160
180
200
220
t
d ( o f f )
- N an os eco n ds
t f
td(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V I
D
= 55A, 110A
