SPICE Device Model Si9948AEY
Vishay Siliconix
www.vishay.com Document Number: 70517
218-Apr-01
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Typical Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA2V
On-State Drain CurrentaID(on) VDS = −5 V, VGS = −10 V 30 A
VGS = −10 V, ID = −2.6 A 0.15
Drain-Source On-State ResistancearDS(on)
VGS = −4.5 V, ID = −2.1 A 0.20
Ω
Forward Transconductanceagfs VDS = −15 V, ID = −2.6 A 5.3 S
Diode Forward VoltageaVSD IS = −2 A, VGS = 0 V 0.81 V
Dynamicb
Total Gate ChargebQg9.5
Gate-Source ChargebQgs 2.5
Gate-Drain ChargebQgd
VDS = −30 V, VGS = −10 V, ID = −2.6 A
1.8
nC
Turn-On Delay Timebtd(on) 1.1
Rise Timebtr7.4
Turn-Off Delay Timebtd(off) 22
Fall Timebtf
VDD = −30 V, RL = 30 Ω
ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω
8
Source-Drain Reverse Recovery Time trr IF = −2 A, di/dt = 100 A/µs50
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.