UTC D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R206-016,B
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
*Collector current up to 5A
* D965SS : Collector-Emitter voltage up to 20 V
* D965ASS : Collector-Emitter voltage up to 30 V
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
MARKING(D965SS) MARKING(D965ASS)
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO 40 V
Collector-emitter voltage
D965SS
D965ASS
VCEO
20
30
V
Emitter-base voltage VEBO 7 V
Collector dissipation(Ta=25°C) Pc 750 mW
Collector current Ic 5 A
Junction Temperature Tj 150 °C
Storage Temperature TSTG -65 ~ +150 °C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-base breakdown voltage BVCBO Ic=100µA,IE=0 40 V
Collector-emitter breakdown voltage
D965SS
D965ASS
BVCEO Ic=1mA,IB=0
20
30
V
Emitter-base breakdown voltage BVEBO I
E=10µA,Ic=0 7 V
Collector cut-off current ICBO V
CB=10V,IE=0 100 nA
Emitter cut-off current IEBO V
EB=7V,Ic=0 100 nA
DC current gain(note) hFE V
CE=2V,Ic=1mA
VCE=2V,Ic=0.5A
VCE=2V,Ic=2A
230
150
200
800
D65
D65A
UTC D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R206-016,B
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-emitter saturation voltage VCE(sat) Ic=3A, IB= 0.1A 1 V
Current gain bandwidth product fT V
CE=6V,Ic=50mA 150 MHz
Output capacitance Cob VCB=20V,IE=0
f=1MHz
50 pF
CLASSIFICATION OF hFE2
RANK Q R S
RANGE 230-380 340-600 560-800
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic,Collector current (A)
0 0.4 0.8 1.2 1.6 2.0
0
1.0
1.5
2.0
2.5
3.0
I
B
=0.5mA
I
B
=1.0mA
I
B
=1.5mA
I
B
=2.0mA
I
B
=2.5mA
I
B
=3.0mA
Fig.2 DC current Gain
Ic,Collector current (mA)
HFE, DC current Gain
102
101
100
103
104
103
102
101
10
-1
V
CE
=2V
Fig.3 Base-Emitter on Voltage
10
1
102
103
104
Ic,Collector current (mA)
Base-Emitter voltage (V)
0 0.2 0.4 0.6 0.8 1.0
V
CE
=2V
Ic,Collector current (mA)
104
103
102
101
10
0
Saturation voltage (mV)
101
102
103
104
Fig.4 Saturation voltage Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
100101102
103
Current Gain-bandwidth
product,f T(MHz)
100
101
102
V
CE
=6V
Collector-Base voltage (V)
Cob,Capacitance (pF)
103
103
100
101
102
10-1 100101102
f=1MHz
I
E
=0
