FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. * Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely low RDS(ON) Applications * SC70-60 package: small footprint (51% smaller than * DC/DC converter * Load switch * LCD display inverter SSOT-6); low profile (1mm thick) S G D D 1 6 2 5 3 4 G Pin 1 S SC70-6 Complementary Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Q1 Q2 Units VDSS Drain-Source Voltage Parameter 20 -20 V VGSS Gate-Source Voltage 12 12 V ID Drain Current 0.7 -0.6 A PD Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range - Continuous (Note 1) - Pulsed 2.1 (Note 1) -2 0.3 W -55 to +150 C 415 C/W Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .32 FDC6332C 7'' 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDC6332C Rev B(W) FDG6332C October 2001 PRELIMINARY Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage BVDSS TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF /IGSSR Gate-Body Leakage, Forward IGSSF /IGSSR Gate-Body Leakage, Reverse On Characteristics VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A,Ref. to 25C ID = -250 A,Ref. to 25C VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = 12V , VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 20 -20 V 14 -14 mV/C 1 -1 100 100 A V (Note 2) Gate Threshold Voltage Q1 VDS = VGS, ID = 250 A 0.6 1.1 1.5 VDS = VGS, ID = -250 A -0.6 -1.5 VGS(th) TJ Gate Threshold Voltage Temperature Coefficient Q2 Q1 Q2 RDS(on) Static Drain-Source On-Resistance VGS(th) gFS ID(on) nA nA Q2 VGS = -4.5 V, ID = -0.6 A VGS = -2.5 V, ID = -0.5 A VGS=-4.5 V, ID =-0.6 A,TJ=125C -1.2 -2.8 3 180 293 247 300 470 400 Q1 VDS = 5 V ID = 0.7 A 2.8 Q2 VDS = -5 V ID = -0.6A 1.8 Q1 VGS = 4.5 V, VDS = 5 V Q2 VGS = -4.5 V, VDS = -5 V Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 113 Q2 VDS=-10 V, V GS= 0 V, f=1.0MHz 114 Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 34 Q2 VDS=-10 V, V GS= 0 V, f=1.0MHz 24 VDS=10 V, V GS= 0 V, f=1.0MHz 16 Q2 VDS=-10 V, V GS= 0 V, f=1.0MHz 9 Q1 For Q1: VDS =10 V, VGS= 4.5 V, Q1 Forward Transconductance On-State Drain Current ID = 250 A,Ref. To 25C ID = -250 A,Ref. to 25C VGS = 4.5 V, ID =0.7 A VGS = 2.5 V, ID =0.6 A VGS = 4.5 V, ID =0.7A,TJ=125C mV/C 300 400 442 m 420 630 700 S 1 A -2 Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Q1 Switching Characteristics td(on) Turn-On Delay Time td(off) Turn-On Rise Time Q1 Turn-Off Delay Time Q2 Q1 Q2 tf Qg Qgs Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge pF I D= 1 A RGEN = 6 For Q2: VDS =-10 V, I D= -1 A VGS= -4.5 V, RGEN = 6 5 10 5.5 11 7 14 15 25 ns 9 18 ns 6 12 ns Q1 1.5 3 ns Q2 1.7 1.1 3.4 1.5 nC 1.4 2 Q1 Q2 Q1 Q2 Qgd pF (Note 2) Q2 tr pF Q1 Q2 For Q1: VDS =10 V, VGS= 4.5 V, For Q2: VDS =-10 V, VGS= -4.5 V, I D= 0.7 A RGEN = 6 I D= -0.6 A RGEN = 6 0.24 nC 0.3 0.3 0.4 nC FDG6332C Rev B(W) FDG6332C Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Q1 0.25 Q2 -0.25 Q1 VGS = 0 V, IS = 0.25 A (Note 2) 0.74 1.2 Q2 VGS = 0 V, IS = -0.25 A (Note 2) -0.77 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. RJA = 415C/W when mounted on a minimum pad of FR-4 PCB in a still air environment. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDG6332C Rev B(W) FDG6332C Electrical Characteristics FDG6332C Typical Characteristics: N-Channel 1.8 4 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS=4.5V 3.5V 2.5V 3 2 2.0V 1 1.6 VGS = 2.5V 1.4 3.0V 1.2 3.5V 4.0V 0.8 0 0 1 2 3 0 4 1 Figure 1. On-Region Characteristics. 3 4 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.8 1.6 ID =0.7A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 I D, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 ID =0.4A 0.6 TA = 125oC 0.4 TA = 25oC 0.2 0 0.6 -50 -25 0 25 50 75 100 125 1 150 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 2.5 2 VGS = 0V 25oC IS, REVERSE DRAIN CURRENT (A) o TA = -55 C VDS = 5V I D, DRAIN CURRENT (A) 4.5V 1 125oC 1.5 1 0.5 1 TA = 125o C 25 oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6332C Rev B(W) FDG6332C Typical Characteristics: N-Channel 200 VDS = 5V ID = 0.7A f = 1MHz VGS = 0 V 10V 4 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 150 CISS 100 COSS 50 1 CRSS 0 0 0 0.4 0.8 1.2 0 1.6 Figure 7. Gate Charge Characteristics. 10 15 20 Figure 8. Capacitance Characteristics. 10 10 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE (nC) 100s 1ms 1 10ms 100ms 1s VGS = 4.5V SINGLE PULSE RJA = 415oC/W 0.1 DC TA = 25oC 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 100 SINGLE PULSE RJA = 415C/W TA = 25C 8 6 4 2 0 0.001 0.01 0.1 1 10 100 t 1, TIME (sec) Figure 10. Single Pulse Maximum Power Dissipation. FDG6332C Rev B(W) FDG6332C Typical Characteristics: P-Channel 2 1.8 VGS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V -ID, DRAIN CURRENT (A) -3.5V 1.6 -2.5V 1.2 0.8 -2.0V 0.4 VGS = -2.5V 1.6 1.4 -3.0V 1.2 -3.5V -4.0V -4.5V 1 0.8 0 0 1 2 3 0 4 0.5 Figure 11. On-Region Characteristics. 2 1.2 ID = -0.6A VGS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 1.2 1.1 1 0.9 0.8 ID = -0.3 A 1 0.8 TA = 125oC 0.6 TA = 25o C 0.4 0.2 0.7 -50 -25 0 25 50 75 100 125 1 150 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 10 2 TA = -55 oC VGS = 0V 25oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V o -ID, DRAIN CURRENT (A) 1 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) 125 C 1.5 1 0.5 1 o TA = 125 C 0.1 o 25 C 0.01 -55oC 0.001 0.0001 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6332C Rev B(W) FDG6332C Typical Characteristics: P-Channel 160 ID = -0.6A VDS = -5V f = 1MHz VGS = 0 V -10V 4 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 120 CISS 80 COSS 40 1 CRSS 0 0 0 0.3 0.6 0.9 1.2 1.5 0 1.8 5 Figure 17. Gate Charge Characteristics. 15 20 Figure 18. Capacitance Characteristics. 10 10 100s RDS(ON) LIMIT 10ms 100ms 1s VGS = -4.5V SINGLE PULSE RJA = 415 oC/W DC 6 4 2 TA = 25oC 0.01 0.1 o TA = 25 C 1ms 1 0.1 SINGLE PULSE o RJA = 415 C/W 8 POWER (W) -ID, DRAIN CURRENT (A) 10 -V DS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 100 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA RJA = 415 C/W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 t2 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 t1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. FDG6332C Rev B(W) SC70-6 Tape and Reel Data SC70-6 Packaging Configuration: Figure 1.0 Packaging Description: Customized Label SC70-6 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. Antistatic Cover Tape These full reels are individually barcode labeled and placed inside a pizza box (illustrated in figure 1.0) made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains five reels maximum. And these pizza boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. F63TNR Static Dissipative Label Embossed Carrier Tape 21 21 21 21 21 Pin 1 SC70-6 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Standard (no flow code) TNR D87Z 10,000 7" Dia 13" 193x183x80 355x333x40 Max qty per Box 15,000 30,000 Weight per unit (gm) 0.0055 0.0055 Weight per Reel (kg) 0.1140 0.3960 Box Dimension (mm) SC70-6 Unit Orientation TNR 3,000 Barcode Label Note/Comments Barcode Label 355mm x 333mm x 40mm Intermediate container for 13" reel option Barcode Label Barcode Label sample 193mm x 183mm x 80mm Pizza Box for Standard Option LOT: CBVK741B019 QTY: 3000 FSID: FDG6302P SPEC: CBVK741B019 fdg6302p 3000 D/C1: D9842AB QTY1: SPEC REV: D/C2: QTY2: CPN: FAIRCHILD SEMICONDUCTOR CORPORATION (F63TNR) SC70-6 Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape Cover Tape Components Tr ailer Ta pe 300mm minimum or 75 empty pockets (c)2001 Fairchild Semiconductor Corporation Leader Tape 500mm minimum or 125 empty pockets June 2001, Rev. D SC70-6 Tape and Reel Data, continued SC70-6 Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SC70-6 (8mm) 2.24 +/-0.10 2.34 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.20 +/-0.10 0.255 +/-0.150 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 5.2 +/-0.3 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SC70-6 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 8mm 7" Dia 7.00 177.8 0.059 1.5 0.512 +0.020/-0.008 13 +0.5/-0.2 Dim C 0.795 20.2 Dim D 2.165 55 Dim N 0.331 +0.059/-0.000 8.4 +1.5/0 Dim W1 Dim W2 0.567 14.4 0.311 - 0.429 7.9 - 10.9 Dim W3 (LSL-USL) 8mm 13" Dia 13.00 330 0.059 1.5 0.512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10.9 July 1999, Rev. C SC70-6 Package Dimensions SC70-6 (FS PKG Code 76) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0055 (c)2000 Fairchild Semiconductor International March 2000, Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4