October 2001
PRELIMINARY
2001 Fairchild Semiconductor Corporation FDC6332C Rev B(W)
FDG6332C
20V N & P-Channel PowerTrench MOSFETs
General Description
The N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
TSSOP-8 and SSOP-6 packages are impractical.
Applications
• DC/DC converter
• Load switch
• LCD display inverter
Features
• Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V
RDS(ON) = 400 mΩ @ VGS = 2.5 V
• Q2 –0.6 A, –20V. RDS(ON) = 420 mΩ @ VGS = –4.5 V
RDS(ON) = 630 mΩ @ VGS = –2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• SC70-60 package: small footprint (51% smaller than
SSOT-6); low profile (1mm thick)
SGD
DGS
Pin 1
SC70-6 Complementary
6
5
43
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Q1 Q2 Units
VDSS Drain-Source Voltage 20 –20 V
VGSS Gate-Source Voltage ±12 ±12 V
IDDrain Current – Continuous (Note 1) 0.7 –0.6 A
– Pulsed 2.1 –2
PDPower Dissipation for Single Operation (Note 1) 0.3 W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.32 FDC6332C 7’’ 8mm 3000 units
FDG6332C
FDG6332C Rev B(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA
V
GS
= 0 V, I
D
= –250 µAQ1
Q2 20
–20 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA,Ref. to 25°C
ID = –250 µA,Ref. to 25°CQ1
Q2 14
–14 mV/°C
IDSS Zero Gate Voltage Drain Current V
DS
= 16 V, V
GS
= 0 V
V
DS
= –16 V, V
GS
= 0 V Q1
Q2 1
–1 µA
I
GSSF
/I
GSSR
Gate–Body Leakage, Forward VGS = ± 12 V, VDS = 0 V ±100 nA
I
GSSF
/I
GSSR
Gate–Body Leakage, Reverse VGS = ± 12V , VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th)Q1 VDS = VGS, ID = 250 µA0.6 1.1 1.5Gate Threshold Voltage
Q2 VDS = VGS, ID = –250 µA-0.6 –1.2 –1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient Q1
Q2 ID = 250 µA,Ref. To 25°C
ID = –250 µA,Ref. to 25°C–2.8
3mV/°C
RDS(on) Q1 VGS = 4.5 V, ID =0.7 A
VGS = 2.5 V, ID =0.6 A
VGS = 4.5 V, ID =0.7A,TJ=125°C
180
293
247
300
400
442
Static Drain–Source
On–Resistance
Q2 VGS = –4.5 V, ID = –0.6 A
VGS = –2.5 V, ID = –0.5 A
VGS=–4.5 V, ID =–0.6 A,TJ=125°C
300
470
400
420
630
700
mΩ
gFS Q1 VDS = 5 V ID = 0.7 A 2.8
Forward Transconductance
Q2 VDS = –5 V ID = –0.6A 1.8 S
ID(on) Q1 VGS = 4.5 V, VDS = 5 V 1On–State Drain Current
Q2 VGS = –4.5 V, VDS = –5 V –2 A
Dynamic Characteristics
Ciss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 113
Input Capacitance Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 114 pF
Coss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 34Output Capacitance
Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 24 pF
Crss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 16Reverse Transfer Capacitance
Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 9pF
Switching Characteristics (Note 2)
td(on) Q1 5 10
Turn–On Delay Time Q2 5.5 11 ns
trQ1 7 15
Turn–On Rise Time Q2 14 25 ns
td(off) Q1 9 18
Turn–Off Delay Time Q2 6 12 ns
tfQ1 1.5 3
Turn–Off Fall Time Q2
For Q1:
VDS =10 V, I D= 1 A
VGS= 4.5 V, RGEN = 6 Ω
For Q2:
VDS =–10 V, I D= –1 A
VGS= –4.5 V, RGEN = 6 Ω
1.7 3.4 ns
QgQ1 1.1 1.5
Total Gate Charge Q2 1.4 2nC
Qgs Q1 0.24
Gate–Source Charge Q2 0.3 nC
Qgd Q1 0.3
Gate–Drain Charge Q2
For Q1:
VDS =10 V, I D= 0.7 A
VGS= 4.5 V, RGEN = 6 Ω
For Q2:
VDS =–10 V, I D= –0.6 A
VGS= –4.5 V, RGEN = 6 Ω0.4 nC
FDG6332C
FDG6332C Rev B(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
ISQ1 0.25
Maximum Continuous Drain–Source Diode Forward Current Q2 –0.25 A
VSD Q1 VGS = 0 V, IS = 0.25 A (Note 2) 0.74 1.2
Drain–Source Diode Forward
Voltage Q2 VGS = 0 V, IS = –0.25 A (Note 2) –0.77 –1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad of FR-4
PCB in a still air environment.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG6332C
FDG6332C Rev B(W)
Typical Characteristics: N-Channel
0
1
2
3
4
01234
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
2.0V
3.0V
VGS=4.5V
2.5V
3.5V
0.8
1
1.2
1.4
1.6
1.8
0 1 2 3 4
ID, DRAIN CURRENT (A)
R
DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 2.5V
3.0V
4.0V
3.5V
4.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 025 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID =0.7A
VGS = 4.5V
0
0.2
0.4
0.6
0.8
1 2 3 4 5
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID =0.4A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.5
1
1.5
2
2.5
0.5 11.5 22.5 3
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC25oC
125oC
VDS = 5V
0.0001
0.001
0.01
0.1
1
10
00.2 0.4 0.6 0.8 11.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG6332C
FDG6332C Rev B(W)
Typical Characteristics: N-Channel
0
1
2
3
4
5
00.4 0.8 1.2 1.6
Qg, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
ID = 0.7A VDS = 5V
15V
10V
0
50
100
150
200
0 5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
0.1 110 100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC 1s
100ms
100µs
RDS(ON) LIMIT
VGS = 4.5V
SINGLE PULSE
RθJA = 415oC/W
TA = 25oC
10ms
1ms
0
2
4
6
8
10
0.001 0.01 0.1 110 100
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 415°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
FDG6332C
FDG6332C Rev B(W)
Typical Characteristics: P-Channel
0
0.4
0.8
1.2
1.6
2
01234
-VDS, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
-3.5V -2.5V
-2.0V
VGS = -4.5V -3.0V
0.8
1
1.2
1.4
1.6
1.8
00.5 11.5 2
-ID, DRAIN CURRENT (A)
R
DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -2.5V
-3.0V
-3.5V
-4.5V
-4.0V
Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-50 -25 025 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -0.6A
VGS = -4.5V
0.2
0.4
0.6
0.8
1
1.2
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
ID = -0.3 A
TA = 125oC
TA = 25oC
Figure 13. On-Resistance Variation with
Temperature. Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.5
1
1.5
2
0.5 11.5 22.5 3
-VGS, GATE TO SOURCE VOLTAGE (V)
D
TA = -55oC25oC
125oC
VDS = -5V
0.0001
0.001
0.01
0.1
1
10
00.2 0.4 0.6 0.8 11.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG6332C
FDG6332C Rev B(W)
Typical Characteristics: P-Channel
0
1
2
3
4
5
00.3 0.6 0.9 1.2 1.5 1.8
Qg, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
ID = -0.6A VDS = -5V
-15V
-10V
0
40
80
120
160
0 5 10 15 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.
0.01
0.1
1
10
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC1s
100ms
10ms
1ms100µs
RDS(ON) LIMIT
VGS = -4.5V
SINGLE PULSE
RθJA = 415oC/W
TA = 25oC
0
2
4
6
8
10
0.001 0.01 0.1 1 10 100
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
RθJA = 415oC/W
TA = 25oC
Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 110 100
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
RθJA(t) = r(t) * RθJA
RθJA = 415 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDG6332C
SC70-6 Unit Orientation
SC70-6 Packaging
Configuration: Figure 1.0
Components Leader Tape
500mm minimum or
125 empty pockets
Tr ailer Ta pe
300mm minimum or
75 empt y pock ets
SC70-6 Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
S C 70- 6 Packaging Information
Standard
(no flow code) D87Z
Packaging type
Reel Size
TNR
7” Dia
TNR
13”
Qty pe r Reel/Tube/Bag 3,000 10,000
Box Dimension
(mm) 193x183x80 355x333x40
Max qty per Box 15,000 30,000
Weight per unit (gm) 0.0055 0.0055
Weig ht per Reel (kg) 0.1140 0.3960
F63TNR
Label
Customi zed Label
Antis t atic Cover Tape
21 21 21 21
21
Pi n 1
Barcode L abel sample
LOT: CBVK741B019
FSID: FDG6302P
D/C1: D9842AB QTY1: SPEC REV:
SPEC:
QTY: 3000
D/C2: QTY2: CPN:
3000
CBVK741B019
FAIRCHILD SEMICONDUCTOR CORPORATION (F63TNR)
fdg6302p
Packaging Description:
SC70-6 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of pol yester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7” or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). O ther option com es in 10,000 units per 13”
or 330cm diameter reel. Thi s and some other options are
described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a pizza box (illustrated in figure 1.0) made of
recyclable corrugated brown paper with a Fairchild logo
printing. One pizza box contains five reels maximum. And
these pizza boxes are placed inside a barcode labeled
shipping box which comes in different sizes depending on
the number of parts shipped.
Static Dissi pat i ve
Emboss ed Carrier Tape
Barcode
Label
Barcode L abel
355mm
x
333mm
x
40mm
Intermediate container for 13” reel
option
193mm x 183mm x 80mm
Pizza Box for Standard Option
Barcode
Label
SC70-6 Tape and Reel Data
June 2001, Rev. D
©2001 Fairchild Semiconductor Corporation
SC70-6 Tape and Reel Data, continued
July 1999, Rev . C
P1
A0 D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size Reel
Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
8mm 7" Dia 7.00
177.8 0.059
1.5 0.512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 2.165
55 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 10.9
8m m 13" Dia 13.00
330 0.059
1.5 0.512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 4.00
100 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 10.9
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Opti on
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or F ront Sectional View)
Component Rotation
User D ire c tion of Feed
SC70-6 Embossed Carrier Tape
Configuration: Figure 3.0
SC70-6 Reel Configuration: Figure 4.0
Dimensions are in millimeter
Pkg type
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
SC70-6
(8mm)
2.24
+/-0.10 2.34
+/-0.10 8.0
+/-0.3 1.55
+/-0.05 1.125
+/-0.125 1.75
+/-0.10 6.25
min 3.50
+/-0.05 4.0
+/-0.1 4.0
+/-0.1 1.20
+/-0.10 0.255
+/-0.150 5.2
+/-0.3 0.06
+/-0.02
SC70-6 (FS PKG Code 76)
SC70-6 Package Dimensions
March 2000, Rev . B
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Par t Weight per unit (gram): 0.0055
©2000 Fairchild Semiconductor International
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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FASTr™
FRFET™
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GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
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DOME™
EcoSPARK™
E2CMOSTM
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STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
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STAR*POWER is used under license
VCX™