2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–72 March 17, 2000-13
• FEATURES
• High Current Transfer Ratio
CNY17F-1, 40-80%
CNY17F-2, 63-125%
CNY17F-3, 100-200%
CNY17F-4, 160-320%
• Breakdown Voltage, 5300 V
RMS
• High Collector-Emitter Voltage
•
V
CEO
=70 V
• No Base Terminal Connection for Improved
Common Mode Interface Immunity
• Field-Effect Stable by TRIOS—TRansparent
IOn Shield
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Underwriters Lab File #E52744
• VDE #0884, Available with Option 1
Maximum Ratings
T
A
=25
°
C
Emitter
Reverse Voltage ............................................... 6.0 V
DC Forward Current ...................................... 60 mA
Surge Forward Current (t
≤
10
µ
s)..................... 2.5 A
Total Power Dissipation ............................... 100 mW
Detector
Collector-Emitter Breakdown Voltage................ 70 V
Collector Current ............................................50 mA
Collector Current (t
≤
1.0 ms) ......................... 100 mA
Total Power Dissipation ............................... 150 mW
Package
Isolation Test Voltage (between emitter
and detector referred to standard
climate 23/50 DIN 50014).................... 5300 V
RMS
Creepage ..................................................
≥
7.0 mm
Clearance..................................................
≥
7.0 mm
Isolation Thickness between Emitter
and Detector..........................................
≥
0.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1 ....................... 175
Isolation Resistance (
V
IO
=500 V) ...............
≥
10
11
Ω
Storage Temperature Range ............. –55 to +150
°
C
Ambient Temperature Range ............ –55 to +100
°
C
Junction Temperature..................................... 100
°
C
Soldering Temperature
(max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm) ........... 260
°
C
V
DE
DESCRIPTION
The CNY17F is an optocoupler consisting of a Gallium Arsenide infrared
emitting diode optically coupled to a silicon planar phototransistor detec-
tor in a plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission between two electrically
separated circuits. The potential difference between the circuits to be coupled
is not allowed to exceed the maximum permissible reference voltages.
In contrast to the CNY17 Series, the base terminal of the F type is not con-
nected, resulting in a substantially improved common-mode interference
immunity.
Characteristics
T
A
=25
°
C
Parameter Symbol Value Unit Condition
Emitter
Forward Voltage
V
F
1.25 (
≤
1.65) V
I
F
=60 mA
Breakdown Voltage
V
BR
≥
6.0
I
R
=10
µ
A
Reverse Current
I
R
0.01 (
≤
10)
µ
A
V
R
=6.0 V
Capacitance
C
O
25 pF
V
R
=0 V, f=1.0 MHz
Thermal Resistance
R
thJA
750 K/W —
Detector
Capacitance
C
CE
5.2 pF
V
CE
=5.0 V,
f=1.0 MHz
C
BC
6.5
C
EB
7.5
Thermal Resistance
R
thJA
500 K/W —
Package
Saturation Voltage,
Collector-Emitter
V
CEsat
0.25 (
≤
0.4) V
I
F
=10 mA
I
C
=2.5 mA
Coupling
Capacitance
C
C
0.6 pF —
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ.
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
Dimensions in inches (mm)
CNY17F
No Base Connection
Phototransistor Optocoupler
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA CNY17F
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–73 March 17, 2000-13
Figure 3. Current transfer ratio versus diode
current
(
T
A
=–25
°
C,
V
CE
=5.0 V)
I
C
/
I
F
=f (
I
F
)
Figure 4. Current transfer ratio versus diode
current
(
T
A
=0
°
C,
V
CE
=5.0 V)
I
C
/
I
F
=f (
I
F
)
Figure 5. Current transfer ratio versus diode
current
(
T
A
=25
°
C,
V
CE
=5.0 V)
I
C
/
I
F
=f (
I
F
)
1
2
3
4
1
2
3
4
1
2
3
4
Current Transfer Ratio
I
C
/
I
F
at
V
CE
=5.0 V, 25
°
C
and Collector-Emitter Leakage Current by dash number
Figure 1. Linear operation
(without saturation)
I
F
=10 mA,
V
CC
=5.0 V,
T
A
=25
°
C
Figure 2. Switching operation
(with saturation)
-1 -2 -3 -4 Unit
I
C
/
I
F
at
V
CE
=5.0 V
(
I
F
=10 mA)
40–80 63-125 100–200 160–320 %
I
C
/
I
F
at
V
CE
=5.0 V
(
I
F
=1.0 mA)
30 (>13) 45 (>22) 70 (>34) 90 (>56)
Collector-Emitter
Leakage Current
(
V
CE=10 V) (ICEO)
2.0 (≤ 50) 2.0 (≤ 50) 5.0 (≤ 100) nA
Load Resistance RL75 W
Turn-On Time tON 3.0 µs
Rise Time tr2.0
Turn-Off Time tOFF 2.3
Fall Time tf2.0
Cut-Off Frequency fCO 250 kHz
-1
(IF=20 mA)
-2 and -3
(IF=10 mA)
-4
(IF=5.0 mA)
Turn-On Time tON 3.0 4.2 6.0 µs
Rise Time tr 2.0 3.0 4.6
Turn-Off Time tOFF 18 23 25
Fall Time tf 11 14 15
IF
IC
RL=75 Ω
VCC=5 V
45 Ω
IF1 K Ω
VCC=5 V
47 Ω
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA CNY17F
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–74 March 17, 2000-13
Figure 12. Saturation voltage current
and modulation CNY17F-1
VCEsat=f (IC) (TA=25°C)
Figure 13. Saturation voltage versus
collector current and modulation depth
CNY17F-2 VCEsat=f (IC) (TA=25°C)
Figure 14. Saturation voltage versus
collector current and modulation depth
CNY17F-3 VCEsat=f (IC) (TA=25°C)
Figure 9. Output characteristics
CNY17F-2, -3 (TA=25°C) IC=f(VCE)
Figure 10. Forward voltage VF=f(IF)
Figure 11. Collector emitter off-state
current ICEO=f(V,T) (TA=75°C, IF=0)
Figure 6. Current transfer ratio versus
diode current (TA=50°C) VCE=5.0 V
Figure 7. Current transfer ratio versus
diode current (TA=75°C) VCE=5.0 V
Figure 8. Current transfer ratio versus
temperature (IF=10 mA, VCE=5.0 V)
IC/IF=f (T)
1
2
3
4
1
2
3
4
4
3
2
1
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA CNY17F
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–75 March 17, 2000-13
Figure 19. Transistor capacitance
C=f(VO)(TA=25°C, f=1.0 MHz)
Figure 17. Permissible power dissipa-
tion transistor and diode Ptot=f(TA)
Figure 18. Permissible forward current
diode IF=f(TA)
Figure 15. Saturation voltage versus
collector current and modulation depth
CNY17F-4 VCEsat=f (IC) (TA=25°C)
Figure 16. Permissible pulse load
D=parameter, TA=25°C, IF=f(tp)
