-- MOTOROU SEMICONDUCTOR Order this document by MAC223FP/D TECHNICAL DATA MAC223FP Series MAC223AFP Series..:;,:, *..\\,,,~' +,. ,*$ .$ a Wiacs Silicon Bidirectional Triode Thyristors primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full-wave silicongatecontrolled devices are needed. . . . designed . Off-State Voltages to 800 Volts All Diffused and Glass Passivated Junctions for Parameter Uniformity and SWlity Small, Rugged Thermowati Construction for Thermal Resistance and High Heat Dissipation Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or Four Modes (MAC223AFP Series) E ...!, ,<* ,,J$*.>$, ~*$*.,": iSOLAT@@i@h#s TH~@~~~S 25 W~ES RMS ~@@:k600 VOLTS C*$,.{,3' .,'. ~~@! ! FZ -f , {" `$?':+ . .- -- . .-, ---- -y-l ., ` `$* `" MAC223-4FP, MAC223A4FP MA@23-#P, MAC223A6FP Mh*3-8FP$ MAC223A8FP o +3+W2'%-I Peak Gate Voltag~t@~,$2 ~) = 25C, Relative Humidity < 20Y0) ., .,, Operating ~~o}~emperature Stor~<%p&rature Range :. W:&Q&korque 200 400 600 OFP,MAC223A1OFP On-State RMS Current flc = +80C) Full Cyclqi@~~''~ve 50 to 60 Hz(2) , Peak Nonrepetitive Surge Current (One Full %~:d Hz, Tc = 80C, G?t?:, .:,<* preceded and followed by rated curre~~ $$~. J.:iit$. ,, `$,~w, ~{ Grcuit Fusing (t = 8.3 ms) ,*,,,t\, . >K*,>,,1,. RMS lsolatioql~~&~A I STYLE 3 .~&f" 800 IT(RMS) 25 Amps lTSM 250 Amps 12t 260 A2s PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amps VGM *1 o volts 1500 volts ` V(lso) TJ 40 to +125 "c Tstg -- 40 to +150 "c 8 in. lb, l$~~~fi for all types can be applied on a continuous basis. BlocKng voltages shall not be tested with a constant current source such that the `Q$t<0~a9e ratings of the devices are exceeded. $$. Thecasetemperature reference point forallTC measurements is a point on the center lead of the package as close as possible to the plastic body. THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Case RgJC 1.2 `CM Thermal Resistance, Case to Sink ReCS 2.2 `cm Thermal Resistance, Junction to Ambient RgJA 60 `cm @ Motorola,Inc. 1995 Unit MOTOROLA @ , MAC223FP Series MAC223AFP Series ELECTRICAL CHARACTERISTICS UC= 25C and either polarity . . of MT2 to MT1 voltaae unless othemise noted.) .Characteristic Peak Blocking Current(l) (VD = Rated VDRM, Gate Open) TJ = 25C TJ = 125C Peak On-State Voltage (ITM = 35 A Peak, Pulse Width <2 ms, Dutv Cycle < 2Y0) Symbol Min Typ Max IDRM -- -- -- -- 10 2 VTM -- 1.4 1.85 Gate Trigger Current (Continuous dc) (VD=12V, RL= 100Q) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) "A" SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (VD=12V, RL= 100Q) MT2(+), G(+); MT2(-), G(-); MT(+), G(-) MT2(-), G(+) "W SUFFIX ONLY (VD = Rated VDRM, TJ = 125C, RL = 10 k) MT(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) "A" SUFFIX ONLY VGT I Unit Id I mA volts -- -- -- -- 0.2 -1 Holding Current (VD = 12 V, ITM = 200 mA, Gate Open) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 rnA) 1.5 50 mA -- w + Ctitical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Tc = 125C) -- 40 Ctitical Rate of Hse of Commutation Voltage (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 Nms, Gate Unenergized, Tc = 80C) -- 5 ..! 1. Ratings apply for open gate conditions. Devices shall not be tested wik.~w~ant `~+~~, \ .>, apptied exceeds the rated blotting voltage. current source for blocking voltage such that the voltage 125 115 \ , \ 105 / 95 ,~.,? / 85 75 / o Figure 1. RMS Current Derating 2 ` \ 5 10 15 20 IT(RMS), RMSON-STATE CURRENT (AMPS) 25 Figure 2. On-State Power Dissipation Motorola Thyristor Device Data MAC223FP Series MAC223AFP Series TYPICAL CHARACTERISTICS , , 1 , ! t 1 I 1 I f I I I , I ! 1 1 , 1 t I , , , I I 1 0 I 4 t 1 I 1 I I [ I 3 1 . 1 0.5 +0 +0 -20 0 20 40 60 80 100 TJ, JUNCTIONTEMPERATURE ~C) 120 140 figure 3. Gate Trigger Current I--"i I I 1 1 I I I I 1 I I I I 1 I I I 1 I I I I I I I I g & 2 n u N i a x z o z 1 0.5 I I I I 1 1 1 1 0.3 0.2 0.1 %0 I I I I I I I =1 ~ 0.5 + m ~ 40 -20 0 20 40 ..,., 1 I # t ` .;\\.,\,., {..::i t :0 .- I I 1 r 1 # 1 1 1 fl 1 Ii .4 u. I t ; 1 I ! 1 1 I t [ I 1 1 1 I I f 11 t ,, II , , t II 11 I I 1 , t # 1 1 2 I 1 , , I 1 3 I f I t I 1 I , , t 4 ~M, INSTANTANEOUSON-STATEVOLTAGE~OLTS) Hgure 6. Typical On-State Characteristics 9 Motorola Thy fistor Device Data 3 MAC223FP Series MAC223AFP Series PACKAGE DIMENSIONS G 1$1 0.25(0.OIO)@/ B @lYl ~, ,, (.\\,l .\ ..,t&: `~;\i `.<. .,,,>, 4. Motorola resewes'~~~t to make changeswithout furthernotice to any products herein. Motorola makes no warranty,representation or guarantee regarding the suitability of~~wcts for any particular pu~ose, nor does Motorolaassume any fiabihtyarising out of the application or use of any product or circuit, and sWifiMll~t@Bcl?% any and all liatifiW, including without limitation consequential or incidental damages. `Typicar' parameters can and do vary in different applicaQo~:AIP~perating parameters, including `Typicals" must be vahdated for each customer apphcationby customer's technical experts. Motorola does not C* a~f?tinse under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in syst%~-d~ for surgical implant into the body, or other applications intended to support or sustain fife, or for any other application in which the failure of t~~~wla product muld create a situationwhere personal injury or death may occur. Should Buyer purchase or use Motorola products for any such uWMed or unauthorized application, Buyershall indemnify and hold Motorola and its officers, employees,subsidiaries,afiliates, and distributors harmless ag~st all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associatedwit uch unintended or unauthorized use, even if such claim alleges that Motorola was neghgentregarding the design or manufacture of the part. Motorola and 8A are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/AWrmativeAction Employer. Literature Distribution Centers: USA Motorola Uterature Distribution; P.O. Box 20912; Phoenix,Arizona 85036. EUROPE Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes,MK14 56P, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda,Shinagawa-ku,Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai Kfng Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. @ MOTOROLA o MAC223FP/D 111111111111111111111111111111 1111111111111