—
MOTOROU
SEMICONDUCTOR TECHNICAL DATA Order this document
by MAC223FP/D
aWiacs
Silicon Bidirectional Triode Thyristors
MAC223FP
Series
MAC223AFP
Series..:;,:,
*+,.,*$.$!
...designed primarily for full-wave ac control applications, such as lighting systems, ..\\,,,~’
...!,
,<* ,,J$*.>$,
heater controls, motor controls and power supplies; or wherever full-wave silicon-
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gatecontrolled devices are needed. iSOLAT@@i@h#s
TH~@~~~S
●Off-State Voltages to 800 Volts 25 W~ES RMS
●All Diffused and Glass Passivated Junctions for Parameter Uniformity and SWlity ~@@:k600 VOLTS
●Small, Rugged Thermowati Construction for Thermal Resistance and High Heat C*$,
.{,3’
Dissipation ~~@!
.,’.
.Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or
Four Modes (MAC223AFP Series) -f FZ
,{“ ‘$?’:+
.~&f”
o
STYLE 3I
..- -- ..-, ---- -y-l ., ‘‘$* ‘“
MAC223-4FP, MAC223A4FP 200
MA@23-#P, MAC223A6FP 400
Mh*3-8FP$ MAC223A8FP 600
+3+W2’%-I OFP,MAC223A1OFP 800
On-State RMS Current flc =+80°C) Full Cyclqi@~~’’~ve 50 to 60 Hz(2) IT(RMS) 25 Amps
,
Peak Nonrepetitive Surge Current (One Full %~:d Hz,Tc =80°C,
G?t?:,.:,<* lTSM 250 Amps
preceded and followed by rated curre~~$$~.
‘$,~w,
Grcuit Fusing (t =8.3 ms) J.:iit$.,, ~{
,*,,,t\,.>K*,>,,1,. 12t 260 A2s
PGM 20 Watts
PG(AV) 0.5 Watt
IGM 2Amps
Peak Gate Voltag~t@~,$2~) VGM *1ovolts
RMS lsolatioql~~&~A =25°C, Relative Humidity <20Y0)
., .,, V(lso) 1500 volts ‘
Operating~~o}~emperature TJ 40 to +125 “c
Stor~<%p&rature Range Tstg 40 to +150 “c
:.
W:&Q&korque —8in. lb,
l$~~~fi for all types can be applied on a continuous basis. BlocKng voltages shall not be tested with aconstant current source suchthat the
‘Q$t<0~a9e ratings of the devices are exceeded.
$$. Thecasetemperature reference point forallTC measurements isapoint onthe center leadofthe package as close aspossible to theplastic
body.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,Junction to Case RgJC 1.2 ‘CM
Thermal Resistance,Case to Sink ReCS 2.2 ‘cm
Thermal Resistance,Junction to Ambient RgJA 60 ‘cm
@MOTOROLA
@Motorola,Inc. 1995 ,
MAC223FP Series MAC223AFP Series
ELECTRICAL CHARACTERISTICS UC= 25°C and either polarity of MT2 to MT1 voltaae unless othemise noted.)
.- . .
Characteristic Symbol
IDRM
Min Typ Max IUnit
Peak Blocking Current(l) TJ =25°C
(VD=Rated VDRM, Gate Open) TJ =125°C
Peak On-State Voltage
(ITM =35 APeak, PulseWidth <2 ms, Dutv Cycle <2Y0)
10 Id
2mA
—
——
—
VTM 1.4 1.85 Ivolts
—
Gate Trigger Current (Continuous dc)
(VD=12V, RL= 100Q)
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-)
MT2(-), G(+)“A” SUFFIX ONLY
IGT
—
—
Gate Trigger Voltage (Continuous dc)
(VD=12V, RL= 100Q)
MT2(+), G(+); MT2(-), G(-); MT(+), G(-)
MT2(-), G(+)“W SUFFIX ONLY
(VD=Rated VDRM, TJ =125°C, RL =10 k)
MT(+), G(+); MT2(-), G(-); MT2(+), G(-)
MT2(-), G(+)“A” SUFFIX ONLY
VGT
—
—
0.2
–1
Holding Current
(VD =12 V, ITM=200 mA, Gate Open)
+
50 mA
—w
Gate Controlled Turn-On Time
(VD=Rated VDRM, ITM =35 APeak, IG=200 rnA)
Ctitical Rate of Riseof Off-State Voltage
(VD=Rated VDRM, Exponential Waveform, Tc =125°C)
1.5
40
—
—
Ctitical Rate of Hse of Commutation Voltage
(VD=Rated VDRM, ITM =35 APeak,Commutating
di/dt =12.6Nms, Gate Unenergized, Tc =80°C) ..!
5
1. Ratings apply for open gate conditions. Devicesshall not be tested wik.~w~ant current source for blocking voltage suchthat the voltage
apptied exceeds the rated blotting voltage. ‘~+~~,\
.>,
125
\ ,
115 \
105
95 ,~.,?
85
75
/
/‘
/
o510 15 20 25
IT(RMS),RMSON-STATECURRENT(AMPS)
Figure 2. On-State Power Dissipation
Figure 1. RMS Current Derating
2\Motorola Thyristor Device Data
MAC223FP Series MAC223AFP Series
TYPICAL CHARACTERISTICS
, , 1, , I!1,
I1
! t 1I[1
I1tI
1I f
3III
.
1
0.5
+0 +0 -20 0 20 40 60 80 100 120 140
TJ,JUNCTIONTEMPERATURE~C)
figure 3. Gate Trigger Current
I--”i1 1 I I I I 1Ig
III1III1, , , I
&t {..::i ;
‘.;\\.,\,.,
III I II I II I
#
21I10I4I..,., 1I1r1
1It1fl 1t1I1I
n
u
N
i
a
x
z
o
z
0.5 ItI I 1 1 11#1I
Ii 1
f
!11I t
11 [ I 11 1 I I
0.3
0.2
0.1
=1
~0.5 ,, , , ,
+t II I I f I
mII I I I
~.4 t11 1tI1
I I I I II I
%0 40 -20 0 20 40 u. II
:0 #1, t 1,1, I , t
1234
.- ~M, INSTANTANEOUSON-STATEVOLTAGE~OLTS)
Hgure 6. Typical On-State Characteristics
9
Motorola Thy fistor Device Data 3
MAC223FP Series MAC223AFP Series
PACKAGE DIMENSIONS
G
1$1 0.25(0.OIO)@/ B@lYl
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~,..,t&: .,,,>,
4.
Motorolaresewes’~~~t tomakechangeswithoutfurthernoticetoanyproductsherein. Motorolamakesnowarranty,representationorguaranteeregarding
the suitabilityof~~wcts foranyparticularpu~ose, nordoesMotorolaassumeanyfiabihtyarisingoutofthe applicationoruseof anyproductorcircuit,and
sWifiMll~t@Bcl?% any andall liatifiW, includingwithout limitation consequentialor incidental damages. ‘Typicar’ parameterscan and do varyin different
applicaQo~:AIP~perating parameters,including‘Typicals”mustbevahdatedfor eachcustomerapphcationby customer’stechnical experts. Motoroladoes
notC* a~f?tinse underitspatent rightsnorthe rightsof others. Motorolaproductsare notdesigned,intended, or authorizedfor useas componentsin
syst%~-d~ forsurgical implant intothe body,orotherapplications intendedtosupportor sustainfife,or for any otherapplication inwhichthe failure of
t~~~wla product muld createasituationwhere personal injury or death mayoccur. Should Buyer purchase or use Motorola products for any such
uWMed orunauthorizedapplication,Buyershall indemnifyand holdMotorolaand itsofficers,employees,subsidiaries,afiliates, anddistributorsharmless
ag~st all claims, costs, damages, and expenses,and reasonable attorney feesarising out of, directly or indirectly,any claim of personal injury or death
8
associatedwit uchunintendedor unauthorizeduse,evenifsuchclaimallegesthat Motorolawas neghgentregardingthe design or manufactureofthe part.
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@MOTOROLA oMAC223FP/D
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