1N3289A(R) thru 1N3294A(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =100 A Features * High Surge Capability * Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 2 1 1 2 1 1 Maximum ratings, at Tj = 25 C, unless otherwise specified ("R" devices have leads reversed) Conditions 1N3289A(R) 1N3291A(R) 1N3293A(R) 1N3294A(R) Parameter Symbol Unit Repetitive p p peak reverse voltage g VRRM 200 400 600 800 V DC blocking voltage VDC 200 400 600 800 V 100 A Continuous forward current IF TC 130 C 100 100 100 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 2300 2300 2300 2300 A I2t for fusing Operating temperature Storage temperature I2 t Tj Tstg 60 Hz Half wave 22000 -40 to 200 -40 to 200 22000 -40 to 200 -40 to 200 22000 -40 to 200 -40 to 200 22000 -40 to 200 -40 to 200 A2sec C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions 1N3289A(R) 1N3291A(R) 1N3293A(R) 1N3294A(R) Unit Diode forward voltage VF IF = 100 A, Tj = 130 C 1.5 1.5 1.5 1.5 V Reverse current IR VR = VRRM, Tj = 130 C 24 24 17 13 mA 0.40 0.40 0.40 0.40 C/W Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJC 1 1N3289A(R) thru 1N3294A(R) www.genesicsemi.com 2 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: 1N3289A 1N3289AR 1N3291A 1N3291AR 1N3293A 1N3293AR 1N3294A 1N3294AR