TIP145/TIP146/TIP147 PNP Epitaxial Silicon Darlington Transistor * * * * Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) Industrial Use Complement to TIP140/141/142 Equivalent Circuit C B TO-3P 1 R1 1.Base 2.Collector 3.Emitter R1 @ 8kW R2 @ 0.12kW Absolute Maximum Ratings* Symbol VCBO VCEO R2 E T a = 25C unless otherwise noted Collector-Base Voltage Parameter : TIP145 : TIP146 : TIP147 Collector-Emitter Voltage : TIP145 : TIP146 : TIP147 Ratings - 60 - 80 - 100 Units V V V - 60 - 80 - 100 V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) - 10 A ICP Collector Current (Pulse) - 15 A IB Base Current (DC) - 0.5 A PC Collector Dissipation (TC=25C) 125 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. (c) 2007 Fairchild Semiconductor Corporation TIP145/TIP146/TIP147 Rev. 1.0.0 www.fairchildsemi.com 1 TIP145/TIP146/TIP147 -- PNP Epitaxial Silicon Darlington Transistor October 2008 Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP145 : TIP146 : TIP147 Test Condition ICEO Collector Cut-off Curren ICBO Collector Cut-off Current IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 hFE DC Current Gain VCE = - 4V,IC = - 5A VCE = - 4V, IC = - 10A VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) VBE(on) IC = - 30mA, IB = 0 Min. Typ. Max. - 60 - 80 - 100 Units V V V : TIP145 : TIP146 : TIP147 VCE = - 30V, IB = 0 VCE = - 40V, IB = 0 VCE = - 50V, IB = 0 -2 -2 -2 mA mA mA : TIP145 : TIP146 : TIP147 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 -1 -1 -1 mA mA mA -2 mA IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA -2 -3 V V Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V Base-Emitter On Voltage VCE = - 4V, IC = - 10A -3 tD Delay Time tR Rise Time tSTG Storage Time VCC = - 30V, IC = - 5A IB1= -20mA, IB2 = 20mA RL = 6W tF Fall Time 1000 500 V 0.15 ms 0.55 ms 2.5 ms 2.5 ms * Pulse Test: Pulse Width300ms, Duty Cycle2% (c) 2007 Fairchild Semiconductor Corporation TIP145/TIP146/TIP147 Rev. 1.0.0 www.fairchildsemi.com 2 TIP145/TIP146/TIP147 -- PNP Epitaxial Silicon Darlington Transistor Electrical Characteristics* Ta=25C unless otherwise noted -10 100000 VCE = -4V -8 -7 IB = -2000mA -6 IB = -1800mA IB = -1600mA IB = -1400mA IB = -1200mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -9 IB = -1000mA -5 IB = -800mA -4 -3 IB = -600mA -2 1000 IB = -400mA -1 -0 10000 -0 -1 -2 -3 -4 100 -0.1 -5 -1 VCE[V], COLLECTOR-EMITTER VOLTAGE -100 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 Figure 2. DC current Gain -1000 -10 I C=-500I B f=0.1MHz Cob[pF], CAPACITANCE VBE (sat) -1 VCE(sat) -0.1 -0.01 -0.1 -1 -10 -100 -10 -100 -1 -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 150 -100 PC[W], POWER DISSIPATION -10 D C IC[A], COLLECTOR CURRENT 125 -1 TIP140 TIP141 TIP142 -0.1 -1 -10 -100 75 50 25 0 -1000 0 25 50 75 100 125 150 175 o VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c) 2007 Fairchild Semiconductor Corporation TIP145/TIP146/TIP147 Rev. 1.0.0 100 www.fairchildsemi.com 3 TIP145/TIP146/TIP147 -- PNP Epitaxial Silicon Darlington Transistor Typical Characteristics TIP145/TIP146/TIP147 -- PNP Epitaxial Silicon Darlington Transistor Package Dimension (TO-3P) 5.00 4.60 15.80 15.40 1.65 1.45 5.20 4.80 (R0.50) 20.10 19.70 18.90 18.50 3.70 3.30 (1.85) 2.20 1.80 2.60 2.20 20.30 19.70 3.20 2.80 0.55 1.20 0.80 1 3 5.45 0.75 0.55 5.45 (R0.50) NOTES: A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONING AND TOLERANCING PER ASME14.5 1973. D) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. E) DRAWING FILE NAME: TO3P03AREV2. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 (c) 2008 Fairchild Semiconductor Corporation TIP145/TIP146/TIP147 Rev. A1 www.fairchildsemi.com 5 TIP145/TIP146/TIP147 PNP Epitaxial Silicon Darlington Transistor TRADEMARKS