TIP145/TIP146/TIP147 — PNP Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145/TIP146/TIP147 Rev. 1.0.0 1
October 2008
TIP145/TIP146/TIP147
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.)
Industrial Use
Complement to TIP140/141/142
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage : TIP145
: TIP146
: TIP147
- 60
- 80
- 100
V
V
V
VCEO
Collector-Emitter Voltage : TIP145
: TIP146
: TIP147
- 60
- 80
- 100
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 10 A
ICP Collector Current (Pulse) - 15 A
IB Base Current (DC) - 0.5 A
PC Collector Dissipation (TC=25°C) 125 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
TO-3P
1
1.Base 2.Collector 3.Emitter
Equivalent Circuit
B
E
C
R1 R2
R1 8k W@
R 2 0.12 kW@
TIP145/TIP146/TIP147 — PNP Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145/TIP146/TIP147 Rev. 1.0.0 2
Electrical Characteristics* Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP145
: TIP146
: TIP147
IC = - 30mA, IB = 0 - 60
- 80
- 100
V
V
V
ICEO Collector Cut-off Curren
: TIP145
: TIP146
: TIP147
VCE = - 30V, IB = 0
VCE = - 40V, IB = 0
VCE = - 50V, IB = 0
- 2
- 2
- 2
mA
mA
mA
ICBO Collector Cut-off Current
: TIP145
: TIP146
: TIP147
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
- 1
- 1
- 1
mA
mA
mA
IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 - 2 mA
hFE DC Current Gain VCE = - 4V,IC = - 5A
VCE = - 4V, IC = - 10A
1000
500
VCE(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA
IC = - 10A, IB = - 40mA
- 2
- 3
V
V
VBE(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V
VBE(on) Base-Emitter On Voltage VCE = - 4V, IC = - 10A - 3 V
tD Delay Time VCC = - 30V, IC = - 5A
IB1= -20mA, IB2 = 20mA
RL = 6W
0.15 ms
tR Rise Time 0.55 ms
tSTG Storage Time 2.5 ms
tF Fall Time 2.5 ms
TIP145/TIP146/TIP147 — PNP Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145/TIP146/TIP147 Rev. 1.0.0 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -2 -3 -4 -5
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
IB = -2000mA
IB = -1800mA
IB = -1600mA
IB = -1400mA
IB = -1200mA
IB = -1000mA
IB = -800mA
IB = -600mA
IB = -400mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100
100
1000
10000
100000
VCE = -4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
IC=-500IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1 -10 -100 -1000
-10
-100
-1000
f=0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Cob[pF], CAPACITANCE
-1 -10 -100 -1000
-0.1
-1
-10
-100
TIP141
TIP142
TIP140
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
25
50
75
100
125
150
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP145/TIP146/TIP147 — PNP Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145/TIP146/TIP147 Rev. 1.0.0 4
Package Dimension (TO-3P)
NOTES:
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONING AND TOLERANCING PER
ASME14.5 1973.
D) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
E) DRAWING FILE NAME: TO3P03AREV2.
15.80
15.40
5.20
4.80
20.10
19.70
3.70
3.30
20.30
19.70
1.65
1.45
5.00
4.60
5.45 5.45
1.20
0.80
2.20
1.80
3.20
2.80
0.75
0.55
2.60
2.20
1 3
18.90
18.50
(1.85)
(R0.50)
(R0.50)
0.55
TIP145/TIP146/TIP147 PNP Epitaxial Silicon Darlington TransistorTIP145/TIP146/TIP147
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145/TIP146/TIP147 Rev. A1 5
Rev. I31
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