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Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
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IF/RF MICROWAVE COMPONENTS
Page 1
Ultra High IP3 Amplier Module
The Big Deal
• IndustryleadingHighIP3,47dBmtyp.
• Integratedoptimizationcircuits
• Linearitywithlowcurrentconsumption
Product Overview
TheHXG-122+(RoHScompliant)isanadvancedampliermodulecombininghighdynamicrangeMMIC
technologyandoptimizationcircuitstoprovideindustryleadinglinearityoverafocusedfrequencyrange.It
ispackagedinaMini-CircuitsSysteminPackage(MSiP)module(6.4mmx7.0mmx2.4mm)usingasealed
ceramiccoverandhavinggoldoverNiforexcellentsolderability.
Feature Advantages
OptimizedFrequencyRange:
500to1200MHz
Coveringprimarywirelesscommunicationsbands:
LTE,cellularandGSM
ExtremelyHighIP3:
47dBmtypat700MHzversusDC
PowerConsumptionof146mA
TheHXG-122+offersindustryleadingIP3performancerelativetodevicesizeandpower
consumption.ThecombinationofthedesignandE-PHEMTprovidesenhancedlinearity
overabroadfrequencyrangeasevidenceintheIP3.Thisfeaturemakesthisamplier
idealforusein:
•Driverampliersforcomplexwaveformupconverterpaths
•Driversinlinearizedtransmitsystems
•SecondaryampliersinultraHighDynamicrangereceivers
NoExternalMatchingComponents
Required
Unlikecompetingproducts,Mini-CircuitsHXG-122+providesInputandOutputReturnLoss
of10dBupto0.9GHzwithouttheneedforanyexternalmatchingcomponents
LowNoiseFigure:2.2dBtyp.
AuniquefeatureoftheHXG-122+whichseparatesthisdesignfromallcompetitorsisthe
lownoisegureperformanceincombinationwiththehighdynamicrange.
Key Features
CeramicPackage
HXG-122+
50Ω 0.5 to 1.2 GHz
™
Mini-Circuits System In Package
☛ LTE Performance