sizes down to 20 mil square and in capacitances up to 1000 pF. These chips are manufactured using state-of-the-art thin-film techniques, are 100% electrically tested and visually inspected to MIL-STD-883. * Small size, 20 to 60 mil square * Quick delivery The NC series of thin-film capacitors has the advantage of increased performance and smaller size when compared with its thick-film counterparts. These chips are available in + Gapacitance range: 1 pF to 1000 pF + Reduced hybrid size Dielectric: silicon dioxide/silicon nitride Substrate: silicon with gold backing NGA 20 mil sq. NCB 30 mil sq. NOG 40 mil sq. CAP DC WORKING CAP DC WORKING CAP DC WORKING VALUE VOLTAGE VALUE VOLTAGE VALUE VOLTAGE MNOS MOS MNOS MOS MNOS MOS 40 - 100pF 55 - 220pF 50 45 7 1 4 60 - 200 56 so 55 - 82 65 - 180 60 60 66 7 4 65 75 35 68 70 - eo 39 7 38 9044 0 95 48 62 90 42 45 105 54 170 60 56 4 9s 47 49 136 68 a 54. tio (73 51 105 52 :, 10 85 47 4 120 56 160 93 66 180 102 =43 4 130 62 200 114 72 200 160 39 4 135 68 al 200-193 200 200-36 14074 88 200 200 = 33pF 150 81 oF iB 20.5pF ce OY LON! INO IN: NCD 55 mil sq. NCE 60 mil sq. CAP DC WORKING VALUE VOLTAGE MNOS MOS 1000pF 2m - 4 ao7 25 - 820 5 30 - 750 4 3 - 680 4 35 - 620 4 40 - 560 + 40 - sio 4 50 - _| 470 + 50 20 430 7 60 25 390 4 65 28 360 4 75 30 30 7 30 34 300 5 90 38 270 4 100 40 240 + 100 47 220 5 110 52 200 7 120 57 180 + 135 63 160 140 70 1500F 140 76 NCE NCD Chip size See Capacitance Data, +3 mil (0.05 mm) Chip thickness 8 +3 mil (0.203 0.08 mm) Chip substrate material Silicon Dielectric, MNOS Silicon dioxide/silicon nitride MOS Silicon dioxide Bonding pad 5.x 5 milmin., 10kA aluminum Backing 3kA min. gold OPTION: Gold bonding pads 15kA min. Hectro-Films, Inc. reserves the right to change specifications without notice Peak voltage at +25C Dissipation factor, 1 kHz, 1 Vrms, +25C Q at 1mHz, 50 Vrms, +25C TOG, -55C to +150C Insulation resistance at working voltage, +25C Operating temperature range Thermal shock Moisture resistance, MIL-STD-202, Method 106 Short time overload, +25C, 5 seconds High temperature exposure Life, MIL-STD-202, Method 108, Condition D, +125C ambient 1.5 x working voltage 0.05% MNOS 0.1% MOS 1000 MIN. +45 25 pom/G 109 min. -55CG to 4+125C CIC +(0.25% + 0.25 pF) max. CIC +(1.0% + 0.25 pF) max. 1.5 x working voltage 100 hr. at +150C ambient, GIG +(0.25% + 0.25 pF) max. 1000 hr. at working voltage, CIG (2.0% + 0.25 pF) max. The NC series of capacitor chips are designed for assembly in hybrid circuits using conventional wire-bonding techniques. They provide excellent stability and performance, and their small size gives the hybrid designer greater layout flexibility. They are available as MNOS or MOS capacitors. The MOS version is to be preferred when low dielectric absorption is required. Example: 100% visualled, Rt = 500 , 10%, t50pom TCR P/N: W NCC = 00O = 1000 A J Product Family J Multiplier at LL C 0.001 Process Code B 0.01 Tolerance Code: -000-MNOS A O41 H 25% -017-MOS 0 { J 5%, Value: Use the first four significant digits y soe of the Resistance L 25%, N 50% Inspection/Packaging D 105% Use - W for 100% visually inspected parts X for sample, visually inspected loaded in matrix trays (4% AQL) Hectro-Films, Inc. reserves the right to change specifications without noti ce Ele: iB os ee te