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ATF-13786
Surface Mount Gallium
Arsenide FET for Oscillators
Technical Data
85 mil Plastic Surface
Mount Package
Features
• Low Cost Surface Mount
Plastic Package
• High fMAX: 60 GHz Typical
• Low Phase Noise at 10 GHz:
-110 dBc/Hz @ 100 kHz Typical
• Output Power at 10 GHz:
up to 10 dBm
• Tape-and-Reel Packaging
Option Available
Description
Hewlett-Packard’s ATF-13786 is a
low cost Gallium Arsenide
Schottky barrier-gate field effect
transistor housed in a surface
mount plastic package. This
device is designed for use in low
cost, surface mount oscillators
operating over the RF and
microwave frequency ranges. The
ATF-13786 has sufficient gain for
easy use as a negative R cell,
without excess gain that can lead
to unwanted oscillations and
mode jumping. The gate structure
used in the fabrication of this
device results in phase noise
performance superior to that of
most other MESFETs. These
features make this device
particularly well suited for low
power (< +10 dBm) commercial
oscillator applications such as are
encountered in DBS, TVRO, and
MMDS television receivers, or
hand-held transceivers operating
in the 900 MHz, 2.4 GHz, and
5.7␣ GHz ISM bands.
Insertion Power Gain, Maximum
Available Gain, and Maximum Stable
Gain vs. Frequency.
VDS = 3 V, IDS = 40 mA.
Pin Configuration
51020
1
5
10
15
20
FREQUENCY (GHz)
GAIN (dB)
S
21
25
MSG
MSG
0
MAG
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
1
4
3
2 SOURCE
SOURCE
DRAINGATE
137
5965-8721E
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ATF-13786 Electrical Specifications, TC = 25°C, VDS = 3 V, IDS = 40 mA[4]
(unless noted)
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S21|2Insertion Power Gain f = 10 GHz dB 6.0
P1 dB Power at 1 dB Gain Compression f = 10 GHz dBm 15 16.5
G1 dB 1 dB Compressed Gain f = 10 GHz dB 6.5 7.5
PN Phase Noise (100 kHz offset)[5] f = 10 GHz dBc/Hz -110
gmTransconductance V
DS = 3 V, VGS = 0 V mS 25 55
IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V mA 50 70 100
VPPinchoff Voltage VDS = 3 V, IDS = 1 mA V -2.0 -1.5 -0.5
VBDG Gate - Drain Breakdown Voltage IDG = 0.1 mA V 6.5 7
Notes:
4. Recommended maximum bias conditions for use as an oscillator.
5. The superior phase noise of this product results from the use of a gate structure optimized for noise performance.
Typical performance of 10 GHz parallel resonated, lightly coupled oscillator using high Q dielectric resonator.
ATF-13786 Absolute Maximum Ratings
Symbol Parameter Units Absolute Maximum[1]
VDS Drain-Source Voltage V 4
VGS Gate-Source Voltage V -4
VGD Gate-Drain Voltage V -6
IDS Drain Current mA IDSS
PTPower Dissipation[2,3] mW 225
TCH Channel Temperature °C 150
TSTG Storage Temperature °C -65 to +150
Notes:
1. Operation of this device above
any one of these conditions
may cause permanent damage.
2. TCASE = 25oC (TCASE is defined
to be the temperature at the
ends of pins 2 and 4 where
they contact the circuit
board).
3. Derate at 3.1 mW/oC for
TC␣ >␣ 60 oC.
Thermal Resistance[2]: θjc = 325°C/W
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Typical Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 3 V, IDS = 40 mA
S11 S21 S12 S22
Frequency
GHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.
1 0.97 -23 4.80 157 0.03 77 0.46 -13
2 0.88 -46 4.60 135 0.06 66 0.42 -25
3 0.78 -68 4.35 117 0.08 58 0.36 -35
4 0.67 -95 4.02 95 0.11 47 0.28 -48
5 0.57 -125 3.61 75 0.12 37 0.19 -65
6 0.52 -157 3.20 57 0.13 28 0.12 -93
7 0.53 176 2.84 41 0.14 21 0.08 -147
8 0.57 160 2.54 31 0.14 18 0.10 171
9 0.60 143 2.27 16 0.14 12 0.15 148
10 0.63 130 2.04 4 0.15 6 0.19 134
11 0.64 117 1.82 -9 0.14 0 0.25 122
12 0.67 107 1.65 -19 0.14 -4 0.30 113
13 0.72 99 1.55 -29 0.14 -8 0.35 109
14 0.76 97 1.47 -35 0.14 -9 0.39 111
15 0.78 90 1.40 -46 0.14 -14 0.41 108
16 0.77 83 1.32 -58 0.14 -20 0.42 104
17 0.74 77 1.26 -68 0.14 -28 0.43 98
18 0.73 69 1.23 -80 0.14 -36 0.42 93
Part Number Ordering Information
Part Number Devices per Reel Reel Size
ATF-13786-TR1 1000 7''
ATF-13786-STR 10 strip
Please refer to the “Tape-and-Reel Packaging for Surface Mount
Semiconductors” data sheet for more detailed information.
85 mil Plastic Surface Mount
Package Dimensions
4
0.51 ± 0.13
(0.020 ± 0.005)
2.34 ± 0.38
(0.092 ± 0.015)
2.67 ± 0.38
(0.105 ± 0.15)
13
2
2.16 ± 0.13
(0.085 ± 0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
1.52 ± 0.25
(0.060 ± 0.010)
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
0.30 MIN
(0.012 MIN)
C
L
45°
5° TYP.
8° MAX
0° MIN
137
