Surface Mount Gallium Arsenide FET for Oscillators Technical Data ATF-13786 Description * Low Cost Surface Mount Plastic Package * High fMAX: 60 GHz Typical * Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz Typical * Output Power at 10 GHz: up to 10 dBm * Tape-and-Reel Packaging Option Available Hewlett-Packard's ATF-13786 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This device is designed for use in low cost, surface mount oscillators operating over the RF and microwave frequency ranges. The ATF-13786 has sufficient gain for easy use as a negative R cell, without excess gain that can lead to unwanted oscillations and mode jumping. The gate structure used in the fabrication of this device results in phase noise performance superior to that of most other MESFETs. These features make this device particularly well suited for low power (< +10 dBm) commercial oscillator applications such as are encountered in DBS, TVRO, and MMDS television receivers, or hand-held transceivers operating in the 900 MHz, 2.4 GHz, and 5.7 GHz ISM bands. 25 GAIN (dB) 20 MSG 15 MAG S 21 10 MSG 5 0 1 5 10 FREQUENCY (GHz) Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 40 mA. 20 5-43 85 mil Plastic Surface Mount Package Pin Configuration 4 GATE SOURCE DRAIN 137 Features 3 1 2 SOURCE This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 5965-8721E ATF-13786 Absolute Maximum Ratings Symbol Parameter Units Absolute Maximum[1] VDS VGS Drain-Source Voltage Gate-Source Voltage V V 4 -4 VGD IDS PT TCH TSTG Gate-Drain Voltage Drain Current Power Dissipation[2,3] Channel Temperature Storage Temperature V mA mW C C -6 Thermal Resistance[2]: IDSS 225 150 -65 to +150 Notes: 1. Operation of this device above any one of these conditions may cause permanent damage. 2. TCASE = 25oC (TCASE is defined to be the temperature at the ends of pins 2 and 4 where they contact the circuit board). 3. Derate at 3.1 mW/oC for TC > 60 oC. jc = 325C/W ATF-13786 Electrical Specifications, TC = 25C, VDS = 3 V, IDS = 40 mA[4] (unless noted) Symbol Parameters and Test Conditions Units Min. Typ. Max. |S21|2 Insertion Power Gain f = 10 GHz dB P1 dB Power at 1 dB Gain Compression f = 10 GHz dBm 15 16.5 G1 dB 1 dB Compressed Gain f = 10 GHz dB 6.5 7.5 PN Phase Noise (100 kHz offset)[5] f = 10 GHz dBc/Hz gm Transconductance VDS = 3 V, VGS = 0 V mS 25 55 IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V mA 50 70 100 VDS = 3 V, IDS = 1 mA V -2.0 -1.5 -0.5 IDG = 0.1 mA V 6.5 7 VP VBDG Pinchoff Voltage Gate - Drain Breakdown Voltage 6.0 -110 Notes: 4. Recommended maximum bias conditions for use as an oscillator. 5. The superior phase noise of this product results from the use of a gate structure optimized for noise performance. Typical performance of 10 GHz parallel resonated, lightly coupled oscillator using high Q dielectric resonator. 5-44 Typical Scattering Parameters, Common Source, Z O = 50 , VDS = 3 V, IDS = 40 mA S21 S11 S12 S22 Frequency GHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.97 0.88 0.78 0.67 0.57 0.52 0.53 0.57 0.60 0.63 0.64 0.67 0.72 0.76 0.78 0.77 0.74 0.73 -23 -46 -68 -95 -125 -157 176 160 143 130 117 107 99 97 90 83 77 69 4.80 4.60 4.35 4.02 3.61 3.20 2.84 2.54 2.27 2.04 1.82 1.65 1.55 1.47 1.40 1.32 1.26 1.23 157 135 117 95 75 57 41 31 16 4 -9 -19 -29 -35 -46 -58 -68 -80 0.03 0.06 0.08 0.11 0.12 0.13 0.14 0.14 0.14 0.15 0.14 0.14 0.14 0.14 0.14 0.14 0.14 0.14 77 66 58 47 37 28 21 18 12 6 0 -4 -8 -9 -14 -20 -28 -36 0.46 0.42 0.36 0.28 0.19 0.12 0.08 0.10 0.15 0.19 0.25 0.30 0.35 0.39 0.41 0.42 0.43 0.42 -13 -25 -35 -48 -65 -93 -147 171 148 134 122 113 109 111 108 104 98 93 85 mil Plastic Surface Mount Package Dimensions Part Number Ordering Information 0.51 0.13 (0.020 0.005) 4 Part Number Devices per Reel Reel Size ATF-13786-TR1 ATF-13786-STR 1000 10 7'' strip 45 1 137 Please refer to the "Tape-and-Reel Packaging for Surface Mount Semiconductors" data sheet for more detailed information. C L 3 2.34 0.38 (0.092 0.015) 2 1.52 0.25 (0.060 0.010) 2.67 0.38 (0.105 0.15) 5 TYP. 0.66 0.013 (0.026 0.005) 0.203 0.051 (0.006 0.002) 8 MAX 0 MIN 2.16 0.13 (0.085 0.005) 0.30 MIN (0.012 MIN) DIMENSIONS ARE IN MILLIMETERS (INCHES) 5-45