SK12B - SK115B 1 Amp. Surface Mount Schottky Barrier Rectifiers CASE: SMB/DO-214AA Pb Current 1.0 A Voltage 20 V to 150 V For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability. low VF High surge current capability Plastic material used carriers Underwraiters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260 C / 10 seconds at terminals MECHANICAL DATA XX = Marking code WW = Week code Y = Year code Dimensions in mm. Case: Molded plastic Terminals: Pure tin plated, lead free Polarity: Indicated by cathode band Packaging: 16 mm tape EIA-STD RS-481. Weight: 0.093 g. Maximum Ratings and Electrical Characteristics at 25 C Marking code SK 12B I1 SK 13B I2 SK 14B I3 SK 15B I4 SK 16B I5 SK 19B I6 SK SK 110B 115B I7 I8 VRRM Maximum Recurrent Peak Reverse Voltage (V) 20 30 40 50 60 90 100 150 VRMS Maximum RMS Voltage (V) 14 21 28 35 42 63 70 105 VDC Maximum DC Blocking Voltage (V) 20 30 40 50 60 90 100 150 IF(AV) Maximum Average Forward Rectified Current at TL (See graphic) IFSM 1.0 A 8.3 ms.Peak Forward Surge Current 30 A (Jedec Method) Tj Operating Temperature Range Tstg Storage Temperature Range -55C to +125C -55C to +150C -55C to +150C Electrical Characteristics at Tamb = 25 C VF Maximum Instantaneous Forward Voltage @ 1.0 A Maximum DC Reverse Current (Note 1) TA = 25 C IR at Rated DC Blocking Voltage TA =100C TA =125C 0.5 V 0.75 V 0.5 mA 10 mA 5.0 mA (Note 2) 110 pF Rthj-l Typical Thermal Resistance (Note 3) 25 C/W 3. Measured on P.C. Board with 10mm x10mm Copper Pad Areas -2.0 mA -- Typical Junction Capacitance 1. Pulse Test With PW = 300 sec, 1% Duty Cycle 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 0.95 V 0.1 mA Cj NOTES: 0.85 V Mar - 11 SK12B - SK115B Rating And Characteristic Curves MAXIMUM FORWARD CURRENT DERATING CURVE 10 1.4 VF, forward voltage (V) 1.6 P.C.B. MOUNTED ON 10 x 10 mm COPPER PAD AREAS 0 50 60 70 80 90 100 110 120 130 140 150 160 Lead temperature (C) IFSM, peak forward surge current (A) MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT AT RATED TL 8.3 ms Single Half Sine Wave JEDEC Method 40 30 20 10 0 1 10 Number of cycles at 60 Hz TYPICAL JUNCTION CAPACITANCE Cj, junction capacitance (pF) 50 5B 1.2 11 1.0 SK 0.8 B- 0.6 15 0.4 SK 0.2 4B 0 0.5 K1 0.01 SK12B-SK14B SK15B & SK16B SK110B & SK115B RESISTIVE OR INDUCTIVE LOAD -S 0.1 1 12B PULSE WIDTH = 300 s 1% DUTY CYCLE 1 IF(AV), average forward Current (A) 50 SK IF, instantaneous forward current (A) TYPICAL FORWARD CHARACTERISTIC 100 400 Tj = 25 C f = 1.0 MHz Vsig = 50mVp-p 100 10 0.1 1 10 100 VR, reverse voltage (V) TYPICAL REVERSE CHARACTERISTIC SK12B-SK14B SK15B & SK16B SK110B & SK115B TYPICAL TRANSIENT THERMAL CHARACTERISTIC 10 Tj = 125 C 1 0.1 Tj = 75 C 0.01 0.001 Transient thermal impedance (C/W) IR, Instantaneous reverse current (mA) 100 Tj = 25 C 0 20 40 60 80 100 120 140 Percent of rated peak reverse voltage (%) 100 10 1 0.1 0.01 0.1 1 10 T, Pulse duration (sec) 100 Mar - 11