2SK4087LS
No. A0555-1/5
Features
•Low ON-resistance, low input capacitance, ultrahigh-speed switching.
•High reliability (Adoption of HVP process).
•Attachment workability is good by Mica-less package.
•Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 600 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) IDc*1 Limited only by maximum temperature 14 A
IDpack*2 SANYO’s ideal heat dissipation condition 9.2 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 52 A
Allowable Power Dissipation PD2.0 W
Tc=25°C (SANYO’s ideal heat dissipation condition) 40 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *3 EAS 117 mJ
Avalanche Current *4 IAV 14 A
*1 Shows chip capability
*2 Package limited
*3 VDD=99V, L=1mH, IAV=14A
*4 L≤1mH, single pulse
Marking : K4087
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0555A
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
40407QB TI IM TC-00000630 / 22107QB TI IM TC-00000371
SANYO Semiconductors
DATA SHEET
2SK4087LS N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK4087LS
No. A0555-2/5
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 600 V
Zero-Gate Voltage Drain Current IDSS VDS=480V, VGS=0V 100 µA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 5 V
Forward T ransfer Admittance yfsVDS=10V, ID=7A 4 8 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=7A, VGS=10V 0.47 0.61 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 1200 pF
Output Capacitance Coss VDS=30V, f=1MHz 220 pF
Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 50 pF
Turn-ON Delay T ime td(on) See specified Test Circuit. 27 ns
Rise T ime trSee specified Test Circuit. 72 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 144 ns
Fall T ime tfSee specified Test Circuit. 48 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=14A 46 nC
Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=14A 8.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=14A 26.4 nC
Diode Forward Voltage VSD IS=14A, VGS=0V 0.95 1.3 V
Package Dimensions
unit : mm (typ)
7509-002
Switching Time Test Circuit Avalanche Resistance Test Circuit
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5 2.8
123
10.0 3.2
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
PW=10µs
D.C.≤0.5%
P.G RGS=50Ω
G
S
D
ID=7A
RL=28.6Ω
VDD=200V
VOUT
2SK4087LS
VIN
10V
0V
VIN
50Ω
≥50Ω
RG
VDD
L
10V
0V
2SK4087LS
2SK4087LS
No. A0555-3/5
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Case Temperature, Tc -- °C
Drain Current, ID -- A
Forward T ransfer Admittance,
y
fs -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
ID -- VDS ID -- VGS
RDS(on) -- VGS RDS(on) -- Tc
IS -- VSD
y
fs -- ID
Drain Current, ID -- A
Switching Time, SW Time -- ns
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
IT11753 IT11754
IT11755 IT11756
--50 --25 0 25 50 75 100 125 150
0
0
30
35
25
20
15
10 3052515 20
10
5
0
40
30
35
25
20
15
10
5
020181641221068 14
15V
0
1.4
0.4
1.0
0.6
0.2
1.2
0.8
Tc=25°CVDS=20V
VGS=5V
6V
IT11758
0.2 0.4 0.6 0.8 1.41.21.0
0.01
0.1
10
7
5
3
2
5
3
2
7
5
3
2
2
1.0
7
5
3
IT11757
25°C
--25
°
C
Tc=75°C
0.1 23 57 23
1.0 23 5 5710
1.0
10
2
3
5
7
5
7
3
2
3VDS=10V
Tc=
--
25
°
C
75
°
C
VGS=0V
Tc= --25°C
25°C
75°C
3
0
2.0
1.8
1.0
1.4
151359711
0.6
0.2
1.2
1.6
0.8
0.4
ID=7A
Tc=75°C
25°C
--25°C
ID=7A, VGS=
10
V
SW Time -- ID
IT11759
10
100
3
2
2
5
7
1000
3
5
7
0.1 1.0
23 5 23 572 10
357
VDD=200V
VGS=10V
td(off)
tr
tf
td(on)
0
7
100
10
1000
5
3
2
7
5
3
2
10000
7
5
3
2
5052535451510 30 4020
IT11760
f=1MHz
Ciss
Coss
Crss
8V
25°C
10V
2SK4087LS
No. A0555-4/5
PW<10µs
Operation in this area
is limited by RDS(on).
10µs
100µs
1ms
10ms
IDP=52A
DC operation
100ms
IDc(*1)=14A
IDpack(*2)=9.2A
IT11730
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
A S O
VGS -- Qg
PD -- Ta PD -- Tc
0
025 50 75 100 125 150
100
80
60
20
40
120
175
EAS -- Ta
Avalanche Energy derating factor -- %
IT10478
Ambient Temperature, Ta -- °C
2
3
5
7
2
0.1
3
5
7
2
1.0
3
5
7
2
10
3
5
7
2
100
0.01 23 57 2
0.1 1.0 357 2
10 IT11762IT11761
0
020 40
5
10
60
20
15
80 100 120
25
35
30
40
45
140 160
IT11742IT11730
0
020 40
1.0
0.5
60
2.0
1.5
80 100 120
2.5
140 160
Tc=25°C
Single pulse
0
0
1
2
3
4
5
6
7
8
5040
10
9
10 20 30
VDS=200V
ID=14A
357 2
100 357
1k
*1. Shows chip capability
*2.
SANYO’s ideal heat dissipation condition
2SK4087LS
No. A0555-5/5
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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Note on usage : Since the 2SK4087LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of April, 2007. Specifications and information herein are subject
to change without notice.
